Influence of Static Magnetic Fields and Solutal Buoyancy on Silicon Dissolution Into Germanium Melt

Influence of Static Magnetic Fields and Solutal Buoyancy on Silicon Dissolution Into Germanium Melt

Author:

Publisher:

Published: 2009

Total Pages:

ISBN-13:

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Elemental semiconductors like silicon and germanium have been used since the beginning of the electronics industry. Silicon has dominated research and production and thus silicon based devices can be produced at the lowest cost using the most mature technology. While dopants can be used to tailor the electric properties of the semiconductor within certain limits, more flexibility is gained using compound semiconductors such as silicon-germanium. The electric properties of a compound semiconductor are highly dependant on the composition, which in turn is influenced by the dissolution reaction and flow characteristics during the growth process. Liquid phase diffusion (LPD) is a solution growth technique that has been proposed to grow silicon-germanium seed crystals for other growth techniques. The dissolution of silicon is a limiting factor for the growth rate in LPD and also Bridgman growth techniques. Investigation of the dissolution process is aimed at increasing the growth rate while still maintaining maximum uniformity of the crystal composition. To accomplish this, a static magnetic field was utilized in experiments done by Armour. The experimental results showed that a top seeded configuration without magnetic fields leads to a diffusion driven process and homogeneous dissolution, while the addition of a strong 0.8 Tesla magnetic field resulted in non-uniform and slightly increased dissolution. This work is complementary to the experimental investigation and aims to help understand the influence of magnetic fields on silicon dissolution. For this work, an OpenFOAM magnetohydrodynamics application including heat and species transport and three different magnetic force models has been developed and validated. The simulations done show that an isothermal state is reached within 90 seconds if no temperature gradient is imposed. Additional simulations with a temperature gradient helped to rule out a possible thermal leak in the experimental system, confirming that i.


Influence of Static Magnetic Fields and Solutal Buoyancy on Silicon Dissolution Into Germanium Melt

Influence of Static Magnetic Fields and Solutal Buoyancy on Silicon Dissolution Into Germanium Melt

Author: Anton Kidess

Publisher:

Published: 2009

Total Pages:

ISBN-13:

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Elemental semiconductors like silicon and germanium have been used since the beginning of the electronics industry. Silicon has dominated research and production and thus silicon based devices can be produced at the lowest cost using the most mature technology. While dopants can be used to tailor the electric properties of the semiconductor within certain limits, more flexibility is gained using compound semiconductors such as silicon-germanium. The electric properties of a compound semiconductor are highly dependant on the composition, which in turn is influenced by the dissolution reaction and flow characteristics during the growth process. Liquid phase diffusion (LPD) is a solution growth technique that has been proposed to grow silicon-germanium seed crystals for other growth techniques. The dissolution of silicon is a limiting factor for the growth rate in LPD and also Bridgman growth techniques. Investigation of the dissolution process is aimed at increasing the growth rate while still maintaining maximum uniformity of the crystal composition. To accomplish this, a static magnetic field was utilized in experiments done by Armour. The experimental results showed that a top seeded configuration without magnetic fields leads to a diffusion driven process and homogeneous dissolution, while the addition of a strong 0.8 Tesla magnetic field resulted in non-uniform and slightly increased dissolution. This work is complementary to the experimental investigation and aims to help understand the influence of magnetic fields on silicon dissolution. For this work, an OpenFOAM magnetohydrodynamics application including heat and species transport and three different magnetic force models has been developed and validated. The simulations done show that an isothermal state is reached within 90 seconds if no temperature gradient is imposed. Additional simulations with a temperature gradient helped to rule out a possible thermal leak in the experimental system, confirming that it must have been close to isothermal. Since the solutal expansion coefficient of has not been measured properly to the Author's knowledge, two possible values for the expansion coefficient have been considered. It has been found that the exact value of the solutal expansion coefficient does not have a great influence on the results of this work.


Crystal Growth Technology

Crystal Growth Technology

Author: Hans J. Scheel

Publisher: John Wiley & Sons

Published: 2009-07-31

Total Pages: 695

ISBN-13: 0470491108

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This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.


Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Crystal Growth and Evaluation of Silicon for VLSI and ULSI

Author: Golla Eranna

Publisher: CRC Press

Published: 2014-12-08

Total Pages: 432

ISBN-13: 1482232812

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Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.


CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications

CdTe and Related Compounds; Physics, Defects, Hetero- and Nano-structures, Crystal Growth, Surfaces and Applications

Author:

Publisher: Elsevier

Published: 2009-11-11

Total Pages: 292

ISBN-13: 0080965148

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Almost thirty years after the remarkable monograph of K. Zanio and the numerous conferences and articles dedicated since that time to CdTe and CdZnTe, after all the significant progresses in that field and the increasing interest in these materials for several extremely attractive industrial applications, such as nuclear detectors and solar cells, the edition of a new enriched and updated monograph dedicated to these two very topical II-VI semiconductor compounds, covering all their most prominent, modern and fundamental aspects, seemed very relevant and useful. Detailed coverage of the main topics associated with the very topical II-VI semiconductor compound CdTe and its alloy CZT Review of the CdTe recent developments Fundamental background of many topics clearly introduced and exposed


