Wide Bandgap Semiconductors for Power Electronics
Wide Bandgap Semiconductors for Power Electronics

Author: Peter Wellmann

Publisher: John Wiley & Sons

Published: 2022-01-10

Total Pages: 743

ISBN-13: 3527346716

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Wide Bandgap Semiconductors for Power Electronic A guide to the field of wide bandgap semiconductor technology Wide Bandgap Semiconductors for Power Electronics is a comprehensive and authoritative guide to wide bandgap materials silicon carbide, gallium nitride, diamond and gallium(III) oxide. With contributions from an international panel of experts, the book offers detailed coverage of the growth of these materials, their characterization, and how they are used in a variety of power electronics devices such as transistors and diodes and in the areas of quantum information and hybrid electric vehicles. The book is filled with the most recent developments in the burgeoning field of wide bandgap semiconductor technology and includes information from cutting-edge semiconductor companies as well as material from leading universities and research institutions. By taking both scholarly and industrial perspectives, the book is designed to be a useful resource for scientists, academics, and corporate researchers and developers. This important book: Presents a review of wide bandgap materials and recent developments Links the high potential of wide bandgap semiconductors with the technological implementation capabilities Offers a unique combination of academic and industrial perspectives Meets the demand for a resource that addresses wide bandgap materials in a comprehensive manner Written for materials scientists, semiconductor physicists, electrical engineers, Wide Bandgap Semiconductors for Power Electronics provides a state of the art guide to the technology and application of SiC and related wide bandgap materials.

Power Electronics for Green Energy Conversion
Power Electronics for Green Energy Conversion

Author: Mahajan Sagar Bhaskar

Publisher: John Wiley & Sons

Published: 2022-08-09

Total Pages: 644

ISBN-13: 1119786487

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POWER ELECTRONICS for GREEN ENERGY CONVERSION Written and edited by a team of renowned experts, this exciting new volume explores the concepts and practical applications of power electronics for green energy conversion, going into great detail with ample examples, for the engineer, scientist, or student. Power electronics has emerged as one of the most important technologies in the world and will play a big role in the conversion of the present power grid systems into smart grids. Applications like HVDC systems, FACTs devices, uninterruptible power systems, and renewable energy systems totally rely on advances in power electronic devices and control systems. Further, the need for renewable energy continues to grow, and the complete departure of fossil fuels and nuclear energy is not unrealistic thanks to power electronics. Therefore, the increasingly more important role of power electronics in the power sector industry remains paramount. This groundbreaking new volume aims to cover these topics and trends of power electronic converters, bridging the research gap on green energy conversion system architectures, controls, and protection challenges to enable their wide-scale implementation. Covering not only the concepts of all of these topics, the editors and contributors describe real-world implementation of these ideas and how they can be used for practical applications. Whether for the engineer, scientist, researcher, or student, this outstanding contribution to the science is a must-have for any library.

SiC based Miniaturized Devices
SiC based Miniaturized Devices

Author: Stephen Edward Saddow

Publisher: MDPI

Published: 2020-06-18

Total Pages: 170

ISBN-13: 3039360108

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MEMS devices are found in many of today’s electronic devices and systems, from air-bag sensors in cars to smart phones, embedded systems, etc. Increasingly, the reduction in dimensions has led to nanometer-scale devices, called NEMS. The plethora of applications on the commercial market speaks for itself, and especially for the highly precise manufacturing of silicon-based MEMS and NEMS. While this is a tremendous achievement, silicon as a material has some drawbacks, mainly in the area of mechanical fatigue and thermal properties. Silicon carbide (SiC), a well-known wide-bandgap semiconductor whose adoption in commercial products is experiening exponential growth, especially in the power electronics arena. While SiC MEMS have been around for decades, in this Special Issue we seek to capture both an overview of the devices that have been demonstrated to date, as well as bring new technologies and progress in the MEMS processing area to the forefront. Thus, this Special Issue seeks to showcase research papers, short communications, and review articles that focus on: (1) novel designs, fabrication, control, and modeling of SiC MEMS and NEMS based on all kinds of actuation mechanisms; and (2) new developments in applying SiC MEMS and NEMS in consumer electronics, optical communications, industry, medicine, agriculture, space, and defense.

Thermal Reliability of Power Semiconductor Device in the Renewable Energy System
Thermal Reliability of Power Semiconductor Device in the Renewable Energy System

Author: Xiong Du

Publisher: Springer Nature

Published: 2022-07-08

Total Pages: 184

ISBN-13: 9811931321

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This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing reliability improvement techniques. This book is a valuable reference for the students and researchers who pay attention to the thermal reliability design of power semiconductor device.

Impedance Source Power Electronic Converters
Impedance Source Power Electronic Converters

Author: Yushan Liu

Publisher: John Wiley & Sons

Published: 2016-10-03

Total Pages: 420

ISBN-13: 1119037077

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Impedance Source Power Electronic Converters brings together state of the art knowledge and cutting edge techniques in various stages of research related to the ever more popular impedance source converters/inverters. Significant research efforts are underway to develop commercially viable and technically feasible, efficient and reliable power converters for renewable energy, electric transportation and for various industrial applications. This book provides a detailed understanding of the concepts, designs, controls, and application demonstrations of the impedance source converters/inverters. Key features: Comprehensive analysis of the impedance source converter/inverter topologies, including typical topologies and derived topologies. Fully explains the design and control techniques of impedance source converters/inverters, including hardware design and control parameter design for corresponding control methods. Presents the latest power conversion solutions that aim to advance the role of power electronics into industries and sustainable energy conversion systems. Compares impedance source converter/inverter applications in renewable energy power generation and electric vehicles as well as different industrial applications. Provides an overview of existing challenges, solutions and future trends. Supported by calculation examples, simulation models and results. Highly accessible, this is an invaluable resource for researchers, postgraduate/graduate students studying power electronics and its application in industry and renewable energy conversion as well as practising R&D engineers. Readers will be able to apply the presented material for the future design of the next generation of efficient power electronic converters/inverters.

Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications
Advanced Indium Arsenide-Based HEMT Architectures for Terahertz Applications

Author: N. Mohankumar

Publisher: CRC Press

Published: 2021-09-28

Total Pages: 114

ISBN-13: 1000454568

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High electron mobility transistor (HEMT) has better performance potential than the conventional MOSFETs. Further, InAs is a perfect candidate for the HEMT device architecture owing to its peak electron mobility. Advanced Indium Arsenide-based HEMT Architectures for Terahertz Applications characterizes the HEMT based on InAs III-V material to achieve outstanding current and frequency performance. This book explains different types of device architectures available to enhance performance including InAs-based single gate (SG) HEMT and double gate (DG) HEMT. The noise analysis of InAs-based SG and DG-HEMT is also discussed. The main goal of this book is to characterize the InAs device to achieve terahertz frequency regime with proper device parameters. Features: Explains the influence of InAs material in the performance of HEMTs and MOS-HEMTs. Covers novel indium arsenide architectures for achieving terahertz frequencies Discusses impact of device parameters on frequency response Illustrates noise characterization of optimized indium arsenide HEMTs Introduces terahertz electronics including sources for terahertz applications. This book is of special interest to researchers and graduate students in Electronics Engineering, High Electron Mobility Transistors, Semi-conductors, Communications, and Nanodevices.