Large Signal Modeling of GaN Device for High Power Amplifier Design
Author: Anwar Hasan Jarndal
Publisher: kassel university press GmbH
Published: 2006
Total Pages: 136
ISBN-13: 3899582586
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Author: Anwar Hasan Jarndal
Publisher: kassel university press GmbH
Published: 2006
Total Pages: 136
ISBN-13: 3899582586
DOWNLOAD EBOOKAuthor: Endalkachew Shewarega Mengistu
Publisher: kassel university press GmbH
Published: 2008
Total Pages: 153
ISBN-13: 3899583817
DOWNLOAD EBOOKAuthor: Matthias Rudolph
Publisher: Cambridge University Press
Published: 2011-10-13
Total Pages: 367
ISBN-13: 1139502263
DOWNLOAD EBOOKAchieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Author: Rui Ma
Publisher: kassel university press GmbH
Published: 2010
Total Pages: 144
ISBN-13: 3899588592
DOWNLOAD EBOOKFront cover -- Titelseite -- Impressum -- Acknowledgments -- Contents -- List of Abbreviations and Acronyms -- Abstract -- Zusammenfassung -- Chapter 1 Introduction -- 1.1 Principle of the Partitioning Design Approach -- 1.2 Dissertation Organization -- Chapter 2 Investigation of Planar-Interconnection -- 2.1 Active Chip Device Interconnection -- 2.1.1 Die Attach -- 2.1.2 Wire Bonding Pad-To-Microstrip -- 2.2 Microstrip-to-Microstrip Interconnection -- 2.2.1 Soldering -- 2.2.2 Multi-Wire Bonding -- 2.2.3 Copper Ribbon -- 2.2.4 Silver- Painting -- Chapter 3 Analysis and Modeling of Passive SMD Components -- 3.1 SMD Resistor -- 3.2 SMD Capacitor -- 3.3 SMD Inductor -- Chapter 4 Modeling of AlGaAs/GaAs HEMT Chip Device -- 4.1 AIGaAs/GaGa HEMT Chip -- 4.2 Modeling Approach Overview -- 4.3 Small-Signal Modeling -- 4.3.1 Extrinsic Parameter Extraction -- 4.3.2 Intrinsic Parameter Extraction -- 4.4 Large-Signal Modeling -- 4.4.1 Gate Current and Charge Models -- 4.4.2 Drain Current Model -- 4.4.3 Model Verification -- Chapter 5 Demonstrator Design of a Class-AB Power Amplifier Following -- 5.1 Micro-Packaged Device Characterization -- 5.1.1 Small-Signal Performance -- 5.1.2 Large-Signal Performance -- 5.2 Bias Network Design -- 5.2.1 Drain Bias Network -- 5.2.2 Gate Bias Network -- 5.3 Matching Network Design -- 5.3.1 Matching Impedance Determination -- 5.4 Power Amplifier Performance Evaluation -- 5.4.1 Small-Signal Performance -- 5.4.2 Large-Signal Performance -- Chapter 6 Conclusions and Outlook -- Appendix -- Appendix A THLR In-Fixture Calibration -- Appendix B Precise Determination of Substrate Permittivity -- Appendix C Schematic Circuit of the Designed Power Amplifier Demonstrator -- Appendix D Power Amplifier Design Following the Conventional Design Approach -- References -- Back cover
Author:
Publisher: kassel university press GmbH
Published:
Total Pages: 212
ISBN-13: 3899586557
DOWNLOAD EBOOKAuthor: Gunter Kompa
Publisher: Artech House
Published: 2019-12-31
Total Pages: 609
ISBN-13: 1630817457
DOWNLOAD EBOOKAll model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and gallium nitride (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Author: Tingwen Huang
Publisher: Springer
Published: 2012-11-05
Total Pages: 730
ISBN-13: 364234478X
DOWNLOAD EBOOKThe five volume set LNCS 7663, LNCS 7664, LNCS 7665, LNCS 7666 and LNCS 7667 constitutes the proceedings of the 19th International Conference on Neural Information Processing, ICONIP 2012, held in Doha, Qatar, in November 2012. The 423 regular session papers presented were carefully reviewed and selected from numerous submissions. These papers cover all major topics of theoretical research, empirical study and applications of neural information processing research. The 5 volumes represent 5 topical sections containing articles on theoretical analysis, neural modeling, algorithms, applications, as well as simulation and synthesis.
Author: Narendra Kumar
Publisher: Artech House
Published: 2015-06-01
Total Pages: 365
ISBN-13: 1608078329
DOWNLOAD EBOOKThis new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Author: Salma Ait Fares
Publisher: BoD – Books on Demand
Published: 2010-01-01
Total Pages: 418
ISBN-13: 9533070420
DOWNLOAD EBOOKMobile and wireless communications applications have a clear impact on improving the humanity wellbeing. From cell phones to wireless internet to home and office devices, most of the applications are converted from wired into wireless communication. Smart and advanced wireless communication environments represent the future technology and evolutionary development step in homes, hospitals, industrial, vehicular and transportation systems. A very appealing research area in these environments has been the wireless ad hoc, sensor and mesh networks. These networks rely on ultra low powered processing nodes that sense surrounding environment temperature, pressure, humidity, motion or chemical hazards, etc. Moreover, the radio frequency (RF) transceiver nodes of such networks require the design of transmitter and receiver equipped with high performance building blocks including antennas, power and low noise amplifiers, mixers and voltage controlled oscillators. Nowadays, the researchers are facing several challenges to design such building blocks while complying with ultra low power consumption, small area and high performance constraints. CMOS technology represents an excellent candidate to facilitate the integration of the whole transceiver on a single chip. However, several challenges have to be tackled while designing and using nanoscale CMOS technologies and require innovative idea from researchers and circuits designers. While major researchers and applications have been focusing on RF wireless communication, optical wireless communication based system has started to draw some attention from researchers for a terrestrial system as well as for aerial and satellite terminals. This renewed interested in optical wireless communications is driven by several advantages such as no licensing requirements policy, no RF radiation hazards, and no need to dig up roads besides its large bandwidth and low power consumption. This second part of the book, Mobile and Wireless Communications: Key Technologies and Future Applications, covers the recent development in ad hoc and sensor networks, the implementation of state of the art of wireless transceivers building blocks and recent development on optical wireless communication systems. We hope that this book will be useful for students, researchers and practitioners in their research studies.
Author: Jung-Hun Seo
Publisher: MDPI
Published: 2019-04-25
Total Pages: 138
ISBN-13: 3038978426
DOWNLOAD EBOOKWhile group IV or III-V based device technologies have reached their technical limitations (e.g., limited detection wavelength range or low power handling capability), wide bandgap (WBG) semiconductors which have band-gaps greater than 3 eV have gained significant attention in recent years as a key semiconductor material in high-performance optoelectronic and electronic devices. These WBG semiconductors have two definitive advantages for optoelectronic and electronic applications due to their large bandgap energy. WBG energy is suitable to absorb or emit ultraviolet (UV) light in optoelectronic devices. It also provides a higher electric breakdown field, which allows electronic devices to possess higher breakdown voltages. This Special Issue seeks research papers, short communications, and review articles that focus on novel synthesis, processing, designs, fabrication, and modeling of various WBG semiconductor power electronics and optoelectronic devices.