The large crystals of semiconducting and superconducting materials used for electronic and optical devices are usually grown from the melt by Czochralski or Bridgman method and their quality is significantly affected by the melt flow and related heat and mass transfer. Recent intensive research activities in this area covering crystal growth in microgravity, crystal growth of superconducting materials, crystal growth in high pressure, the commercial development of pullers that can produce crystals with large diameters etc. have substantially raised the expectation for numerous new practical applications.
A valuable, timely book for the crystal growth community, edited by one of the most respected members in the field. Contents cover all the important materials from silicon through the III-V and II-IV compounds to oxides, nitrides, fluorides, carbides and diamonds International group of contributors from academia and industry provide a balanced treatment Includes global interest with particular relevance to: USA, Canada, UK, France, Germany, Netherlands, Belgium, Italy, Spain, Switzerland, Japan, Korea, Taiwan, China, Australia and South Africa
The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
This comprehensive handbook covers the diverse aspects of chemical vapor transport reactions from basic research to important practical applications. The book begins with an overview of models for chemical vapor transport reactions and then proceeds to treat the specific chemical transport reactions for the elements, halides, oxides, sulfides, selenides, tellurides, pnictides, among others. Aspects of transport from intermetallic phases, the stability of gas particles, thermodynamic data, modeling software and laboratory techniques are also covered. Selected experiments using chemical vapor transport reactions round out the work, making this book a useful reference for researchers and instructors in solid state and inorganic chemistry.
Motivated by international competition and an easy access to high-speed computers the manufacturing and materials processing industry has seen many changes in recent times. New techniques are constantly being devloped based on a broad range of basic sciences including physics, chemistry and particularly thermal-fluids sciences and kinetics. In order to produce and treat massive products, the industry is also in need of a very wide range of engineering knowledge and skill for integrating metallurgy, mechanics, electricity, transport phenomena, instrumentation and computer control. This monograph covers a part of these demands, namely by presenting the available knowledge on transport phenomena in manufacturing and materials processing. It is divided into four parts. Part I deals with the fundamentals of transport phenomena, including the transfer of momentum, energy, mass, electric and magnetic properties. Parts II and III are concerned with applications of the fundamentals in transport phenomena occurring in manufacturing and materials processing, respectively. Emphasis has been placed on common aspects of both discciplines, such as forming, machining, welding, casting, injection molding, surface processes, heating and cooling, solidification, crystal growth and diffusion. Part IV deals with beam technology and microgravity, two topics of current importance.
1 The content ofthis article is based on a German book version ) which appeared at the end of the year 1986. The author tried to incorporate - as far as possible - new important results published in the last year. But the literature in the field of "convection and inhomogeneities in crystal growth from the melt" has increased so much in the meantime that the reader and the collegues should make allowance for any incompleteness, also in the case that their important contributions have not been cited. This could for example hold for problems related to the Czochralski growth. But especially for this topic the reader may be refered to the forthcoming volume of this series, which contains special contributions on "Surface Tension Driven Flow in Crystal Growth Melts" by D. Schwabe and on "Convection in Czochralski Melts" by M. Mihelcic, W. Uelhoff, H. Wenzl and K. Wingerath. The preparation of this manuscript has been supported by several women whose help is gratefully acknowledged by the autor: Mrs. Gisela Neuner for the type writing, Mrs. Abigail Sanders, Mrs. Fiona Eels and especially Prof. Nancy Haegel for their help in questions of the English language and Mrs. Christa Weber for reading corrections. Also the good cooperation with the Springer Verlag, especially Mrs. Bohlen and with the managing editor of Crystals, Prof. H. C. Freyhardt, who critically read the manuscript, is acknowledged.
Crystals are the unacknowledged pillars of modern technology. The modern technological developments depend greatly on the availability of suitable single crystals, whether it is for lasers, semiconductors, magnetic devices, optical devices, superconductors, telecommunication, etc. In spite of great technological advancements in the recent years, we are still in the early stage with respect to the growth of several important crystals such as diamond, silicon carbide, PZT, gallium nitride, and so on. Unless the science of growing these crystals is understood precisely, it is impossible to grow them as large single crystals to be applied in modern industry. This book deals with almost all the modern crystal growth techniques that have been adopted, including appropriate case studies. Since there has been no other book published to cover the subject after the Handbook of Crystal Growth, Eds. DTJ Hurle, published during 1993-1995, this book will fill the existing gap for its readers. The book begins with "Growth Histories of Mineral Crystals" by the most senior expert in this field, Professor Ichiro Sunagawa. The next chapter reviews recent developments in the theory of crystal growth, which is equally important before moving on to actual techniques. After the first two fundamental chapters, the book covers other topics like the recent progress in quartz growth, diamond growth, silicon carbide single crystals, PZT crystals, nonlinear optical crystals, solid state laser crystals, gemstones, high melting oxides like lithium niobates, hydroxyapatite, GaAs by molecular beam epitaxy, superconducting crystals, morphology control, and more. For the first time, the crystal growth modeling has been discussed in detail with reference to PZT and SiC crystals.
Crystallization is an important separation and purification process used in industries ranging from bulk commodity chemicals to specialty chemicals and pharmaceuticals. In recent years, a number of environmental applications have also come to rely on crystallization in waste treatment and recycling processes.The authors provide an introduction to the field of newcomers and a reference to those involved in the various aspects of industrial crystallization. It is a complete volume covering all aspects of industrial crystallization, including material related to both fundamentals and applications. This new edition presents detailed material on crystallization of biomolecules, precipitation, impurity-crystal interactions, solubility, and design.Provides an ideal introduction for industrial crystallization newcomers Serves as a worthwhile reference to anyone involved in the fieldCovers all aspects of industrial crystallization in a single, complete volume
Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic
