Handbook for III-V High Electron Mobility Transistor Technologies

Handbook for III-V High Electron Mobility Transistor Technologies

Author: D. Nirmal

Publisher: CRC Press

Published: 2019-05-14

Total Pages: 443

ISBN-13: 0429862539

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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots


III-V Compound Semiconductors

III-V Compound Semiconductors

Author: Tingkai Li

Publisher: CRC Press

Published: 2016-04-19

Total Pages: 588

ISBN-13: 1439815232

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Silicon-based microelectronics has steadily improved in various performance-to-cost metrics. But after decades of processor scaling, fundamental limitations and considerable new challenges have emerged. The integration of compound semiconductors is the leading candidate to address many of these issues and to continue the relentless pursuit of more


Molecular Beam Epitaxy

Molecular Beam Epitaxy

Author: Mohamed Henini

Publisher: Elsevier

Published: 2018-06-27

Total Pages: 790

ISBN-13: 0128121378

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community


Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Semiconductor Devices and Technologies for Future Ultra Low Power Electronics

Author: D. Nirmal

Publisher: CRC Press

Published: 2021-12-10

Total Pages: 303

ISBN-13: 1000475360

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This book covers the fundamentals and significance of 2-D materials and related semiconductor transistor technologies for the next-generation ultra low power applications. It provides comprehensive coverage on advanced low power transistors such as NCFETs, FinFETs, TFETs, and flexible transistors for future ultra low power applications owing to their better subthreshold swing and scalability. In addition, the text examines the use of field-effect transistors for biosensing applications and covers design considerations and compact modeling of advanced low power transistors such as NCFETs, FinFETs, and TFETs. TCAD simulation examples are also provided. FEATURES Discusses the latest updates in the field of ultra low power semiconductor transistors Provides both experimental and analytical solutions for TFETs and NCFETs Presents synthesis and fabrication processes for FinFETs Reviews details on 2-D materials and 2-D transistors Explores the application of FETs for biosensing in the healthcare field This book is aimed at researchers, professionals, and graduate students in electrical engineering, electronics and communication engineering, electron devices, nanoelectronics and nanotechnology, microelectronics, and solid-state circuits.


Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele

Semiconductor Wafer Bonding 11: Science, Technology, and Applications - In Honor of Ulrich Gösele

Author: C. Colinge

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 656

ISBN-13: 1566778239

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Semiconductor wafer bonding continues to evolve as a crucial technology extending new integration schemes and disseminating new product architectures in such diverse areas as high quality silicon-on-insulator (SOI) materials for electronic applications, Si-Ge strained layers, Germanium-on-Insulator (GeOI), 3D device integration, Si on quartz or glass for thin film displays, compound semiconductor-on-Si heterostructures and Micro-Electro-Mechanical Systems.


Advances in Terahertz Source Technologies

Advances in Terahertz Source Technologies

Author: Gun-Sik Park

Publisher: CRC Press

Published: 2024-04-16

Total Pages: 773

ISBN-13: 1000995453

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During the past several decades, tremendous progress has been made in terahertz (THz) science and technology. There is a continuing need to have terahertz waves ready for practical applications. Terahertz photonic and electronic devices are being readied to be employed in application systems such as communication links, satellite communications, radar, surveillance, hard/soft material heating, biomedical treatment, and biomedical diagnostics. This book focuses on the advances in terahertz source technologies both from photonics and electronics (solid-state and vacuum-state) points of view. Written in a noncomplicated language, the book will be useful for a broad spectrum of readers, including advanced undergraduate- and graduate-level students in electronics and photonics, researchers in various disciplines in physics, chemistry, biology, astronomy, and electrical engineering, system engineers in various industrial sectors, general readers, and those who are interested in the interaction between electromagnetic waves and matters and in the effects of electromagnetic waves on matters.


