Multinary Alloys Based on IV-VI and IV-VI2 Semiconductors
Multinary Alloys Based on IV-VI and IV-VI2 Semiconductors

Author: Vasyl Tomashyk

Publisher: CRC Press

Published: 2024-08-21

Total Pages: 630

ISBN-13: 1040101356

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IV-VI and IV-VI2 semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as infrared lasers and detectors. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about the phase relations in multinary systems based on IV-VI and IV-VI2 semiconductors, providing the first systematic account of phase equilibria in multinary systems based on IV-VI and IV-VI2 semiconductors and making research originally published in Ukrainian and Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to researchers of phase equilibria, inorganic chemists, and solid state physicists. Key Features: Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases

Quaternary Alloys Based on IV-VI and IV-VI2 Semiconductors
Quaternary Alloys Based on IV-VI and IV-VI2 Semiconductors

Author: Vasyl Tomashyk

Publisher: CRC Press

Published: 2023-09-27

Total Pages: 1509

ISBN-13: 1000923290

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IV–VI and IV–VI2 semiconductors have attracted considerable attention due to their applications in the fabrication of electronic and optoelectronic devices as light-emitting diodes and solar cells. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in quaternary systems based on IV–VI and IV–VI2 semiconductors, providing the first systematic account of phase equilibria in quaternary systems based on IV–VI and IV–VI2 semiconductors and making research originally published in Ukrainian and Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid-state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid-state physicists. Key Features: • Provides up-to-date experimental and theoretical information. • A source of information for synthesizing semiconducting materials with predetermined properties. • Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases.

Gallium Nitride (GaN)
Gallium Nitride (GaN)

Author: Farid Medjdoub

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 372

ISBN-13: 1482220040

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Addresses a Growing Need for High-Power and High-Frequency Transistors Gallium Nitride (GaN): Physics, Devices, and Technology offers a balanced perspective on the state of the art in gallium nitride technology. A semiconductor commonly used in bright light-emitting diodes, GaN can serve as a great alternative to existing devices used in microelectronics. It has a wide band gap and high electron mobility that gives it special properties for applications in optoelectronic, high-power, and high-frequency devices, and because of its high off-state breakdown strength combined with excellent on-state channel conductivity, GaN is an ideal candidate for switching power transistors. Explores Recent Progress in High-Frequency GaN Technology Written by a panel of academic and industry experts from around the globe, this book reviews the advantages of GaN-based material systems suitable for high-frequency, high-power applications. It provides an overview of the semiconductor environment, outlines the fundamental device physics of GaN, and describes GaN materials and device structures that are needed for the next stage of microelectronics and optoelectronics. The book details the development of radio frequency (RF) semiconductor devices and circuits, considers the current challenges that the industry now faces, and examines future trends. In addition, the authors: Propose a design in which multiple LED stacks can be connected in a series using interband tunnel junction (TJ) interconnects Examine GaN technology while in its early stages of high-volume deployment in commercial and military products Consider the potential use of both sunlight and hydrogen as promising and prominent energy sources for this technology Introduce two unique methods, PEC oxidation and vapor cooling condensation methods, for the deposition of high-quality oxide layers A single-source reference for students and professionals, Gallium Nitride (GaN): Physics, Devices, and Technology provides an overall assessment of the semiconductor environment, discusses the potential use of GaN-based technology for RF semiconductor devices, and highlights the current and emerging applications of GaN.

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2
State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 647

ISBN-13: 1566775515

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Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

Bibliography
Bibliography

Author: Pierre Villars

Publisher: Walter de Gruyter

Published: 2012-12-21

Total Pages: 1827

ISBN-13: 3110276658

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By browsing about 10 000 000 scientific articles of over 200 major journals mainly in a 'cover to cover approach' some 200 000 publications were selected. The extracted data is part of the following fundamental material research fields: crystal structures (S), phase diagrams (also called constitution) (C) and the comprehensive field of intrinsic physical properties (P). This work has been done systematically starting with the literature going back to 1900. The above mentioned research field codes (S, C, P) as well as the chemical systems investigated in each publication were included in the present work. The aim of the Inorganic Substances Bibliography is to provide researchers with a comprehensive compilation of all up to now published scientific publications on inorganic systems in only three handy volumes.

Ternary Alloys Based on IV-VI and IV-VI2 Semiconductors
Ternary Alloys Based on IV-VI and IV-VI2 Semiconductors

Author: Vasyl Tomashyk

Publisher: CRC Press

Published: 2022-06-17

Total Pages: 346

ISBN-13: 9780367639235

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IV-VI and IV-VI2 semiconductors are among the most interesting materials in semiconductor physics. The electrical properties of these semiconductors can also be tuned by adding impurity atoms. These semiconductors either have already found use or are promising materials for infrared sensors and sources, thermoelectric elements, solar cells, memory elements, etc. The basic characteristics of these compounds, namely, narrow band gap, high permittivity, relatively high radiation resistance, high mobility of charge carriers, and high bond ionicity, are unique among semiconductor substances. Because of their wide application in various devices, the search for new semiconductor materials and the improvement of existing materials is an important field of study. Doping with impurities is a common method of modifying and diversifying the properties of physical and chemical semiconductors. This book covers all known information about phase relations in ternary systems based on IV-VI and IV-VI2 semiconductors, providing еhe first systematic account of phase equilibria in ternary systems based on IIV-VI and IV-VI2 semiconductors and making research originally published in Russian accessible to the wider scientific community. This book will be of interest to undergraduate and graduate students studying materials science, solid state chemistry, and engineering. It will also be relevant for researchers at industrial and national laboratories, in addition to phase diagram researchers, inorganic chemists, and solid state physicists. Provides up-to-date experimental and theoretical information Allows readers to synthesize semiconducting materials with predetermined properties Delivers a critical evaluation of many industrially important systems presented in the form of two-dimensional sections for the condensed phases