Introduction to Modeling HBTs

Introduction to Modeling HBTs

Author: Matthias Rudolph

Publisher: Artech House Publishers

Published: 2006

Total Pages: 0

ISBN-13: 9781580531443

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Annotation Heterojunction bipolar transistors (HBTs) are high-performance transistor structures, and accurate HBT modeling is indispensable in helping engineers and designers achieve single-pass circuit design success. This first-of-its-kind guide provides complete hands-on understanding of available HBT models and the parameter strategies needed to use them effectively in circuit simulation. The book presents detailed coverage of state-of-the-art tools that help designers select the best model to meet specific design requirements, know what physical effects to expect, and modify or create new models to optimize simulation accuracy. Emphasizing "how to" procedures without getting bogged down in device physics, this indispensable guide puts the full power of active device modeling and circuit simulation at the designer's command


Nonlinear Transistor Model Parameter Extraction Techniques

Nonlinear Transistor Model Parameter Extraction Techniques

Author: Matthias Rudolph

Publisher: Cambridge University Press

Published: 2011-10-13

Total Pages: 367

ISBN-13: 1139502263

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Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.


Heterojunction Bipolar Transistors for Circuit Design

Heterojunction Bipolar Transistors for Circuit Design

Author: Jianjun Gao

Publisher: John Wiley & Sons

Published: 2015-04-27

Total Pages: 394

ISBN-13: 1118921550

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A highly comprehensive summary on circuit related modeling techniques and parameter extraction methods for heterojunction bipolar transistors Heterojunction Bipolar Transistor (HBT) is one of the most important devices for microwave applications. The book details the accurate device modeling for HBTs and high level IC design using HBTs Provides a valuable reference to basic modeling issues and specific semiconductor device models encountered in circuit simulators, with a thorough reference list at the end of each chapter for onward learning Offers an overview on modeling techniques and parameter extraction methods for heterojunction bipolar transistors focusing on circuit simulation and design Presents electrical/RF engineering-related theory and tools and include equivalent circuits and their matrix descriptions, noise, small and large signal analysis methods


Compact Hierarchical Bipolar Transistor Modeling with Hicum

Compact Hierarchical Bipolar Transistor Modeling with Hicum

Author: Michael Schr”ter

Publisher: World Scientific

Published: 2010

Total Pages: 753

ISBN-13: 981427321X

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Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.


Nonlinear Circuit Simulation and Modeling

Nonlinear Circuit Simulation and Modeling

Author: José Carlos Pedro

Publisher: Cambridge University Press

Published: 2018-06-14

Total Pages: 361

ISBN-13: 1108570348

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Discover the nonlinear methods and tools needed to design real-world microwave circuits with this tutorial guide. Balancing theoretical background with practical tools and applications, it covers everything from the basic properties of nonlinear systems such as gain compression, intermodulation and harmonic distortion, to nonlinear circuit analysis and simulation algorithms, and state-of-the-art equivalent circuit and behavioral modeling techniques. Model formulations discussed in detail include time-domain transistor compact models and frequency-domain linear and nonlinear scattering models. Learn how to apply these tools to designing real circuits with the help of a power amplifier design example, which covers all stages from active device model extraction and the selection of bias and terminations, through to performance verification. Realistic examples, illustrative insights and clearly conveyed mathematical formalism make this an essential learning aid for both professionals working in microwave and RF engineering and graduate students looking for a hands-on guide to microwave circuit design.


Compact Modeling

Compact Modeling

Author: Gennady Gildenblat

Publisher: Springer Science & Business Media

Published: 2010-06-22

Total Pages: 531

ISBN-13: 9048186145

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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.


Silicon-germanium Heterojunction Bipolar Transistors

Silicon-germanium Heterojunction Bipolar Transistors

Author: John D. Cressler

Publisher: Artech House

Published: 2003

Total Pages: 592

ISBN-13: 9781580535991

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This informative, new resource presents the first comprehensive treatment of silicon-germanium heterojunction bipolar transistors (SiGe HBTs). It offers you a complete, from-the-ground-up understanding of SiGe HBT devices and technology, from a very broad perspective. The book covers motivation, history, materials, fabrication, device physics, operational principles, and circuit-level properties associated with this new cutting-edge semiconductor device technology. Including over 400 equations and more than 300 illustrations, this hands-on reference shows you in clear and concise language how to design, simulate, fabricate, and measure a SiGe HBT.


Analysis and Simulation of Heterostructure Devices

Analysis and Simulation of Heterostructure Devices

Author: Vassil Palankovski

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 309

ISBN-13: 3709105609

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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.


Behavioral Modeling and Linearization of RF Power Amplifiers

Behavioral Modeling and Linearization of RF Power Amplifiers

Author: John Wood

Publisher: Artech House

Published: 2014-06-01

Total Pages: 379

ISBN-13: 1608071200

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Wireless voice and data communications have made great improvements, with connectivity now virtually ubiquitous. Users are demanding essentially perfect transmission and reception of voice and data. The infrastructure that supports this wide connectivity and nearly error-free delivery of information is complex, costly, and continually being improved. This resource describes the mathematical methods and practical implementations of linearization techniques for RF power amplifiers for mobile communications. This includes a review of RF power amplifier design for high efficiency operation. Readers are also provided with mathematical approaches to modeling nonlinear dynamical systems, which can be applied in the context of modeling the PA for identification in a pre-distortion system. This book also describes typical approaches to linearization and digital pre-distortion that are used in practice.


Microwave and RF Semiconductor Control Device Modeling

Microwave and RF Semiconductor Control Device Modeling

Author: Robert H. Caverly

Publisher: Artech House

Published: 2016-02-01

Total Pages: 285

ISBN-13: 1630810223

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This comprehensive new resource presents a detailed look at the modeling and simulation of microwave semiconductor control devices and circuits. Fundamental PIN, MOSFET, and MESFET nonlinear device modeling are discussed, including the analysis of transient and harmonic behavior. Considering various control circuit topologies, the book analyzes a wide range of models, from simple approximations, to sophisticated analytical approaches. Readers find clear examples that provide guidance in how to use specific modeling techniques for their challenging projects in the field. Numerous illustrations help practitioners better understand important device and circuit behavior, revealing the relationship between key parameters and results. This authoritative volume covers basic and complex mathematical models for the most common semiconductor control elements used in today’s microwave and RF circuits and systems.