Infrared Detectors and Emitters: Materials and Devices
Infrared Detectors and Emitters: Materials and Devices

Author: Peter Capper

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 500

ISBN-13: 1461516072

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An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.

Applications of Synchrotron Radiation Techniques to Materials Science IV: Volume 524
Applications of Synchrotron Radiation Techniques to Materials Science IV: Volume 524

Author: Susan M. Mini

Publisher:

Published: 1998-08-17

Total Pages: 408

ISBN-13:

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The 57 papers update the status of characterization techniques that use synchrotron radiation since the previous symposium on the subject in the spring of 1996. The techniques considered include X-ray absorption and scattering, imaging, tomography, microscopy, and topographic methods. Among the materials are surfaces, interfaces, electronic materials, metal oxides, solar cells, thin films, carbides, polymers, alloys, nanoparticles, and graphitic materials. Some of the papers are doubled spaced. Annotation copyrighted by Book News, Inc., Portland, OR

Semiconductors for Room-Temperature Radiation Detector Applications II: Volume 487
Semiconductors for Room-Temperature Radiation Detector Applications II: Volume 487

Author: R. B. James

Publisher:

Published: 1997

Total Pages: 696

ISBN-13:

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Contains papers from a December 1997 symposium on semiconductor radiation detectors for use in the energy range of a few eV to about 5 MeV. Primary emphasis is on developing semiconductor X-ray and gamma- ray detectors and imagers which combine the advantages of room- temperature operation with the excellent energy resolution of cryogenically cooled spectrometers. Papers are arranged in sections on cadmium zinc telluride growth, material properties, detectors, and systems; mercury and lead iodide materials, detectors, and systems; Group IV and III-V materials, detectors, and systems; ZnSe and ZnS materials and detectors; analysis and characteristics of detectors, systems, and applications; and IR materials and detectors. Annotation copyrighted by Book News, Inc., Portland, OR

Semiconductor Process and Device Performance Modelling: Volume 490
Semiconductor Process and Device Performance Modelling: Volume 490

Author: Scott T. Dunham

Publisher:

Published: 1998-10-02

Total Pages: 296

ISBN-13:

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Highlights recent advances in technology computer-aided design (TCAD) and identifies critical areas for future emphasis. The 39 contributions from the December 1997 symposium cover four main topics--bulk process modeling, equipment modeling, topography modeling, and characterization and device modeling. Paper topics include arsenic deactivation in silicon; defect reactions induced by reactive ion etching; optimization of AMT barrel reactors for silicon epitaxy; grain structure evolution and the reliability of Al(Cu) thin film interconnects; and improved quantitative mobility spectrum analysis. Annotation copyrighted by Book News, Inc., Portland, OR