High Mobility and Quantum Well Transistors

High Mobility and Quantum Well Transistors

Author: Geert Hellings

Publisher: Springer Science & Business Media

Published: 2013-03-25

Total Pages: 154

ISBN-13: 9400763409

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For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Quantum Well pFET – is discussed. Electrical testing shows remarkable short-channel performance and prototypes are found to be competitive with a state-of-the-art planar strained-silicon technology. High mobility channels, providing high drive current, and heterostructure confinement, providing good short-channel control, make a promising combination for future technology nodes.


Physics of Quantum Well Devices

Physics of Quantum Well Devices

Author: B.R. Nag

Publisher: Springer Science & Business Media

Published: 2006-04-11

Total Pages: 309

ISBN-13: 0306471272

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Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.


Intelligent Integrated Systems

Intelligent Integrated Systems

Author: Simon Deleonibus

Publisher: CRC Press

Published: 2014-04-09

Total Pages: 518

ISBN-13: 9814411426

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This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Transistors and 3-D monolithic Integration, which the alternative materials could possibly use in the future. The way we can augment silicon technologies is illustrated by the co-integration of new types of devices, such as molecular and resistive spintronics-based memories and smart sensors, using nanoscale features co-integrated with silicon CMOS or above it.


Compound Semiconductor Materials and Devices

Compound Semiconductor Materials and Devices

Author: Zhaojun Liu

Publisher: Springer Nature

Published: 2022-06-01

Total Pages: 65

ISBN-13: 3031020286

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Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials. The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate. With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.


Handbook of Thin Film Deposition

Handbook of Thin Film Deposition

Author: Krishna Seshan

Publisher: William Andrew

Published: 2018-02-23

Total Pages: 472

ISBN-13: 0128123125

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Handbook of Thin Film Deposition, Fourth Edition, is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, materials for memory applications and methods for thin film optical processes. The book is broken up into three sections: scaling, equipment and processing, and applications. In this newly revised edition, the handbook will also explore the limits of thin film applications, most notably as they relate to applications in manufacturing, materials, design and reliability. - Offers a practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance, applications and the limitations faced by those processes - Covers core processes and applications in the semiconductor industry and new developments within the photovoltaic and optical thin film industries - Features a new chapter discussing Gates Dielectrics


Physics of High-Speed Transistors

Physics of High-Speed Transistors

Author: Juras Pozela

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 351

ISBN-13: 1489912428

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This book examines the physical principles behind the operation of high-speed transistors operating at frequencies above 10 GHz and having switching times less than 100 psec. If the 1970s cannot be remembered for the opportunities for creating and extensively using transistors operating at such high speeds, then, the situation has changed radically because of rapid progress in sub micrometer technology for manufacturing transistors and integrated circuits from GaAs and other semiconductor materials and the powerful influx of new physical concepts. Not only have transistors having switching speeds of 50-100 psec operating in the 10-20 GHz region been created in recent years, but the possibilities for manufacturing transistors operating one to two orders of magnitude faster have been revealed. As superhigh-speed transistors have been created, many of the most important areas of technology such as communications, computing technology, television, radar, and the manufacture of scientific, industrial, and medical equipment have qualitatively changed. Microwave transistors operating at millimeter wavelengths make it possible to produce compact and highly efficient equipment for communications and radar technology. Transistors with switching speeds better than 10-100 psec make it possible to increase the speed of microprocessors and other computer components to tens of billions of operations per second and thereby solve one of the most pressing problems of modern electronics - increasing the speed of digital information processing.


Nanowires

Nanowires

Author: Nicoleta Lupu

Publisher: BoD – Books on Demand

Published: 2010-02-01

Total Pages: 412

ISBN-13: 9537619893

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This book describes nanowires fabrication and their potential applications, both as standing alone or complementing carbon nanotubes and polymers. Understanding the design and working principles of nanowires described here, requires a multidisciplinary background of physics, chemistry, materials science, electrical and optoelectronics engineering, bioengineering, etc. This book is organized in eighteen chapters. In the first chapters, some considerations concerning the preparation of metallic and semiconductor nanowires are presented. Then, combinations of nanowires and carbon nanotubes are described and their properties connected with possible applications. After that, some polymer nanowires single or complementing metallic nanowires are reported. A new family of nanowires, the photoferroelectric ones, is presented in connection with their possible applications in non-volatile memory devices. Finally, some applications of nanowires in Magnetic Resonance Imaging, photoluminescence, light sensing and field-effect transistors are described. The book offers new insights, solutions and ideas for the design of efficient nanowires and applications. While not pretending to be comprehensive, its wide coverage might be appropriate not only for researchers but also for experienced technical professionals.


Properties of III-V Quantum Wells and Superlattices

Properties of III-V Quantum Wells and Superlattices

Author: P. K. Bhattacharya

Publisher: IET

Published: 1996

Total Pages: 238

ISBN-13: 9780852968819

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A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.


Nanometer CMOS

Nanometer CMOS

Author: Juin J. Liou

Publisher: CRC Press

Published: 2010-02-28

Total Pages: 271

ISBN-13: 1466511702

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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.


Advancements of Medical Electronics

Advancements of Medical Electronics

Author: Somsubhra Gupta

Publisher: Springer

Published: 2015-01-14

Total Pages: 396

ISBN-13: 8132222563

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The book is a collection of peer-reviewed scientific papers submitted by active researchers in the 1st International Conference on Advancements of Medical Electronics (ICAME2015). The conference is organized jointly by the Department of Biomedical Engineering and Electronics and Communication Engineering, JIS College of Engineering, West Bengal, India. The primary objective of the conference is to strengthen interdisciplinary research and its applications for the welfare of humanity. A galaxy of academicians, professionals, scientists, statesman and researchers from different parts of the country and abroad got together and shared their knowledge. The book presents research articles of medical image processing & analysis, biomedical instrumentation & measurements, DSP & clinical applications, embedded systems & its applications in healthcare. The book can be referred as a tool for further research.