In Situ Studies of Strain Relaxation During III-V Semiconductor Heteroepitaxy
Author: Candace Lynch
Publisher:
Published: 2005
Total Pages: 340
ISBN-13:
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Author: Candace Lynch
Publisher:
Published: 2005
Total Pages: 340
ISBN-13:
DOWNLOAD EBOOKAuthor: Udo W. Pohl
Publisher: Springer Nature
Published: 2020-07-20
Total Pages: 546
ISBN-13: 3030438694
DOWNLOAD EBOOKThe extended and revised edition of this textbook provides essential information for a comprehensive upper-level graduate course on the crystalline growth of semiconductor heterostructures. Heteroepitaxy is the basis of today’s advanced electronic and optoelectronic devices, and it is considered one of the most important fields in materials research and nanotechnology. The book discusses the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and it describes the major growth techniques: metalorganic vapor-phase epitaxy, molecular-beam epitaxy, and liquid-phase epitaxy. It also examines in detail cubic and hexagonal semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures, and processes during nucleation and growth. Requiring only minimal knowledge of solid-state physics, it provides natural sciences, materials science and electrical engineering students and their lecturers elementary introductions to the theory and practice of epitaxial growth, supported by references and over 300 detailed illustrations. In this second edition, many topics have been extended and treated in more detail, e.g. in situ growth monitoring, application of surfactants, properties of dislocations and defects in organic crystals, and special growth techniques like vapor-liquid-solid growth of nanowires and selective-area epitaxy.
Author: Luis A Zepeda-Ruiz
Publisher:
Published: 2000
Total Pages: 191
ISBN-13:
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Publisher:
Published: 2005
Total Pages: 768
ISBN-13:
DOWNLOAD EBOOKAuthor: Yi Wang
Publisher: LAP Lambert Academic Publishing
Published: 2012-08
Total Pages: 132
ISBN-13: 9783659222856
DOWNLOAD EBOOKThe misfit dislocations and strain relaxation play a critical role in growth of high quality Sb-based III-V hetero-structures, which is of great interest for applications in the near- and far-infrared optoelectronics and ultra-high speed low-power consumption electronics. The aim of this work is to carry out an extensive TEM investigation of Sb-based III-V layer on the GaAs (or GaP) substrates and especially try to point out the relationship between the misfit dislocations types, strain relaxation, and the misfit dislocation formation mechanism. This book includes an introduction of this research and the state of art of the MBE epitaxy of GaSb; the facilities as well as the theoretical tools used to investigate the misfit dislocation and strain relaxation; growth optimization of highly lattice mismatched GaSb on GaAs as well as GaP substrate; and experimental & theoretical work to investigate the misfit dislocation formation mechanism. The results presented in this book will be useful for those working in the field of epitaxy of highly lattice mismatched III-V semiconductors.
Author:
Publisher: Newnes
Published: 2011-01-28
Total Pages: 3572
ISBN-13: 0080932282
DOWNLOAD EBOOKSemiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author:
Publisher:
Published: 1990
Total Pages: 980
ISBN-13:
DOWNLOAD EBOOKAuthor: Bernard Gil
Publisher:
Published: 2002
Total Pages: 494
ISBN-13: 9780198509745
DOWNLOAD EBOOKOptoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.
Author: Mohamed Henini
Publisher: Elsevier
Published: 2018-06-27
Total Pages: 790
ISBN-13: 0128121378
DOWNLOAD EBOOKMolecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community