Localized states in semiconductors studied by isothermal capacitance transient spectroscopy
Author: Hideyo Okushi
Publisher:
Published: 1986
Total Pages: 100
ISBN-13:
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Author: Hideyo Okushi
Publisher:
Published: 1986
Total Pages: 100
ISBN-13:
DOWNLOAD EBOOKAuthor: I. Ohdomari
Publisher: Elsevier
Published: 2017-05-03
Total Pages: 600
ISBN-13: 1483290484
DOWNLOAD EBOOKThis book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.
Author:
Publisher:
Published: 1987
Total Pages: 660
ISBN-13:
DOWNLOAD EBOOKAuthor: Denki Shikenjo (Japan)
Publisher:
Published: 1985
Total Pages: 300
ISBN-13:
DOWNLOAD EBOOKAuthor: Tsunenobu Kimoto
Publisher: John Wiley & Sons
Published: 2014-09-23
Total Pages: 565
ISBN-13: 1118313550
DOWNLOAD EBOOKA comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author: Lionel M. Levinson
Publisher:
Published: 1994
Total Pages: 408
ISBN-13:
DOWNLOAD EBOOKThe proceedings of the November 1990 symposium, held in conjunction with the PAC RIM Meeting, comprise papers organized under five headings: overview (5 papers); ferrites and titanates (13 papers); varistors and conductors (9 papers); high-temperature superconductors (4 papers); and processing and c
Author: David A. Adler
Publisher: Springer
Published: 2013-12-19
Total Pages: 557
ISBN-13: 1489953612
DOWNLOAD EBOOKAuthor: Morigaki Kazuo
Publisher: World Scientific
Published: 1999-04-29
Total Pages: 432
ISBN-13: 9813104627
DOWNLOAD EBOOKThis is a useful textbook for graduate students in the fields of solid state physics and chemistry as well as electronic engineering. Presenting the fundamentals of amorphous semiconductors clearly, it will be essential reading for young scientists intending to develop new preparation techniques for more ideal amorphous semiconductors e.g. a-Si:H, to fabricate stable and efficient solar cells and thin film transistors and new artificial amorphous materials such as multilayers for quantum devices.A large portion is devoted to the latest developments of amorphous semiconductors including electronic properties of a-Si:H, nature of weak bonds and gap states in a-Si:H, mechanisms for light-induced defect creation in a-Si:H and chalcogenides, quantum phenomena in multilayer films.
Author: John H. Morrison
Publisher:
Published: 1973
Total Pages: 138
ISBN-13:
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