The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation
The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation

Author: Mahdi Pourfath

Publisher: Springer

Published: 2014-07-05

Total Pages: 268

ISBN-13: 370911800X

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For modeling the transport of carriers in nanoscale devices, a Green-function formalism is the most accurate approach. Due to the complexity of the formalism, one should have a deep understanding of the underlying principles and use smart approximations and numerical methods for solving the kinetic equations at a reasonable computational time. In this book the required concepts from quantum and statistical mechanics and numerical methods for calculating Green functions are presented. The Green function is studied in detail for systems both under equilibrium and under nonequilibrium conditions. Because the formalism enables rigorous modeling of different scattering mechanisms in terms of self-energies, but an exact evaluation of self-energies for realistic systems is not possible, their approximation and inclusion in the quantum kinetic equations of the Green functions are elaborated. All the elements of the kinetic equations, which are the device Hamiltonian, contact self-energies and scattering self-energies, are examined and efficient methods for their evaluation are explained. Finally, the application of these methods to study novel electronic devices such as nanotubes, graphene, Si-nanowires and low-dimensional thermoelectric devices and photodetectors are discussed.

Handbook of Optoelectronic Device Modeling and Simulation
Handbook of Optoelectronic Device Modeling and Simulation

Author: Joachim Piprek

Publisher: CRC Press

Published: 2017-10-10

Total Pages: 835

ISBN-13: 149874947X

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• Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.

Nanostructured Semiconductors
Nanostructured Semiconductors

Author: Konstantinos Termentzidis

Publisher: CRC Press

Published: 2017-09-01

Total Pages: 475

ISBN-13: 131534078X

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The book is devoted to nanostructures and nanostructured materials containing both amorphous and crystalline phases with a particular focus on their thermal properties. It is the first time that theoreticians and experimentalists from different domains gathered to treat this subject. It contains two distinct parts; the first combines theory and simulations methods with specific examples, while the second part discusses methods to fabricate nanomaterials with crystalline and amorphous phases and experimental techniques to measure the thermal conductivity of such materials. Physical insights are given in the first part of the book, related with the existing theoretical models and the state of art simulations methods (molecular dynamics, ab-initio simulations, kinetic theory of gases). In the second part, engineering advances in the nanofabrication of crystalline/amorphous heterostructures (heavy ion irradiation, electrochemical etching, aging/recrystallization, ball milling, PVD, laser crystallization and magnetron sputtering) and adequate experimental measurement methods are analyzed (Scanning Thermal Microscopy, Raman, thermal wave methods and x-rays neutrons spectroscopy).

Graphene Nanostructures
Graphene Nanostructures

Author: Yaser Banadaki

Publisher: CRC Press

Published: 2019-07-16

Total Pages: 213

ISBN-13: 0429663870

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Tremendous innovations in electronics and photonics over the past few decades have resulted in the downsizing of transistors in integrated circuits, which are now approaching atomic scales. This will soon result in the creation of a growing knowledge gap between the underlying technology and state-of-the-art electronic device modeling and simulations. This book bridges the gap by presenting cutting-edge research in the computational analysis and mathematical modeling of graphene nanostructures as well as the recent progress on graphene transistors for nanoscale circuits. It inspires and educates fellow circuit designers and students in the field of emerging low-power and high-performance circuit designs based on graphene. While most of the books focus on the synthesis, fabrication, and characterization of graphene, this book shines a light on graphene models and their circuit simulations and applications in photonics. It will serve as a textbook for graduate-level courses in nanoscale electronics and photonics design and appeal to anyone involved in electrical engineering, applied physics, materials science, or nanotechnology research.

Stress and Strain Engineering at Nanoscale in Semiconductor Devices
Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Author: Chinmay K. Maiti

Publisher: CRC Press

Published: 2021-06-29

Total Pages: 275

ISBN-13: 1000404935

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Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Extended Non-Equilibrium Thermodynamics
Extended Non-Equilibrium Thermodynamics

Author: Hatim Machrafi

Publisher: CRC Press

Published: 2019-02-21

Total Pages: 226

ISBN-13: 1351021931

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Extended Non-Equilibrium Thermodynamics provides powerful tools departing not from empirical or statistical considerations but from fundamental thermodynamic laws, proposing final solutions that are readily usable and recognizable for students, researchers and industry. The book deals with methods that allow combining easily the present theory with other fields of science, such as fluid and solid mechanics, heat and mass transfer processes, electricity and thermoelectricity, and so on. Not only are such combinations facilitated, but they are incorporated into the developments in such a way that they become part of the theory. This book aims at providing for a systematic presentation of Extended Non-Equilibrium Thermodynamics in nanosystems with a high degree of applicability. Furthermore, the book deals with how physical properties of systems behave as a function of their size. Moreover, it provides for a systematic approach to understand the behavior of thermal, electrical, thermoelectric, photovoltaic and nanofluid properties in nanosystems. Experimental results are used to validate the theory, the comparison is analysed, justified and discussed, and the theory is then again used to understand better experimental observations. The new developments in this book, being recognizable in relation with familiar concepts, should make it appealing for academics and researchers to teach and apply and graduate students to use. The text in this book is intended to bring attention to how the theory can be applied to real-life applications in nanoscaled environments. Case studies, and applications of theories, are explored including thereby nanoporous systems, solar panels, nanomedicine drug permeation and properties of nanoporous scaffolds. Explores new generalized thermodynamic models Provides introductory context of Extended Non-Equilibrium Thermodynamics within classical thermodynamics, theoretical fundamentals and several applications in nanosystems Provides for a systematic approach to understand the behavior of thermal, electric, thermoelectric and viscous properties as a function of several parameters in nanosystems Includes reflections to encourage the reader to think further and put the information into context Examines future developments of new constitutive equations and theories and places them in the framework of real-life applications in the energetic and medical sectors, such as photovoltaic and thermoelectric devices, nanoporous media, drug delivery and scaffolds

Fabless Semiconductor Manufacturing
Fabless Semiconductor Manufacturing

Author: Chinmay K. Maiti

Publisher: CRC Press

Published: 2022-11-17

Total Pages: 314

ISBN-13: 1000638111

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This book deals with 3D nanodevices such as nanowire and nanosheet transistors at 7 nm and smaller technology nodes. It discusses technology computer-aided design (TCAD) simulations of stress- and strain-engineered advanced semiconductor devices, including III-nitride and RF FDSOI CMOS, for flexible and stretchable electronics. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including fabless intelligent manufacturing. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. In order to extend the role of TCAD in the More-than-Moore era, the design issues related to strain engineering for flexible and stretchable electronics have been introduced for the first time.

Theory of Transport Properties of Semiconductor Nanostructures
Theory of Transport Properties of Semiconductor Nanostructures

Author: Eckehard Schöll

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 394

ISBN-13: 1461558077

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Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Toward Quantum FinFET
Toward Quantum FinFET

Author: Weihua Han

Publisher: Springer Science & Business Media

Published: 2013-11-23

Total Pages: 369

ISBN-13: 3319020218

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This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices