Materials and Technology for Nonvolatile Memories: Volume 1729

Materials and Technology for Nonvolatile Memories: Volume 1729

Author: Panagiotis Dimitrakis

Publisher: Materials Research Society

Published: 2015-09-09

Total Pages: 0

ISBN-13: 9781605117065

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Symposium M, 'Materials and Technology for Nonvolatile Memories', was held November 30-December 5 at the 2014 MRS Fall Meeting in Boston, Massachusetts, which was a follow up of previous symposia on nonvolatile memories. Main research areas featured in Symposium M were advanced Flash memories, organic memories, resistive switching memories (ReRAM), magnetoresistive random access memories (MRAM), ferroelectric random access memories (FeRAM), phase-change memories, as well as emerging materials and technologies for nonvolatile memories. In addition, a highly successful one-day tutorial session, 'Emerging Materials and Devices for Nonvolatile Memories', was conducted and included tutorials on ReRAM, polymer/organic materials, MRAM, and Flash memories. This symposium proceedings volume represents the recent advances and related material issues on various kinds of nonvolatile memory technologies. The papers in this volume are categorized according to each type of memory technology and are not in the order of the symposium presentations.


Materials and Processes for Nonvolatile Memories: Volume 997

Materials and Processes for Nonvolatile Memories: Volume 997

Author: Tingkai Li

Publisher: Materials Research Society

Published: 2007-11-07

Total Pages: 0

ISBN-13: 9781558999572

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This book, first published in 2007 and the second in a series from MRS, focuses on the scientific and technological exploration of materials and devices with nonvolatile memory properties. Strong and increasing interest in nonvolatile memories, both domestic and international, indicates the worldwide importance of these materials and memory devices. The papers in this volume represent the latest technical advancements and information on nonvolatile memory devices from universities, national laboratories and industry. They also provide insight into emerging trends. Research results are presented for: polymer and molecular nonvolatile memory devices; flash nonvolatile memory devices; nanoparticle nonvolatile memory devices; resistance switching nonvolatile memory devices; ferroelectric nonvolatile memory devices; phase-change nonvolatile memory devices; and magnetic nonvolatile memory devices and others.


Materials and Processes for Nonvolatile Memories:

Materials and Processes for Nonvolatile Memories:

Author: A. Claverie

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 410

ISBN-13: 9781107409132

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This 2005 book focuses on the scientific and technological exploration of materials and devices with nonvolatile memory properties. Scientists and engineers working on diverse memory technologies come together here to highlight possible advantages and disadvantages of each expertise. A broad range of topics are featured - from fundamental materials properties and integration, to demonstration and industrial devices. Invited presentations are broad-based and more tutorial in nature, helping to illustrate major trends. Topics include: nonvolatile memories with discrete storage nodes; ferroelectric memories; magnetoresistive randam access memory; nanoparticle memories; materials for nonvolatile memories and organic and resistive memories.


Charge-Trapping Non-Volatile Memories

Charge-Trapping Non-Volatile Memories

Author: Panagiotis Dimitrakis

Publisher: Springer

Published: 2015-08-05

Total Pages: 219

ISBN-13: 3319152904

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This book describes the basic technologies and operation principles of charge-trapping non-volatile memories. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved as well as the fundamental properties of the technology. Modern material properties used as charge-trapping layers, for new applications are introduced.


Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology

Author: Yoshio Nishi

Publisher: Elsevier

Published: 2014-06-24

Total Pages: 456

ISBN-13: 0857098098

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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses Examines improvements to flash technology, charge trapping, and resistive random access memory Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)


Emerging Non-Volatile Memories

Emerging Non-Volatile Memories

Author: Seungbum Hong

Publisher: Springer

Published: 2014-11-18

Total Pages: 280

ISBN-13: 1489975373

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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.


New Functional Materials and Emerging Device Architectures for Nonvolatile Memories: Volume 1337

New Functional Materials and Emerging Device Architectures for Nonvolatile Memories: Volume 1337

Author: Dirk J. Wouters

Publisher: Materials Research Society

Published: 2011-11-30

Total Pages: 0

ISBN-13: 9781605113142

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Symposium Q, "New Functional Materials and Emerging Device Architectures for Nonvolatile Memories," held April 25−29 at the 2011 MRS Spring Meeting in San Francisco, California, was a follow up of a previous series of related symposia on nonvolatile memories at MRS annual meetings. The high attendance and large number of papers submitted indicate continuing strong international interest and research efforts in the field of emerging new nonvolatile memory materials. Main areas of research featured in this symposium were advanced flash memories, phase change memories, and resistive switching memories. In addition, ferroelectric memories, organic memories, and new emerging memories remained of interest. With international contributions from universities, research centers and industry, this volume reflects the recent advances in material science and their influence on the memory technologies addressed in this symposium.