Infrared Applications of Semiconductors III
Author: Mahmoud Omar Manasreh
Publisher:
Published: 2000
Total Pages: 568
ISBN-13:
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Mid-infrared Semiconductor Optoelectronics
Author: Anthony Krier
Publisher: Springer
Published: 2007-05-22
Total Pages: 756
ISBN-13: 1846282098
DOWNLOAD EBOOKOptoelectronic devices operating in the mid-infrared wavelength range offer applications in a variety of areas from environmental gas monitoring around oil rigs to the detection of narcotics. They could also be used for free-space optical communications, thermal imaging applications and the development of "homeland security" measures. Mid-infrared Semiconductor Optoelectronics is an overview of the current status and technological development in this rapidly emerging area; the basic physics, some of the problems facing the design engineer and a comparison of possible solutions are laid out; the different lasers used as sources for mid-infrared technology are considered; recent work in detectors is reviewed; the last part of the book is concerned with applications. With a world-wide authorship of experts working in many mid-infrared-related fields this book will be an invaluable reference for researchers and graduate students drawn from physics, electronic and electrical engineering and materials science.
Infrared Applications of Semiconductors II: Volume 484
Author: Donald L. McDaniel
Publisher:
Published: 1998-04-20
Total Pages: 720
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Infrared Applications of Semiconductors
Author:
Publisher:
Published: 2000
Total Pages: 570
ISBN-13:
DOWNLOAD EBOOKLong-Wavelength Infrared Semiconductor Lasers
Author: Hong K. Choi
Publisher: John Wiley & Sons
Published: 2004-03-18
Total Pages: 418
ISBN-13: 9780471392002
DOWNLOAD EBOOKLong-wavelength Infrared Semiconductor Lasers provides a comprehensive review of the current status of semiconductor coherent sources emitting in the mid-to far-infrared spectrum and their applications. It includes three topics not covered in any previous book: far-infrared emission from photo-mixers as well as from hot-hole lasers, and InP-based lasers emitting beyond two micrometers. Semiconductor lasers emitting at more than two micrometers have many applications such as in trace gas analysis, environmental monitoring, and industrial process control. Because of very rapid progress in recent years, until this book no comprehensive information beyond scattered journal articles is available at present.
Infrared Applications of Semiconductors: Volume 450
Author: M. Omar Manasreh
Publisher:
Published: 1997-03-17
Total Pages: 512
ISBN-13:
DOWNLOAD EBOOKThis book is unique in that it combines for the first time the infrared detectors and infrared lasers and emitters in one volume. It is merely a step, however, in a very fast-changing field, toward achieving an understanding of novel structures that can be used for high-performance infrared detectors, imaging arrays, infrared lasers and sources. Internationally-known experts discuss recent advances in materials structures, processing and device performances, with presentations crossing materials and discipline boundaries. Recent investigations based on III-V, II-VI and IV bulk semiconductors, quantum wells, and superlattices for long-wavelength infrared detectors, emitters, sources and materials are featured. Topics include: antimonide-related materials and devices; quantum wells and devices; quantum infrared detectors; HgCdTe - materials, devices and processing; nonlinear and parametric oscillator material; interdiffusion in heterostructures and related topics.
Molecular Beam Epitaxy
Author: Hajime Asahi
Publisher: John Wiley & Sons
Published: 2019-04-15
Total Pages: 510
ISBN-13: 111935501X
DOWNLOAD EBOOKCovers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.
III-V Semiconductor Photodetectors for Infrared Applications
Author: Hui Shao
Publisher:
Published: 2007
Total Pages: 118
ISBN-13: 9781109874815
DOWNLOAD EBOOKChapter 2 and 3 discuss two infrared heterojunction photodiodes at room temperature. Chapter 2 studies an InGaAsSb photodiode with a high detectivity and a 50% cutoff wavelength at 2.6mum. Chapter 3 describes a non-cryogenic InAsSb photodiode with a 50% cutoff wavelength at 4.3mum.
Infrared Applications of Semiconductors II: Symposium Held in Boston, Massachusetts on December 1-4, 1997
Author: McDaniel Pachavis (Donald)
Publisher:
Published: 1997
Total Pages: 679
ISBN-13:
DOWNLOAD EBOOKA variety of semiconductor materials have been used to fabricate diode lasers for the mid-infrared. Lasers using the lead salts (e.g., PbSnTe) have been commercially available for sometime. Mid-infrared emitting III-V semiconductors (e.g., InGaAsSb) have superior thermal conductivity, and diode lasers fabricated from these material offer higher powers, of particular interest are the III-V semiconductor laser based on type-II superlattices (e.g., InAs/GaInSb). Among the many unique properties attributed to type-II superlattices are small hole mass, reduced Auger recombination, and less inter-valence band absorption-all important for better lasers. Recent results with Quantum Cascade-type lasers are also very encouraging. This paper summarizes the important semiconductor materials for mid-infrared lasers with emphasis on the type-II superlattices.
Infrared Ellipsometry on Semiconductor Layer Structures
Author: Mathias Schubert
Publisher: Springer Science & Business Media
Published: 2004-11-26
Total Pages: 216
ISBN-13: 9783540232490
DOWNLOAD EBOOKThe study of semiconductor-layer structures using infrared ellipsometry is a rapidly growing field within optical spectroscopy. This book offers basic insights into the concepts of phonons, plasmons and polaritons, and the infrared dielectric function of semiconductors in layered structures. It describes how strain, composition, and the state of the atomic order within complex layer structures of multinary alloys can be determined from an infrared ellipsometry examination. Special emphasis is given to free-charge-carrier properties, and magneto-optical effects. A broad range of experimental examples are described, including multinary alloys of zincblende and wurtzite structure semiconductor materials, and future applications such as organic layer structures and highly correlated electron systems are proposed.
