Hot Carrier Design Considerations for MOS Devices and Circuits
Hot Carrier Design Considerations for MOS Devices and Circuits

Author: Cheng Wang

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 345

ISBN-13: 1468485474

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As device dimensions decrease, hot-carrier effects, which are due mainly to the presence of a high electric field inside the device, are becoming a major design concern. On the one hand, the detrimental effects-such as transconductance degradation and threshold shift-need to be minimized or, if possible, avoided altogether. On the other hand, performance such as the programming efficiency of nonvolatile memories or the carrier velocity inside the devices-need to be maintained or improved through the use of submicron technologies, even in the presence of a reduced power supply. As a result, one of the major challenges facing MOS design engineers today is to harness the hot-carrier effects so that, without sacrificing product performance, degradation can be kept to a minimum and a reli able design obtained. To accomplish this, the physical mechanisms re sponsible for the degradations should first be experimentally identified and characterized. With adequate models thus obtained, steps can be taken to optimize the design, so that an adequate level of quality assur ance in device or circuit performance can be achieved. This book ad dresses these hot-carrier design issues for MOS devices and circuits, and is used primarily as a professional guide for process development engi neers, device engineers, and circuit designers who are interested in the latest developments in hot-carrier degradation modeling and hot-carrier reliability design techniques. It may also be considered as a reference book for graduate students who have some research interests in this excit ing, yet sometime controversial, field.

Electrical Characterization of Silicon-on-Insulator Materials and Devices
Electrical Characterization of Silicon-on-Insulator Materials and Devices

Author: Sorin Cristoloveanu

Publisher: Springer Science & Business Media

Published: 1995-06-30

Total Pages: 414

ISBN-13: 9780792395485

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Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Istfa '98
Istfa '98

Author: ASM International

Publisher: ASM International

Published: 1998-01-01

Total Pages: 453

ISBN-13: 161503076X

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Selected Semiconductor Research
Selected Semiconductor Research

Author: Ming Fu Li

Publisher: World Scientific

Published: 2011-02-28

Total Pages: 529

ISBN-13: 1908978384

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This unique volume assembles the author's scientific and engineering achievements of the past three decades in the areas of (1) semiconductor physics and materials, including topics in deep level defects and band structures, (2) CMOS devices, including the topics in device technology, CMOS device reliability, and nano CMOS device quantum modeling, and (3) Analog Integrated circuit design. It reflects the scientific career of a semiconductor researcher educated in China during the 20th century. The book can be referenced by research scientists, engineers, and graduate students working in the areas of solid state and semiconductor physics and materials, electrical engineering and semiconductor devices, and chemical engineering./a

Linear CMOS RF Power Amplifiers
Linear CMOS RF Power Amplifiers

Author: Hector Solar Ruiz

Publisher: Springer Science & Business Media

Published: 2013-09-14

Total Pages: 191

ISBN-13: 1461486572

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The work establishes the design flow for the optimization of linear CMOS power amplifiers from the first steps of the design to the final IC implementation and tests. The authors also focuses on design guidelines of the inductor’s geometrical characteristics for power applications and covers their measurement and characterization. Additionally, a model is proposed which would facilitate designs in terms of transistor sizing, required inductor quality factors or minimum supply voltage. The model considers limitations that CMOS processes can impose on implementation. The book also provides different techniques and architectures that allow for optimization.

Physical and Technical Problems of SOI Structures and Devices
Physical and Technical Problems of SOI Structures and Devices

Author: J.-P. Colinge

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 296

ISBN-13: 9401101094

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In Physical and Technical Problems of SOI Structures and Devices, specialists in silicon-on-insulator technology from both East and West meet for the first time, giving the reader the chance to become acquainted with work from the former Soviet Union, hitherto only available in Russian and barely available to western scientists. Keynote lectures and state-of-the-art presentations give a wide-ranging panorama of the challenges posed by SOI materials and devices, material fabrication techniques, characterisation, device and circuit issues.

Quality and Reliability of Technical Systems
Quality and Reliability of Technical Systems

Author: Alessandro Birolini

Publisher: Springer Science & Business Media

Published: 2013-03-14

Total Pages: 538

ISBN-13: 3662029707

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High reliability, maintainability, and safety are expected from complex equipment and systems. To build these characteristics into an item, failure rate and failure mode analyses have to be performed early in the design phase, starting at the com ponent level, and have to be supported by a set of design guidelines for reliability and maintainability as well as by extensive design reviews. Before production, qualification tests of prototypes must ensure that quality and reliability targets have been reached. In the production phase, processes and procedures have to be selec ted and monitored to assure the required quality level. For many systems, availabi lity requirements must also be satisfied. In these cases, stochastic processes can be used to investigate and optimize availability, including logistical support. This book presents the state of the art of the methods and procedures necessary for a cost and time effective quality and reliability assurance during the design and production of equipment and systems. It takes into consideration that: 1. Quality and reliability assurance of complex equipment and systems requires that all engineers involved in a project undertake a set of specific activities from the definition to the operating phase, which are performed concurrently to achieve the best performance, quality, and reliability for given cost and time schedule targets.

Advanced MOS Device Physics
Advanced MOS Device Physics

Author: Norman Einspruch

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 383

ISBN-13: 0323153135

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VLSI Electronics Microstructure Science, Volume 18: Advanced MOS Device Physics explores several device physics topics related to metal oxide semiconductor (MOS) technology. The emphasis is on physical description, modeling, and technological implications rather than on the formal aspects of device theory. Special attention is paid to the reliability physics of small-geometry MOSFETs. Comprised of eight chapters, this volume begins with a general picture of MOS technology development from the device and processing points of view. The critical issue of hot-carrier effects is discussed, along with the device engineering aspects of this problem; the emerging low-temperature MOS technology; and the problem of latchup in scaled MOS circuits. Several device models that are suitable for use in circuit simulators are also described. The last chapter examines novel electron transport effects observed in ultra-small MOS structures. This book should prove useful to semiconductor engineers involved in different aspects of MOS technology development, as well as for researchers in this field and students of the corresponding disciplines.

Flash Memories
Flash Memories

Author: Paulo Cappelletti

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 544

ISBN-13: 1461550157

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A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories are electrically programmed and erased by UV exposure for 20-30 mins. In the late 1970s, there have been many efforts to develop an electrically erasable EPROM, which resulted in EEPROMs (Electrically Erasable Programmable ROMs). EEPROMs use hot electron tunneling for program and Fowler-Nordheim tunneling for erase. The EEPROM cell consists of two transistors and a tunnel oxide, thus it is two or three times the size of an EPROM. Successively, the combination of hot carrier programming and tunnel erase was rediscovered to achieve a single transistor EEPROM, called Flash EEPROM. The first cell based on this concept has been presented in 1979 [3]; the first commercial product, a 256K memory chip, has been presented by Toshiba in 1984 [4]. The market did not take off until this technology was proven to be reliable and manufacturable [5].