Infrared and Terahertz Detectors, Third Edition

Infrared and Terahertz Detectors, Third Edition

Author: Antoni Rogalski

Publisher: CRC Press

Published: 2019-01-10

Total Pages: 1044

ISBN-13: 1351984764

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This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.


The Last Thirty Seconds

The Last Thirty Seconds

Author: David K. Stumpf

Publisher: University of Arkansas Press

Published: 2024-09-09

Total Pages: 202

ISBN-13: 1610758250

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In March 1983, as the world’s superpowers continued aggressively stockpiling nuclear weapons, President Ronald Reagan described his vision for a world no longer confronted with the concept of mutually assured destruction. A year later the Strategic Defense Initiative was established, followed soon after by the creation of the Strategic Defense Initiative Organization (SDIO). The SDIO was tasked with the development and coordination of missile technologies designed for the strategic defense against civilization’s most dangerous invention, one that carried with it the threat of nuclear destruction—intercontinental ballistic missiles. In The Last Thirty Seconds: A Brief History of the Evolution of Hit-to-Kill Technology, David K. Stumpf details the development of one of many possible solutions for ballistic missile defense commonly known as hit-to-kill. Hit-to-kill is a nonnuclear technique using kinetic energy, rather than explosives, to destroy reentry vehicles carrying chemical, biological, or nuclear warheads. It is the centerpiece of the United States’ current ballistic missile defense systems and has proven invaluable in the conflict between Ukraine and Russia as well as in the ongoing conflict with the Houthi rebels in the Red Sea. While much of the subject remains classified, this detailed study will be welcomed for its substantial references and the inclusion of newly declassified material.


Two-dimensional Materials for Photodetector

Two-dimensional Materials for Photodetector

Author: Pramoda Kumar Nayak

Publisher: BoD – Books on Demand

Published: 2018-04-04

Total Pages: 244

ISBN-13: 9535139517

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Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.


Mercury Cadmium Telluride

Mercury Cadmium Telluride

Author: Peter Capper

Publisher: John Wiley & Sons

Published: 2011-06-20

Total Pages: 610

ISBN-13: 1119957575

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Mercury cadmium telluride (MCT) is the third most well-regarded semiconductor after silicon and gallium arsenide and is the material of choice for use in infrared sensing and imaging. The reason for this is that MCT can be ‘tuned’ to the desired IR wavelength by varying the cadmium concentration. Mercury Cadmium Telluride: Growth, Properties and Applications provides both an introduction for newcomers, and a comprehensive review of this fascinating material. Part One discusses the history and current status of both bulk and epitaxial growth techniques, Part Two is concerned with the wide range of properties of MCT, and Part Three covers the various device types that have been developed using MCT. Each chapter opens with some historical background and theory before presenting current research. Coverage includes: Bulk growth and properties of MCT and CdZnTe for MCT epitaxial growth Liquid phase epitaxy (LPE) growth Metal-organic vapour phase epitaxy (MOVPE) Molecular beam epitaxy (MBE) Alternative substrates Mechanical, thermal and optical properties of MCT Defects, diffusion, doping and annealing Dry device processing Photoconductive and photovoltaic detectors Avalanche photodiode detectors Room-temperature IR detectors


Silicon Photonics for High-Performance Computing and Beyond

Silicon Photonics for High-Performance Computing and Beyond

Author: Mahdi Nikdast

Publisher: CRC Press

Published: 2021-11-16

Total Pages: 391

ISBN-13: 1000480143

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Silicon photonics is beginning to play an important role in driving innovations in communication and computation for an increasing number of applications, from health care and biomedical sensors to autonomous driving, datacenter networking, and security. In recent years, there has been a significant amount of effort in industry and academia to innovate, design, develop, analyze, optimize, and fabricate systems employing silicon photonics, shaping the future of not only Datacom and telecom technology but also high-performance computing and emerging computing paradigms, such as optical computing and artificial intelligence. Different from existing books in this area, Silicon Photonics for High-Performance Computing and Beyond presents a comprehensive overview of the current state-of-the-art technology and research achievements in applying silicon photonics for communication and computation. It focuses on various design, development, and integration challenges, reviews the latest advances spanning materials, devices, circuits, systems, and applications. Technical topics discussed in the book include: • Requirements and the latest advances in high-performance computing systems • Device- and system-level challenges and latest improvements to deploy silicon photonics in computing systems • Novel design solutions and design automation techniques for silicon photonic integrated circuits • Novel materials, devices, and photonic integrated circuits on silicon • Emerging computing technologies and applications based on silicon photonics Silicon Photonics for High-Performance Computing and Beyond presents a compilation of 19 outstanding contributions from academic and industry pioneers in the field. The selected contributions present insightful discussions and innovative approaches to understand current and future bottlenecks in high-performance computing systems and traditional computing platforms, and the promise of silicon photonics to address those challenges. It is ideal for researchers and engineers working in the photonics, electrical, and computer engineering industries as well as academic researchers and graduate students (M.S. and Ph.D.) in computer science and engineering, electronic and electrical engineering, applied physics, photonics, and optics.


