This book contains four parts. The first one is dedicated to concepts. It starts with the definitions and examples of what is piezo-pyro and ferroelectricity by considering the symmetry of the material. Thereafter, these properties are described within the framework of Thermodynamics. The second part described the way to integrate these materials in Microsystems. The third part is dedicated to characterization: composition, structure and a special focused on electrical behaviors. The last part gives a survey of state of the art applications using integrated piezo or/and ferroelectric films.
The aim of this book is to present in one volume some of the most significant developments that have taken place in the field of integrated ferroelectrics during the last decade of the twentieth century. The book begins with a comprehensive introduction to integrated ferroelectrics and follows with fifty-three papers selected by Carlos Paz de Araujo, Orlando Auciello, Ramamoorthy Ramesh, and George W. Taylor. These fifty-three papers were selected from more than one thousand papers published over the last eleven years in the proceedings of the International Symposia on Integrated Ferroelectrics (ISIF). These papers were chosen on the basis that they (a) give a broad view of the advances that have been made and (b) indicate the future direction of research and technological development. Readers who wish for a more in-depth treatment of the subject are encouraged to refer to volumes 1 to 27 of Integrated Ferroelectrics, the main publication vehicle for papers in this field.
Ferroelectricity is one of the most studied phenomena in the scientific community due the importance of ferroelectric materials in a wide range of applications including high dielectric constant capacitors, pyroelectric devices, transducers for medical diagnostic, piezoelectric sonars, electrooptic light valves, electromechanical transducers and ferroelectric random access memories. Actually the ferroelectricity at nanoscale receives a great attention to the development of new technologies. The demand for ferroelectric systems with specific applications enforced the in-depth research in addition to the improvement of processing and characterization techniques. This book contains twenty two chapters and offers an up-to-date view of recent research into ferroelectricity. The chapters cover various formulations, their forms (bulk, thin films, ferroelectric liquid crystals), fabrication, properties, theoretical topics and ferroelectricity at nanoscale.
Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.
Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face
The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis of thin film ferroelectric materials and their basic properties. Because it is a basic introduction to the chemistry, materials science, processing, and physics of the materials from which integrated ferroelectrics are made, newcomers to this field as well as veterans will find this book self-contained and invaluable in acquiring the diverse elements requisite to success in their work in this area. It is directed at electronic engineers and physicists as well as process and system engineers, ceramicists, and chemists involved in the research, design, development, manufacturing, and utilization of thin film ferroelectric materials.
The field of materials and process integration for MEMS research has an extensive past as well as a long and promising future. Researchers, academicians and engineers from around the world are increasingly devoting their efforts on the materials and process integration issues and opportunities in MEMS devices. These efforts are crucial to sustain the long-term growth of the MEMS field. The commercial MEMS community is heavily driven by the push for profitable and sustainable products. In the course of establishing high volume and low-cost production processes, the critical importance of materials properties, behaviors, reliability, reproducibility, and predictability, as well as process integration of compatible materials systems become apparent. Although standard IC fabrication steps, particularly lithographic techniques, are leveraged heavily in the creation of MEMS devices, additional customized and novel micromachining techniques are needed to develop sophisticated MEMS structures. One of the most common techniques is bulk micromachining, by which micromechanical structures are created by etching into the bulk of the substrates with either anisotropic etching with strong alk:ali solution or deep reactive-ion etching (DRIB). The second common technique is surface micromachining, by which planar microstructures are created by sequential deposition and etching of thin films on the surface of the substrate, followed by a fmal removal of sacrificial layers to release suspended structures. Other techniques include deep lithography and plating to create metal structures with high aspect ratios (LIGA), micro electrodischarge machining (J.
The transformation of vibrations into electric energy through the use of piezoelectric devices is an exciting and rapidly developing area of research with a widening range of applications constantly materialising. With Piezoelectric Energy Harvesting, world-leading researchers provide a timely and comprehensive coverage of the electromechanical modelling and applications of piezoelectric energy harvesters. They present principal modelling approaches, synthesizing fundamental material related to mechanical, aerospace, civil, electrical and materials engineering disciplines for vibration-based energy harvesting using piezoelectric transduction. Piezoelectric Energy Harvesting provides the first comprehensive treatment of distributed-parameter electromechanical modelling for piezoelectric energy harvesting with extensive case studies including experimental validations, and is the first book to address modelling of various forms of excitation in piezoelectric energy harvesting, ranging from airflow excitation to moving loads, thus ensuring its relevance to engineers in fields as disparate as aerospace engineering and civil engineering. Coverage includes: Analytical and approximate analytical distributed-parameter electromechanical models with illustrative theoretical case studies as well as extensive experimental validations Several problems of piezoelectric energy harvesting ranging from simple harmonic excitation to random vibrations Details of introducing and modelling piezoelectric coupling for various problems Modelling and exploiting nonlinear dynamics for performance enhancement, supported with experimental verifications Applications ranging from moving load excitation of slender bridges to airflow excitation of aeroelastic sections A review of standard nonlinear energy harvesting circuits with modelling aspects.
Ferroelectric (FE) ceramics with a large relative dielectric permittivity and a high dielectric strength have the potential to store or supply electricity of very high energy and power densities, which is desirable in many modern electronic and electrical systems. For a given FE material, such as the commonly-used BaTiO3, a close interplay between defect chemistry, misfit strain, and grain characteristics must be carefully manipulated for engineering its film capacitors. In this work, the effects of grain orientation and morphology on the energy storage properties of BaTiO3 thick films were systematically investigated. These films were all deposited on Si at 500 °C in an oxygen-rich atmosphere, and their thicknesses varied between ~500 nm and ~2.6 μm. While a columnar nanograined BaTiO3 film with a (001) texture showed a higher recyclable energy density Wrec (81.0 J/cm3vs. 57.1 J/[email protected] MV/cm, ~40% increase) than that of a randomly-oriented BaTiO3 film of about the same thickness (~500 nm), the latter showed an improved energy density at a reduced electric field with an increasing film thickness. Specifically, for the 1.3 μm and 2.6 μm thick polycrystalline films, their energy storage densities Wrec reached 46.6 J/cm3 and 48.8 J/cm3 at an applied electric field of 2.31 MV/cm (300 V on 1.3 μm film) and 1.77 MV/cm (460 V on 2.6 μm film), respectively. This ramp-up in energy density can be attributed to increased polarizability with a growing grain size in thicker polycrystalline films and is desirable in high pulse power applications.
Combining both fundamental principles and real-life applications in a single volume, this book discusses the latest research results in ferroelectrics, including many new ferroelectric materials for the latest technologies, such as capacitors, transducers and memories. The first two chapters introduce dielectrics and microscopic materials properties, while the following chapter discusses pyroelectricity and piezoelectricity. The larger part of the text is devoted to ferroelectricity and ferroelectric ceramics, with not only their fundamentals but also applications discussed. The book concludes with a look at the future for laser printed materials and applications. With over 600 references to recent publications on piezoelectric and ferroelectric materials, this is an invaluable reference for physicists, materials scientists and engineers.
