Introduction to Magnetic Random-Access Memory
Introduction to Magnetic Random-Access Memory

Author: Bernard Dieny

Publisher: John Wiley & Sons

Published: 2016-11-14

Total Pages: 264

ISBN-13: 1119079357

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Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Introduction to Magnetic Random-Access Memory
Introduction to Magnetic Random-Access Memory

Author: Bernard Dieny

Publisher: John Wiley & Sons

Published: 2016-12-12

Total Pages: 277

ISBN-13: 111900974X

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Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science. This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.

Magnetic Memory Technology
Magnetic Memory Technology

Author: Denny D. Tang

Publisher: John Wiley & Sons

Published: 2021-01-07

Total Pages: 352

ISBN-13: 1119562236

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STAY UP TO DATE ON THE STATE OF MRAM TECHNOLOGY AND ITS APPLICATIONS WITH THIS COMPREHENSIVE RESOURCE Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond delivers a combination of foundational and advanced treatments of the subjects necessary for students and professionals to fully understand MRAM and other non-volatile memories, like PCM, and ReRAM. The authors offer readers a thorough introduction to the fundamentals of magnetism and electron spin, as well as a comprehensive analysis of the physics of magnetic tunnel junction (MTJ) devices as it relates to memory applications. This book explores MRAM's unique ability to provide memory without requiring the atoms inside the device to move when switching states. The resulting power savings and reliability are what give MRAM its extraordinary potential. The authors describe the current state of academic research in MRAM technology, which focuses on the reduction of the amount of energy needed to reorient magnetization. Among other topics, readers will benefit from the book's discussions of: An introduction to basic electromagnetism, including the fundamentals of magnetic force and other concepts An thorough description of magnetism and magnetic materials, including the classification and properties of magnetic thin film properties and their material preparation and characterization A comprehensive description of Giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices and their equivalent electrical model Spin current and spin dynamics, including the properties of spin current, the Ordinary Hall Effect, the Anomalous Hall Effect, and the spin Hall effect Different categories of magnetic random-access memory, including field-write mode MRAM, Spin-Torque-Transfer (STT) MRAM, Spin-Orbit Torque (SOT) MRAM, and others Perfect for senior undergraduate and graduate students studying electrical engineering, similar programs, or courses on topics like spintronics, Magnetic Memory Technology: Spin-Transfer-Torque MRAM and Beyond also belongs on the bookshelves of engineers and other professionals involved in the design, development, and manufacture of MRAM technologies.

Handbook of Spintronics
Handbook of Spintronics

Author: Yongbing Xu

Publisher: Springer

Published: 2015-10-14

Total Pages: 0

ISBN-13: 9789400768918

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Over two volumes and 1500 pages, the Handbook of Spintronics will cover all aspects of spintronics science and technology, including fundamental physics, materials properties and processing, established and emerging device technology and applications. Comprising 60 chapters from a large international team of leading researchers across academia and industry, the Handbook provides readers with an up-to-date and comprehensive review of this dynamic field of research. The opening chapters focus on the fundamental physical principles of spintronics in metals and semiconductors, including an introduction to spin quantum computing. Materials systems are then considered, with sections on metallic thin films and multilayers, magnetic tunnelling structures, hybrids, magnetic semiconductors and molecular spintronic materials. A separate section reviews the various characterisation methods appropriate to spintronics materials, including STM, spin-polarised photoemission, x-ray diffraction techniques and spin-polarised SEM. The third part of the Handbook contains chapters on the state of the art in device technology and applications, including spin valves, GMR and MTJ devices, MRAM technology, spin transistors and spin logic devices, spin torque devices, spin pumping and spin dynamics and other topics such as spin caloritronics. Each chapter considers the challenges faced by researchers in that area and contains some indications of the direction that future work in the field is likely to take. This reference work will be an essential and long-standing resource for the spintronics community.

Spin Dynamics and Damping in Ferromagnetic Thin Films and Nanostructures
Spin Dynamics and Damping in Ferromagnetic Thin Films and Nanostructures

Author: Anjan Barman

Publisher: Springer

Published: 2017-12-27

Total Pages: 166

ISBN-13: 3319662961

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This book provides a comprehensive overview of the latest developments in the field of spin dynamics and magnetic damping. It discusses the various ways to tune damping, specifically, dynamic and static control in a ferromagnetic layer/heavy metal layer. In addition, it addresses all optical detection techniques for the investigation of modulation of damping, for example, the time-resolved magneto-optical Kerr effect technique.

