Author: D. K. Biegelsen

Publisher:

Published: 1985

Total Pages: 761

ISBN-13:

The symposium was devoted to those topical areas evolving from the subject of laser annealing. The material covered in this symposium has three distinct foci. First is the field of sub-microsecond (to femptosecond) interactions of energy beams with solids and the resultant material changes on similar time scales. Issues of energy transfer, internal equilibration, solid phase regrowth of amorphized layers, ultrarapid quenching of amorphous semiconductors dominate this topic. A second focus is the maturing area of rapid thermal processing (.001 to 100 seconds). The materials science issues of defect and impurity kinetics, and silicide and alloy development underlie a strong technological thrust. The third focus is the area of semiconductor growth over insulators by lateral epitaxy. Studies concerning low angle grain boundaries, the characteristic microscopic defects in zone melting recrystallization of thin films, and increasing emphasis on solid phase lateral epitaxy are showing strong progress towards technologically suitable preparation techniques.