Long-Wave (8-12 Micrometers) Quantum-Dot Infrared Photodetectors

Long-Wave (8-12 Micrometers) Quantum-Dot Infrared Photodetectors

Author:

Publisher:

Published: 2005

Total Pages: 13

ISBN-13:

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This is the Final Report of ARO Grant No. DAADl9-02-l-0437. It is a report on the characteristics of(InGa)As/GaAs long-wave (8-12 um) quantum-dot infrared photodetector structures. Pcak responsivities and dctectivitics were measured using a calibrated black body source. The results of this work indicate that for the structures characterized here, the maximum operating temperature is limited to %O5 K. No effort was made in the original design of the device structure for higher temperature operation. For operation at temperatures higher than this, one must investigate other device structures; such structures have been identified and will be the subject of future work. The work reported here has paved the way to the identification of candidate device structures for high operating temperature (HOT) quantum-dot detector.


Infrared Nanophotonics

Infrared Nanophotonics

Author: Tadaaki Nagao

Publisher: MDPI

Published: 2021-04-21

Total Pages: 174

ISBN-13: 3036501746

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Infrared light radiates from almost all the matter on earth, and its strategic use will be an important issue for the enhancement of human life and the sustainable development of modern industry. Since its frequency is in the same region as phonons or molecular vibrations of materials, measuring its emission or absorption spectra helps us in characterizing and identifying materials in a non-destructive manner. Meanwhile, if we can spectroscopically design infrared emission by tuning chemical composition or artificially controlling nano- to mesoscale structures, this will have a great impact on industrial applications, such as thermophotovoltaics, energy-saving drying furnaces, spectroscopic infrared light sources, and various types of infrared sensors. In this Special Issue, we encourage submissions from researchers who are working on infrared nanophotonics based on MEMS/NEMS, and nanomaterials science, ranging from materials synthesis, to device fabrications, electromagnetic simulations, and thermal managements. Important topics of growing interest are wavelength-selective infrared emitters and detectors, where we can see rapid development in the fields of nano-plasmonics and metamaterials, and we invite such topics for inclusion in this Special Issue. We also encourage submissions on nano-materials science such as on graphene-based infrared detectors/emitters, and nanostructured narrow-band gap semiconductors.


Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications

Author: Sheng S. Li

Publisher:

Published: 2002

Total Pages: 12

ISBN-13:

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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3 - 5 micrometers mid-wavelength infrared (MWIR) and 8 - 12 micrometers long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: lambda(sub c)> 14 micrometers) detection in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, the multi-color QWIP required for advanced IR sensing and imaging applications have also been emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4- color) QWIPs using multi-stack quantum wells with different well width and depth and voltage-tunable triple-coupled quantum well (TCQW) structure for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated. In this paper, the design, fabrication, and characterization of a voltage-tunable 2-stack 3-color QWIP for MW/LW/LW IR detection and a 3-stack 3-color QWIP for detection in the water, ozone, and CO2 atmospheric blocking bands are depicted.


Infrared and Terahertz Detectors, Third Edition

Infrared and Terahertz Detectors, Third Edition

Author: Antoni Rogalski

Publisher: CRC Press

Published: 2019-01-10

Total Pages: 1044

ISBN-13: 1351984764

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This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.


Advances in Infrared Photodetectors

Advances in Infrared Photodetectors

Author:

Publisher: Elsevier

Published: 2011-05-03

Total Pages: 385

ISBN-13: 0123813387

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Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry


Quantum Dot Photodetectors

Quantum Dot Photodetectors

Author: Xin Tong

Publisher: Springer Nature

Published: 2021-09-17

Total Pages: 319

ISBN-13: 3030742709

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This book presents a comprehensive overview of state-of-the-art quantum dot photodetectors, including device fabrication technologies, optical engineering/manipulation strategies, and emerging photodetectors with building blocks of novel quantum dots (e.g. perovskite) as well as their hybrid structured (e.g. 0D/2D) materials. Semiconductor quantum dots have attracted much attention due to their unique quantum confinement effect, which allows for the facile tuning of optical properties that are promising for next-generation optoelectronic applications. Among these remarkable properties are large absorption coefficient, high photosensitivity, and tunable optical spectrum from ultraviolet/visible to infrared region, all of which are very attractive and favorable for photodetection applications. The book covers both fundamental and frontier research in order to stimulate readers' interests in developing novel ideas for semiconductor photodetectors at the center of future developments in materials science, nanofabrication technology and device commercialization. The book provides a knowledge sharing platform and can be used as a reference for researchers working in the fields of photonics, materials science, and nanodevices.


Comprehensive Semiconductor Science and Technology

Comprehensive Semiconductor Science and Technology

Author:

Publisher: Newnes

Published: 2011-01-28

Total Pages: 3572

ISBN-13: 0080932282

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Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts


Infrared Detectors

Infrared Detectors

Author: Antonio Rogalski

Publisher: CRC Press

Published: 2010-11-15

Total Pages: 900

ISBN-13: 1420076728

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Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un


Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

Quaternary Capped In(Ga)As/GaAs Quantum Dot Infrared Photodetectors

Author: Sourav Adhikary

Publisher: Springer

Published: 2017-09-06

Total Pages: 72

ISBN-13: 9811052905

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This book introduces some alternative methods for enhancing the performance of In(Ga)As/GaAs-based quantum dot infrared photodetectors (QDIPs). In(Ga)As/GaAs-based QDIPs and focal plane array (FPA) cameras have wide application in fields such as military and space science. The core of the study uses a combination of quaternary In0.21Al0.21Ga0.58As and GaAs spacer as a capping layer on In(Ga)As/GaAs quantum dots in the active region of the detector structure. For the purposes of optimization, three types of samples growths are considered with different capping thicknesses. The results presented include TEM, XRD and photoluminescence studies that compare combination barrier thickness and its effect on structural and optical properties. Compressive strain within the heterostructure, thermal stability in high temperature annealing, spectral response, shifts in PL peaks peak,and responsivity and detectivity are all considered. The results also present a narrow spectral width that was obtained by using InAs QDs which is very useful for third generation FPA camera application. The book details effect of post-growth rapid thermal annealing on device characteristics and methods to enhance responsivity and peak detectivity. The contents of this book will be useful to researchers and professionals alike.


Intersubband Infrared Photodetectors

Intersubband Infrared Photodetectors

Author: Victor Ryzhii

Publisher: World Scientific

Published: 2003-06-25

Total Pages: 359

ISBN-13: 9814486442

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Infrared technologies are very important for a wide range of military, scientific and commercial applications. Devices and systems based on semiconductor heterostructure and quantum well and quantum dot structures open up a new era in infrared technologies.This book deals with various topics related to the latest achievements in the development of intersubband infrared photodetectors, reviewed by top experts in the field. It covers physical aspects of the operation of the devices as well as details of their design in different applications. The papers included in the book will be useful for researchers and engineers interested in the physics of optoelectronic devices as well as their practical design and applications.