Physics and Modeling of Tera- and Nano-Devices is a compilation of papers by well-respected researchers working in the field of physics and modeling of novel electronic and optoelectronic devices. The topics covered include devices based on carbon nanotubes, generation and detection of terahertz radiation in semiconductor structures including terahertz plasma oscillations and instabilities, terahertz photomixing in semiconductor heterostructures, spin and microwave-induced phenomena in low-dimensional systems, and various computational aspects of device modeling. Researchers as well as graduate and postgraduate students working in this field will benefit from reading this book.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
This book surveys the advanced simulation methods needed for proper modeling of state-of-the-art nanoscale devices. It systematically describes theoretical approaches and the numerical solutions that are used in explaining the operation of both power devices as well as nano-scale devices. It clearly explains for what types of devices a particular method is suitable, which is the most critical point that a researcher faces and has to decide upon when modeling semiconductor devices.
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.
Radioisotopes have been used for power sources in heart pacemakers and space applications dating back to the 50's. Two key properties of radioisotope power sources are high energy density and long half-life compared to chemical batteries. The tritium battery used in heart pacemakers exceeds 500 mW-hr, and is being evaluated by the University of Florida for feasibility as a MEMS (MicroElectroMechanical Systems) power source. Conversion of radioisotope sources into electrical power within the constraints of nano-scale dimensions requires cutting-edge technologies and novel approaches. Some advances evolving in the III-V and II-IV semiconductor families have led to a broader consideration of radioisotopes rather free of radiation damage limitations. Their properties can lead to novel battery configurations designed to convert externally located emissions from a highly radioactive environment.
Quantitative understanding of the parasitic capacitances and inductances, and the resultant propagation delays and crosstalk phenomena associated with the metallic interconnections on the very large scale integrated (VLSI) circuits has become extremely important for the optimum design of the state-of-the-art integrated circuits. More than 65 percent of the delays on the integrated circuit chip occur in the interconnections and not in the transistors on the chip. Mathematical techniques to model the parasitic capacitances, inductances, propagation delays, crosstalk noise, and electromigration-induced failure associated with the interconnections in the realistic high-density environment on a chip will be discussed. A One-Semester Course in Modeling of VLSI Interconnections also includes an overview of the future interconnection technologies for the nanotechnology circuits.
Nano-scale materials have unique electronic, optical, and chemical properties that make them attractive for a new generation of devices. In the second edition of Modeling, Characterization, and Production of Nanomaterials: Electronics, Photonics, and Energy Applications, leading experts review the latest advances in research in the understanding, prediction, and methods of production of current and emerging nanomaterials for key applications. The chapters in the first half of the book cover applications of different modeling techniques, such as Green's function-based multiscale modeling and density functional theory, to simulate nanomaterials and their structures, properties, and devices. The chapters in the second half describe the characterization of nanomaterials using advanced material characterization techniques, such as high-resolution electron microscopy, near-field scanning microwave microscopy, confocal micro-Raman spectroscopy, thermal analysis of nanoparticles, and applications of nanomaterials in areas such as electronics, solar energy, catalysis, and sensing. The second edition includes emerging relevant nanomaterials, applications, and updated modeling and characterization techniques and new understanding of nanomaterials. - Covers the close connection between modeling and experimental methods for studying a wide range of nanomaterials and nanostructures - Focuses on practical applications and industry needs through a solid outlining of the theoretical background - Includes emerging nanomaterials and their applications in spintronics and sensing
Semiconductor Nanodevices: Physics, Technology and Applications explores recent advances in the field. The behaviour of these devices is controlled by regions of nanoscale dimensions which typically determine the local density of electronic states and lead to the observation of a range of quantum effects with significant potential for exploitation. The book opens with an introduction describing the development of this research field over the past few decades which contrasts quantum-controlled devices to conventional nanoscale electronic devices where an emphasis has often been placed on minimising quantum effects. This introduction is followed by seven chapters describing electrical nanodevices and five chapters describing opto-electronic nanodevices; individual chapters review important recent advances. These chapters include specific fabrication details for the structures and devices described as well as a discussion of the physics made accessible. It is an important reference source for physicists, materials scientists and engineers who want to learn more about how semiconductor-based nanodevices are being developed for both science and potential industrial applications. The section on electrical devices includes chapters describing the study of electron correlation effects using transport in quantum point contacts and tunnelling between one-dimensional wires; the high-frequency pumping of single electrons; thermal effects in quantum dots; the use of silicon quantum dot devices for qubits and quantum computing; transport in topological insulator nanoribbons and a comprehensive discussion of noise in electrical nanodevices. The optical device section describes the use of self-assembled III-V semiconductor nanostructures embedded in devices for a range of applications, including quantum dots for single and entangled photon sources, quantum dots and nanowires in lasers and quantum dots in solar cells. - Explores the major industrial applications of semiconductor nanodevices - Explains fabrication techniques for the production of semiconductor nanodevices - Assesses the challenges for the mass production of semiconductor nanodevices
Nanotechnologies are being applied to the biotechnology area, especially in the area of nano material synthesis. Until recently, there has been little research into how to implement nano/bio materials into the device level. “Nano and Bio Electronics Packaging” discusses how nanofabrication techniques can be used to customize packaging for nano devices with applications to biological and biomedical research and products. Covering such topics as nano bio sensing electronics, bio device packaging, NEMs for Bio Devices and much more.
