Ion Beam Etching and Reactive Ion Etching on SBN Thin Films on MgO Crystal
Author: Yoo-Mi Lee
Publisher:
Published: 1995
Total Pages: 102
ISBN-13:
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Author: Yoo-Mi Lee
Publisher:
Published: 1995
Total Pages: 102
ISBN-13:
DOWNLOAD EBOOKAuthor: William Edward Vanderlinde
Publisher:
Published: 1988
Total Pages: 392
ISBN-13:
DOWNLOAD EBOOKAuthor: Timothy John Whetten
Publisher:
Published: 1986
Total Pages: 300
ISBN-13:
DOWNLOAD EBOOKAuthor: J. Sugiura
Publisher:
Published: 1985
Total Pages: 23
ISBN-13:
DOWNLOAD EBOOKReactive ion etching (RIE) using fluorinated gases, such as admixtures of CF4 with O2 has been conducted on sputter deposited films of SiC. For comparison purposes, the same experiments with SiO2 films and Si wafers have been conducted. The influence of RF power, pressure, and O2 concentration on etch rate in CF4 + O2, SF6 + H6, and Ar gases has been investigated. RIE mechanisms were studied using in-situ monitoring of excited fluorine emission intensity and DC self bias at the lower electrode. Typical etch rates of Si, SiO2, and SiC are 1220 A/min., 600 A/min., and 375 A/min. in CF4 + 4% O2, 8850 A/min., 500 A/min., and 560 A/min. in SF6 + 50% He, and 340 A/min., 280 A/min., and 270 A/min. in Ar, respectively, at P = 200 Watts, p = 20mTorr, and 300K. Under these conditions the DC self bias levels are -396 volts for CF4 + 4% O2, -350 volts for SF6 + 50% He, and -414 volts for Ar. In both CF4 + 4% O2 and SF6 + 50% He, the etch rates of Si, SiO2, and SiC all increase monotonously with the RF power.
Author: Wen-Sen Pan
Publisher:
Published: 1988
Total Pages: 171
ISBN-13:
DOWNLOAD EBOOKAuthor: Wendi Zhang
Publisher: Forschungszentrum Jülich
Published: 2013
Total Pages: 215
ISBN-13: 3893368647
DOWNLOAD EBOOKAuthor: J. W. Coburn
Publisher:
Published: 1982
Total Pages: 104
ISBN-13:
DOWNLOAD EBOOKAuthor: James Molloy
Publisher:
Published: 1997
Total Pages:
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DOWNLOAD EBOOKAuthor: R. P. H. Chang
Publisher: Mrs Proceedings
Published: 1985-04-04
Total Pages: 552
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Shashank Chandrashekhar Deshmukh
Publisher:
Published: 1993
Total Pages: 432
ISBN-13:
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