Molecular Beam Epitaxy

Molecular Beam Epitaxy

Author: Hajime Asahi

Publisher: John Wiley & Sons

Published: 2019-02-01

Total Pages: 694

ISBN-13: 1119355028

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Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.


Studies on Selected Topics in Radio Frequency Digital-to-Analog Converters

Studies on Selected Topics in Radio Frequency Digital-to-Analog Converters

Author: Mohammad Reza Sadeghifar

Publisher: Linköping University Electronic Press

Published: 2019-10-14

Total Pages: 137

ISBN-13: 9176850307

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The network latency in fifth generation mobile technology (5G) will be around one millisecond which is much lower than in 4G technology. This significantly faster response time together with higher information capacity and ultra-reliable communication in 5G technology will pave the way for future innovations in a smart and connected society. This new 5G network should be built on a reasonable wireless infrastructure and 5G radio base-stations that can be vastly deployed. That is, while the electrical specification of a radio base-station in 5G should be met in order to have the network functioning, the size, weight and power consumption of the radio system should be optimized to be able to commercially deploy these radios in a huge network. As the number of antenna elements increases in massive multiple-input multiple-output based radios such as in 5G, designing true multi-band base-station radios, with efficient physical size, power consumption and cost in emerging cellular bands especially in mid-bands (frequencies up to 10~GHz), is becoming a challenge. This demands a hard integration of radio components; particularly the radio's digital application-specific integrated circuits (ASIC) with high-performance energy-efficient multi-band data converters. In this dissertation radio frequency digital-to-analog converter (RF DAC) and semi-digital finite-impulse response (FIR) filter digital-to-analog converter has been studied. Different techniques are used in these structures to improve the transmitter's overall performance. In the RF DAC part, a radio frequency digital-to-analog converter solution is presented, which is capable of monolithic integration into today's digital ASIC due to its digital-in-nature architecture, while fulfills the stringent requirements of cellular network radio base station linearity and bandwidth. A voltage-mode conversion method is used as output stage, and configurable mixing logic is employed in the data path to create a higher frequency lobe and utilize the output signal in the first or the second Nyquist zone and hence achieving output frequencies up to the sample rate. In the semi-digital FIR part, optimization problem formulation for semi-digital FIR digital-to-analog converter is investigated. Magnitude and energy metrics with variable coefficient precision are defined for cascaded digital Sigma-Delta modulators, semi-digital FIR filter, and Sinc roll-off frequency response of the DAC. A set of analog metrics as hardware cost is also defined to be included in semi-digital FIR DAC optimization problem formulation. It is shown that hardware cost of the semi-digital FIR DAC, can be reduced by introducing flexible coefficient precision in filter optimization while the semi-digital FIR DAC is not over-designed either. Different use cases are selected to demonstrate the optimization problem formulations. A combination of magnitude metric, energy metric, coefficient precision and analog metric are used in different use cases of the optimization problem formulation and solved to find out the optimum set of analog FIR taps. Moreover, a direct digital-to-RF converter (DRFC) is presented in this thesis where a semi-digital FIR topology utilizes voltage-mode RF DAC cells to synthesize spectrally clean signals at RF frequencies. Due to its digital-in-nature design, the DRFC benefits from technology scaling and can be monolithically integrated into advance digital VLSI systems. A fourth-order single-bit quantizer bandpass digital Sigma-Delta modulator is used preceding the DRFC, resulting in a high in-band signal-to-noise ratio (SNR). The out-of-band spectrally-shaped quantization noise is attenuated by an embedded semi-digital FIR filter. The RF output frequencies are synthesized by a configurable voltage-mode RF DAC solution with a high linearity performance. A compensation technique to cancel the code-dependent supply current variation in voltage-mode RF DAC for radio frequency direct digital frequency synthesizer is also presented in this dissertation and is studied analytically. The voltage-mode RF DAC and the compensation technique are mathematically modeled and system-level simulation is performed to support the analytical discussion.


Infrared Thermal Imaging

Infrared Thermal Imaging

Author: Michael Vollmer

Publisher: John Wiley & Sons

Published: 2018-02-20

Total Pages: 803

ISBN-13: 3527413510

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This new up-to-date edition of the successful handbook and ready reference retains the proven concept of the first, covering basic and advanced methods and applications in infrared imaging from two leading expert authors in the field. All chapters have been completely revised and expanded and a new chapter has been added to reflect recent developments in the field and report on the progress made within the last decade. In addition there is now an even stronger focus on real-life examples, with 20% more case studies taken from science and industry. For ease of comprehension the text is backed by more than 590 images which include graphic visualizations and more than 300 infrared thermography figures. The latter include many new ones depicting, for example, spectacular views of phenomena in nature, sports, and daily life.