Optical Absorption of Impurities and Defects in Semiconducting Crystals

Optical Absorption of Impurities and Defects in Semiconducting Crystals

Author: Bernard Pajot

Publisher: Springer Science & Business Media

Published: 2012-08-28

Total Pages: 532

ISBN-13: 3642180183

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This book outlines, with the help of several specific examples, the important role played by absorption spectroscopy in the investigation of deep-level centers introduced in semiconductors and insulators like diamond, silicon, germanium and gallium arsenide by high-energy irradiation, residual impurities, and defects produced during crystal growth. It also describes the crucial role played by vibrational spectroscopy to determine the atomic structure and symmetry of complexes associated with light impurities like hydrogen, carbon, nitrogen and oxygen, and as a tool for quantitative analysis of these elements in the materials.


Deep Centers in Semiconductors

Deep Centers in Semiconductors

Author: Sokrates T. Pantelides

Publisher: CRC Press

Published: 1992-11-30

Total Pages: 952

ISBN-13: 9782881245626

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Examines several key semiconductor deep centers, all carefully chosen to illustrate a variety of essential concepts. A deep center is a lattice defect or impurity that causes very localized bound states and energies deep in the band gap. For each deep center chosen, a scientist instrumental in its development discusses the theoretical and experimental techniques used to understand that center. The second edition contains four new sections treating recent developments, including a chapter on hydrogen in crystalline semiconductors. Annotation copyright by Book News, Inc., Portland, OR


Defects and Their Structure in Nonmetallic Solids

Defects and Their Structure in Nonmetallic Solids

Author: B. Henderson

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 502

ISBN-13: 1468428020

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The Advanced Study Institute of which this volume is the proceedings was held at the University of Exeter during 24 August to 6 September 1975. There were seventy participants of whom eighteen were lecturers and members of the advisory committee. All NATO countries except Holland, Iceland and Portugal were re presented. In addition a small number of participants came from non-NATO countries Japan, Ireland and Switzerland. An aim of the organising committee was to bring together scientists of wide interests and expertise in the defect structure of insulators and semiconductors. Thus major emphases in the pro gramme concerned the use of spectroscopy and microscopy in revealing the structure of point defects and their aggregates, line defects as well as planar and volume defects. The lectures revealed that in general little is known of the fate of the interstitial in most irradiated solids. Nor are the dynamic properties of defects under stood in sufficient detail that one can state how point defects cluster and eventually become macroscopic defects. Although this book faithfully reproduces the material covered by the invited speakers, it does not really follow the flow of the lectures. This is because it seemed advisable for each lecturer to provide a single self-contained and authoritative manuscript, rather than a series of short articles corresponding to the lectures.