Lateral Solid Phase Epitaxy of Silicon and Application to the Fabrication of Metal Oxide Semiconductor Field Effect Transistors
Author: Brian Joseph Greene
Publisher:
Published: 2003
Total Pages: 180
ISBN-13:
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Author: Brian Joseph Greene
Publisher:
Published: 2003
Total Pages: 180
ISBN-13:
DOWNLOAD EBOOKAuthor: E.I. Givargizov
Publisher: Springer Science & Business Media
Published: 2013-11-21
Total Pages: 377
ISBN-13: 1489925600
DOWNLOAD EBOOKPresent-day scienceand technology have become increasingly based on studies and applications of thin films. This is especiallytrue of solid-state physics, semiconduc tor electronics, integrated optics, computer science, and the like. In these fields, it is necessary to use filmswith an ordered structure, especiallysingle-crystallinefilms, because physical phenomena and effects in such films are most reproducible. Also, active parts of semiconductor and other devices and circuits are created, as a rule, in single-crystal bodies. To date, single-crystallinefilms have been mainly epitaxial (or heteroepitaxial); i.e., they have been grown on a single-crystalline substrate, and principal trends, e.g., in the evolution of integrated circuits (lCs), have been based on continuing reduction in feature size and increase in the number of components per chip. However, as the size decreases into the submicrometer range, technological and physical limitations in integrated electronics become more and more severe. It is generally believed that a feature size of about 0.1um will have a crucial character. In other words, the present two-dimensional ICs are anticipated to reach their limit of minimization in the near future, and it is realized that further increase of packing density and/or functions might depend on three-dimensional integration. To solve the problem, techniques for preparation of single-crystalline films on arbitrary (including amorphous) substrates are essential.
Author:
Publisher:
Published: 2005
Total Pages: 840
ISBN-13:
DOWNLOAD EBOOKAuthor: Alexei Nazarov
Publisher: Springer Science & Business Media
Published: 2011-03-03
Total Pages: 437
ISBN-13: 3642158684
DOWNLOAD EBOOK"Semiconductor-On-Insulator Materials for NanoElectronics Applications” is devoted to the fast evolving field of modern nanoelectronics, and more particularly to the physics and technology of nanoelectronic devices built on semiconductor-on-insulator (SemOI) systems. The book contains the achievements in this field from leading companies and universities in Europe, USA, Brazil and Russia. It is articulated around four main topics: 1. New semiconductor-on-insulator materials; 2. Physics of modern SemOI devices; 3. Advanced characterization of SemOI devices; 4. Sensors and MEMS on SOI. "Semiconductor-On-Insulator Materials for NanoElectonics Applications” is useful not only to specialists in nano- and microelectronics but also to students and to the wider audience of readers who are interested in new directions in modern electronics and optoelectronics.
Author: E. Kasper
Publisher: CRC Press
Published: 2018-05-04
Total Pages: 411
ISBN-13: 1351093525
DOWNLOAD EBOOKThis subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: Brajesh Kumar Kaushik
Publisher: CRC Press
Published: 2018-11-16
Total Pages: 414
ISBN-13: 1351670212
DOWNLOAD EBOOKThe primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter
Author:
Publisher:
Published: 1995
Total Pages: 456
ISBN-13:
DOWNLOAD EBOOKLists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Author: Yuan Taur
Publisher: Cambridge University Press
Published: 2021-12-02
Total Pages: 627
ISBN-13: 1108480020
DOWNLOAD EBOOKA thoroughly updated third edition of an classic and widely adopted text, perfect for practical transistor design and in the classroom. Covering a variety of recent developments, the internationally renowned authors discuss in detail the basic properties and designs of modern VLSI devices, as well as factors affecting performance. Containing around 25% new material, coverage has been expanded to include high-k gate dielectrics, metal gate technology, strained silicon mobility, non-GCA (Gradual Channel Approximation) modelling of MOSFETs, short-channel FinFETS, and symmetric lateral bipolar transistors on SOI. Chapters have been reorganized to integrate the appendices into the main text to enable a smoother learning experience, and numerous additional end-of-chapter homework exercises (+30%) are included to engage students with real-world problems and test their understanding. A perfect text for senior undergraduate and graduate students taking advanced semiconductor devices courses, and for practicing silicon device professionals in the semiconductor industry.