Emerging Non-Volatile Memories
Emerging Non-Volatile Memories

Author: Seungbum Hong

Publisher: Springer

Published: 2014-11-18

Total Pages: 280

ISBN-13: 1489975373

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This book is an introduction to the fundamentals of emerging non-volatile memories and provides an overview of future trends in the field. Readers will find coverage of seven important memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), Multiferroic RAM (MFRAM), Phase-Change Memories (PCM), Oxide-based Resistive RAM (RRAM), Probe Storage, and Polymer Memories. Chapters are structured to reflect diffusions and clashes between different topics. Emerging Non-Volatile Memories is an ideal book for graduate students, faculty, and professionals working in the area of non-volatile memory. This book also: Covers key memory technologies, including Ferroelectric Random Access Memory (FeRAM), Ferromagnetic RAM (FMRAM), and Multiferroic RAM (MFRAM), among others. Provides an overview of non-volatile memory fundamentals. Broadens readers’ understanding of future trends in non-volatile memories.

Introduction to Logic Circuits & Logic Design with Verilog
Introduction to Logic Circuits & Logic Design with Verilog

Author: Brock J. LaMeres

Publisher: Springer

Published: 2017-04-17

Total Pages: 468

ISBN-13: 3319538837

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This textbook for courses in Digital Systems Design introduces students to the fundamental hardware used in modern computers. Coverage includes both the classical approach to digital system design (i.e., pen and paper) in addition to the modern hardware description language (HDL) design approach (computer-based). Using this textbook enables readers to design digital systems using the modern HDL approach, but they have a broad foundation of knowledge of the underlying hardware and theory of their designs. This book is designed to match the way the material is actually taught in the classroom. Topics are presented in a manner which builds foundational knowledge before moving onto advanced topics. The author has designed the presentation with learning Goals and assessment at its core. Each section addresses a specific learning outcome that the student should be able to “do” after its completion. The concept checks and exercise problems provide a rich set of assessment tools to measure student performance on each outcome.

Data Storage at the Nanoscale
Data Storage at the Nanoscale

Author: Gan Fuxi

Publisher: CRC Press

Published: 2015-02-09

Total Pages: 730

ISBN-13: 9814613207

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In the big data era, data storage is one of the cores in the whole information chain, which includes production, transfer, sharing, and finally processing. Over the years, the growth of data volume has been explosive. Today, various storage services need memories with higher density and capacity. Moreover, information storage in the big data applic

Nanoelectronics and Information Technology
Nanoelectronics and Information Technology

Author: Rainer Waser

Publisher: John Wiley & Sons

Published: 2012-05-29

Total Pages: 1041

ISBN-13: 3527409270

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Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.

Advances in Non-volatile Memory and Storage Technology
Advances in Non-volatile Memory and Storage Technology

Author: Yoshio Nishi

Publisher: Elsevier

Published: 2014-06-24

Total Pages: 456

ISBN-13: 0857098098

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New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular at the fabrication, properties, and performance of nanowire phase change memory technologies. Later chapters also consider modeling of both metal oxide and resistive random access memory switching mechanisms, as well as conductive bridge random access memory technologies. Finally, part three looks to the future of alternative technologies. The areas covered include molecular, polymer, and hybrid organic memory devices, and a variety of random access memory devices such as nano-electromechanical, ferroelectric, and spin-transfer-torque magnetoresistive devices. Advances in Non-volatile Memory and Storage Technology is a key resource for postgraduate students and academic researchers in physics, materials science, and electrical engineering. It is a valuable tool for research and development managers concerned with electronics, semiconductors, nanotechnology, solid-state memories, magnetic materials, organic materials, and portable electronic devices. - Provides an overview of developing nonvolatile memory and storage technologies and explores their strengths and weaknesses - Examines improvements to flash technology, charge trapping, and resistive random access memory - Discusses emerging devices such as those based on polymer and molecular electronics, and nanoelectromechanical random access memory (RAM)