High-Density Magnetic Recording and Integrated Magneto-Optics: Materials and Devices: Volume 517
High-Density Magnetic Recording and Integrated Magneto-Optics: Materials and Devices: Volume 517

Author: James Bain

Publisher:

Published: 1998-10-13

Total Pages: 706

ISBN-13:

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Papers from an April 1998 symposium are arranged, as was the symposium, in two sections, the first on materials for high-density magnetic recording--head materials for write transducers and readback sensors; and integrated magneto-optics--materials and devices. The first section comprises contributions in such areas as high moment pole materials; anisotropic magnetoresistance, giant magnetoresistance, and exchange materials; spin tunnel junctions; microstructual issues in longitudinal recording media; thermal stability; novel structures; and nanotribology of wear layers. The second section contains papers on garnet materials for integrated photonics--fabrication and processing, and devices; magneto-optic recording media; and diluted magnetic semiconductors and other materials. Annotation copyrighted by Book News, Inc., Portland, OR

Diffusion Mechanisms in Crystalline Materials: Volume 527
Diffusion Mechanisms in Crystalline Materials: Volume 527

Author: Yuri Mishin

Publisher: Mrs Proceedings

Published: 1998-08-19

Total Pages: 576

ISBN-13:

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Participants of the symposium held in April 1998 in San Francisco as part of the 1998 MRS Spring Meeting cleared the fog at least on some aspects of solid-state diffusion, particularly experimental and simulation techniques that provide access to atomic-scale mechanisms of diffusion in diverse classes of crystalline materials. The 68 contributions (including 18 invited talks) added to the knowledge base in several key areas: diffusion mechanisms in metals and alloys, in intermetallic compounds, and in semiconductors; grain boundary and surface diffusion, and diffusion in quasicrystals; and diffusion and ionic conductivity in ionic materials. Annotation copyrighted by Book News, Inc., Portland, OR

Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514
Advanced Interconnects and Contact Materials and Processes for Future Integrated Circuits: Volume 514

Author: S. P. Murarka

Publisher:

Published: 1998-11-02

Total Pages: 596

ISBN-13:

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Comprising the proceedings of an MRS symposium held in April of 1998, contributions in this volume are divided into ten sections: interconnection frontiers; aluminum interconnects; cobalt and other silicides; titanium silicide; MOSFET, source, drain, and interconnect engineering; copper interconnects and barriers; a poster session on advanced interconnects and contacts; contacts to compound semiconductor devices; novel interconnect materials and schemes; and diffusion barriers. Annotation copyrighted by Book News, Inc., Portland, OR

GaN and Related Alloys: Volume 537
GaN and Related Alloys: Volume 537

Author: S. J. Pearton

Publisher:

Published: 1999-09-14

Total Pages: 1056

ISBN-13:

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This book covers the full spectrum of activity in the GaN and related materials arena. These semiconductors are finding applications in full-color displays, high-density information storage, white lighting for outdoor or backlit displays, solar-blind UV detectors, high-power/high-temperature electronics, and covert undersea communications. Progress is been reported in the growth of thick layers on patterned substrates by various methods, leading to lower overall defect concentrations and improved current-voltage and reliability characteristics. The rapidly increasing market for blue/green LEDs is also noted by the entry of a number of new companies to the field. While these emitter technologies continue to be dominated by MOCVD material, there are exciting reports of UV detectors and HFET structures grown by MBE with device performance at least as good as by MOCVD. Topics include: GaN electronic and photonic devices; laser diodes and spectroscopy; electronic devices and processing; quantum dots and processing; novel growth, doping and processing and rare-earth doping and optical emission.

III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535
III-V and IV-IV Materials and Processing Challenges for Highly Integrated Microelectronics and Optoelectronics: Volume 535

Author: S. A. Ringel

Publisher:

Published: 1999-08-11

Total Pages: 338

ISBN-13:

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This book contains the proceedings of two symposia - 'Integration of Dissimilar Materials in Micro- and Optoelectronics' and 'III-V and SiGe Group IV Device/IC Processing Challenges for Commercial Applications'. The publication stems from the desire to achieve new levels of device functionality and higher levels of performance via integration of devices based on dissimilar semiconductors, where the constraint of lattice-matching on the breadth of attainable devices can be reduced. It covers fundamental topics germane to integration of a wide range of dissimilar materials spanning wide-bandgap III-V nitrides, III-V/Si integration, II-VI and II-VI/III-V compounds, heterovalent structures, oxides, photonic bandgap structures and others. Topics such as compliancy, dislocation control, selective area growth, bonding methodologies, etc. are featured. It also addresses processing issues in the manufacturing of III-V and Si-based heterostructures for commercial products. Here, the success enjoyed by silicon germanium technology is contrasted by the promise of silicon-carbon alloys which have opportunities and challenges for the new generation of process developers.

Materials Issues in Vacuum Microelectronics: Volume 509
Materials Issues in Vacuum Microelectronics: Volume 509

Author: Wei Zhu

Publisher: Mrs Proceedings

Published: 1998-08-21

Total Pages: 232

ISBN-13:

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The 31 papers, about half of the symposium's presentations, were selected to provide a representative sampling of the present status of materials used in vacuum microelectronics. They range across all aspects of electron field emission from theory and physical mechanisms to device structure, but many focus on the fabrication, characterization, and modeling of electron emissive materials. The sections cover field-emitter arrays and applications, carbon and wide-bandgap cathodes, and other cathode materials. Reproduced from typescripts. Annotation copyrighted by Book News, Inc., Portland, OR