Physics and Chemistry of Interfaces

Physics and Chemistry of Interfaces

Author: Hans-Jürgen Butt

Publisher: John Wiley & Sons

Published: 2023-02-07

Total Pages: 485

ISBN-13: 3527836160

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Physics and Chemistry of Interfaces Comprehensive textbook on the interdisciplinary field of interface science, fully updated with new content on wetting, spectroscopy, and coatings Physics and Chemistry of Interfaces provides a comprehensive introduction to the field of surface and interface science, focusing on essential concepts rather than specific details, and on intuitive understanding rather than convoluted math. Numerous high-end applications from surface technology, biotechnology, and microelectronics are included to illustrate and help readers easily comprehend basic concepts. The new edition contains an increased number of problems with detailed, worked solutions, making it ideal as a self-study resource. In topic coverage, the highly qualified authors take a balanced approach, discussing advanced interface phenomena in detail while remaining comprehensible. Chapter summaries with the most important equations, facts, and phenomena are included to aid the reader in information retention. A few of the sample topics included in Physics and Chemistry of Interfaces are as follows: Liquid surfaces, covering microscopic picture of a liquid surface, surface tension, the equation of Young and Laplace, and curved liquid surfaces Thermodynamics of interfaces, covering surface excess, internal energy and Helmholtz energy, equilibrium conditions, and interfacial excess energies Charged interfaces and the electric double layer, covering planar surfaces, the Grahame equation, and limitations of the Poisson-Boltzmann theory Surface forces, covering Van der Waals forces between molecules, macroscopic calculations, the Derjaguin approximation, and disjoining pressure Physics and Chemistry of Interfaces is a complete reference on the subject, aimed at advanced students (and their instructors) in physics, material science, chemistry, and engineering. Researchers requiring background knowledge on surface and interface science will also benefit from the accessible yet in-depth coverage of the text.


Centrifugal Materials Processing

Centrifugal Materials Processing

Author: Liya L. Regel

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 296

ISBN-13: 1461559413

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It is not good to have zeal without knowledge • . . . Book of Proverbs This volume constitutes the proceedings of the Third International Workshop on Materials Processing at High Gravity. It offers the latest results in a new field with immense potential for commercialization, making this book a vital resource for research and development professionals in industry, academia and government. We have titled the proceedings Centrifugal Materials Processing to emphasize that centrifugation causes more than an increase in acceleration. It also introduces the Coriolis force and a gradient of acceleration, both of which have been discovered to play important roles in materials processing. The workshop was held June 2-8, 1996 on the campus of Clarkson University in Potsdam, New York, under the sponsorship of Corning Corporation and the International Center for Gravity Materials Science and Applications. The meeting was very productive and exciting, with energetic discussions of the latest discoveries in centrifugal materials processing, continuing the atmosphere of the first workshop held in 1991 at Dubna (Russia) and the second workshop held in 1993 in Potsdam, New York. Results and research plans were presented for a wide variety of centrifugal materials processing, including directional solidification of semiconductors, crystallization of high Tc superconductors, growth of diamond thin films, welding, alloy casting, solution behavior and growth, protein crystal growth, polymerization, and flow behavior. Also described were several centrifuge facilities that have been constructed for research, with costs beginning at below $1000.


C, H, N and O in Si and Characterization and Simulation of Materials and Processes

C, H, N and O in Si and Characterization and Simulation of Materials and Processes

Author: A. Borghesi

Publisher: Newnes

Published: 2012-12-02

Total Pages: 580

ISBN-13: 044459633X

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.


Chemical Metallurgy

Chemical Metallurgy

Author: Chiranjib Kumar Gupta

Publisher: John Wiley & Sons

Published: 2006-03-06

Total Pages: 831

ISBN-13: 3527605258

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Chemical metallurgy is a well founded and fascinating branch of the wide field of metallurgy. This book provides detailed information on both the first steps of separation of desirable minerals and the subsequent mineral processing operations. The complex chemical processes of extracting various elements through hydrometallurgical, pyrometallurgical or electrometallurgical operations are explained. In the choice of material for this work, the author made good use of the synergy of scientific principles and industrial practices, offering the much needed and hitherto unavailable combination of detailed treatises on both compiled in one book.


A Peacebuilding Tool for a Conflict-Sensitive Approach to Development

A Peacebuilding Tool for a Conflict-Sensitive Approach to Development

Author: Asian Development Bank

Publisher: Asian Development Bank

Published: 2012-03-01

Total Pages: 102

ISBN-13: 929092604X

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The Asian Development Bank (ADB) works with a number of developing member countries facing fragile and conflict-affected situations---circumstances that complicate economic development, and might include domestic or international conflict, ethnic tensions, vulnerability to natural disasters, or a confluence of these factors. ADB piloted the peacebuilding tool in Nepal as a conflict-sensitive approach, a key to effective and safe implementation of projects in the country's post-conflict context. The peacebuilding tool is an analytical tool for assisting project team leaders and social experts in understanding the local context, and in identifying potential risks to implementation of development projects that are linked to social conflicts, as well as in formulating mitigation measures for addressing these risks.