In Situ Process Diagnostics and Modeling: Volume 569

In Situ Process Diagnostics and Modeling: Volume 569

Author: Orlando Auciello

Publisher:

Published: 1999-08-11

Total Pages: 226

ISBN-13:

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Papers from an April 1999 symposium demonstrate the need for the development and application of a variety of complementary in situ, real-time characterization techniques to advance the science and technology of thin films and interfaces critical to the development of a new generation of thin-film-based devices. Papers are arranged in sections on in situ ion and electron-beam analysis, in situ spectroscopic ellipsometry and other optical characterization, in situ diagnostics and modeling, in situ emission and optical characterization techniques, and in situ X-ray, TEM, and STM/AFM characterization and processing control. Auciello is affiliated with Argonne National Laboratory. Annotation copyrighted by Book News, Inc., Portland, OR


Nucleation and Growth Processes in Materials

Nucleation and Growth Processes in Materials

Author: Antonios Gonis

Publisher:

Published: 2000

Total Pages: 474

ISBN-13:

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One of the goals of materials science is to design alloys with pre-specified desirable technological properties. To achieve this goal, it is necessary to have a thorough understanding of the fundamental mechanisms underlying materials behavior. In particular, one must understand the effects on alloy properties caused by intentional changes in concentration and how the combinations of temperature, time and uncontrollable foreign impurities affect microstructure. In addition to the equilibrium phase information contained in phase diagrams, nonequilibrium dynamic processes and metastable phases are known to be crucial in determining materials properties. This volume brings together researchers working on various aspects of nonequilibrium processes in materials to discuss current research issues and to provide guidelines for future work. Particular attention was paid to understanding particle nucleation and growth, both experimentally and theoretically, solid-state reactions, nanosystems, liquid-solid transformations, and solidification and amorphization. On the theoretical side, fundamental principles governing nucleation and growth, and related phenomena such as coarsening and Ostwald ripening, are discussed. Progress is also reported on the phase field method and on Monte Carlo simulations.


GaN and Related Alloys - 1999: Volume 595

GaN and Related Alloys - 1999: Volume 595

Author: Thomas H. Myers

Publisher:

Published: 2000-05-05

Total Pages: 1070

ISBN-13:

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This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.