Diode Lasers and Photonic Integrated Circuits

Diode Lasers and Photonic Integrated Circuits

Author: Larry A. Coldren

Publisher: John Wiley & Sons

Published: 2012-03-02

Total Pages: 752

ISBN-13: 1118148185

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Diode Lasers and Photonic Integrated Circuits, Second Edition provides a comprehensive treatment of optical communication technology, its principles and theory, treating students as well as experienced engineers to an in-depth exploration of this field. Diode lasers are still of significant importance in the areas of optical communication, storage, and sensing. Using the the same well received theoretical foundations of the first edition, the Second Edition now introduces timely updates in the technology and in focus of the book. After 15 years of development in the field, this book will offer brand new and updated material on GaN-based and quantum-dot lasers, photonic IC technology, detectors, modulators and SOAs, DVDs and storage, eye diagrams and BER concepts, and DFB lasers. Appendices will also be expanded to include quantum-dot issues and more on the relation between spontaneous emission and gain.


Microwave Active Devices and Circuits for Communication

Microwave Active Devices and Circuits for Communication

Author: Subhash Chandra Bera

Publisher: Springer

Published: 2018-12-11

Total Pages: 700

ISBN-13: 9811330042

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The book discusses active devices and circuits for microwave communications. It begins with the basics of device physics and then explores the design of microwave communication systems including analysis and the implementation of different circuits. In addition to classic topics in microwave active devices, such as p-i-n diodes, Schottky diodes, step recovery diodes, BJT, HBT, MESFET, HFET, and various microwave circuits like switch, phase shifter, attenuator, detector, amplifier, multiplier and mixer, the book also covers modern areas such as Class-F power amplifiers, direct frequency modulators, linearizers, and equalizers. Most of the examples are based on practical devices available in commercial markets and the circuits presented are operational. The book uses analytical methods to derive values of circuit components without the need for any circuit design tools, in order to explain the theory of the circuits. All the given analytical expressions are also cross verified using commercially available microwave circuit design tools, and each chapter includes relevant diagrams and solved problems. It is intended for scholars in the field of electronics and communication engineering.


SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 4: Materials, Processing, and Devices

Author: D. Harame

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 1066

ISBN-13: 1566778255

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Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds has become a key component in the arsenal in improving semiconductor performance. This symposium discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.


Telecommunication Networks

Telecommunication Networks

Author: Eugenio Iannone

Publisher: CRC Press

Published: 2017-12-19

Total Pages: 921

ISBN-13: 1351833413

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Many argue that telecommunications network infrastructure is the most impressive and important technology ever developed. Analyzing the telecom market’s constantly evolving trends, research directions, infrastructure, and vital needs, Telecommunication Networks responds with revolutionized engineering strategies to optimize network construction. Omnipresent in society, telecom networks integrate a wide range of technologies. These include quantum field theory for the study of optical amplifiers, software architectures for network control, abstract algebra required to design error correction codes, and network, thermal, and mechanical modeling for equipment platform design. Illustrating how and why network developers make technical decisions, this book takes a practical engineering approach to systematically assess the network as a whole—from transmission to switching. Emphasizing a uniform bibliography and description of standards, it explores existing technical developments and the potential for projected alternative architectural paths, based on current market indicators. The author characterizes new device and equipment advances not just as quality improvements, but as specific responses to particular technical market necessities. Analyzing design problems to identify potential links and commonalities between different parts of the system, the book addresses interdependence of these elements and their individual influence on network evolution. It also considers power consumption and real estate, which sometimes outweigh engineering performance data in determining a product’s success. To clarify the potential and limitations of each presented technology and system analysis, the book includes quantitative data inspired by real products and prototypes. Whenever possible, it applies mathematical modeling to present measured data, enabling the reader to apply demonstrated concepts in real-world situations. Covering everything from high-level architectural elements to more basic component physics, its focus is to solve a problem from different perspectives, and bridge descriptions of well-consolidated solutions with newer research trends.