Participants of the symposium held in April 1998 in San Francisco as part of the 1998 MRS Spring Meeting cleared the fog at least on some aspects of solid-state diffusion, particularly experimental and simulation techniques that provide access to atomic-scale mechanisms of diffusion in diverse classes of crystalline materials. The 68 contributions (including 18 invited talks) added to the knowledge base in several key areas: diffusion mechanisms in metals and alloys, in intermetallic compounds, and in semiconductors; grain boundary and surface diffusion, and diffusion in quasicrystals; and diffusion and ionic conductivity in ionic materials. Annotation copyrighted by Book News, Inc., Portland, OR
This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.
This volume, the 3rd in a series from the Materials Research Society, examines the current state of the art in thermoelectric materials research. The focus is on both the scientific capabilities currently employed, and those which are needed to provide new classes of thermoelectric materials with significant enhancement in the figure of merit, Z (100% or greater). This is a challenge for the thermoelectrics community, and thus drives the discussion towards new and innovative directions. Potential applications for thermoelectric technologies are discussed, with emphasis on typing specific materials properties/issues to the desired applications. Overviews of current application needs from thermoelectric devices, and thus the requirements for new materials or device design, are also featured. The volume is multidisciplinary in nature, with representation from the fields of physics, chemistry and materials science. Theoretical studies are presented, as well as experimental efforts in solid-state synthesis, new bulk materials, think-film and superlattice development, nanostructure materials, and new developments in property measurement, especially thermal conductivity.
The 31 papers, about half of the symposium's presentations, were selected to provide a representative sampling of the present status of materials used in vacuum microelectronics. They range across all aspects of electron field emission from theory and physical mechanisms to device structure, but many focus on the fabrication, characterization, and modeling of electron emissive materials. The sections cover field-emitter arrays and applications, carbon and wide-bandgap cathodes, and other cathode materials. Reproduced from typescripts. Annotation copyrighted by Book News, Inc., Portland, OR