Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide

Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide

Author: Kenneth R. Williamson

Publisher:

Published: 1978

Total Pages: 86

ISBN-13:

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Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author).


System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide

System OptimizatIon of the Glow Discharge Optical Spectroscopy Technique Used for Impurity Profiling of ION Implanted Gallium Arsenide

Author: Paul J. Apuzzo

Publisher:

Published: 1980

Total Pages: 73

ISBN-13:

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The glow discharge optical spectroscopy (GDOS) technique was investigated to determine if the sensitivity of the system could be improved. GDOS was applied to determine impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Modifications were made to the sputtering chamber and the light collection systems which resulted in a 3.7 times increase in system sensitivity. Comparisons were made to previous studies by sputtering GaAs samples implanted with Ge at energies of 90 keV and 120 keV and fluences of 5 x 10 to the 14th power/sq cm and 10 to the 15th power/sq cm. The implanted samples were sputtered in a low pressure argon gas discharge. Intensity of a strong emission line, characteristic of the implanted impurity, was monitored as a function of time. Profiles of Ge implanted GaAs were measured and analyzed. (Author).


Ion Implantation Impurity Analysis by Glow Discharge Optical Spectroscopy

Ion Implantation Impurity Analysis by Glow Discharge Optical Spectroscopy

Author: David S. Hake

Publisher:

Published: 1976

Total Pages: 84

ISBN-13:

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The Glow Discharge Optical Spectroscopy technique was investigated to determine if it could be used to measure total impurity concentration profiles in unannealed ion implanted GaAs. Cadmium, zinc, and magnesium ions, which are common p-type dopants in GaAs, were implanted at energies of 99 keV and 120 keV and fluences ranging from 10 to the 14th power to 10 to the 16th power ions/sq cm. The implanted GaAs samples were sputtered in a low pressure dc glow discharge using argon gas. Intensity of a strong emission line, characteristic of the implanted impurity, was monitored as a function of time. This intensity was combined with independently measuring GaAs substrate sputtering rates to calculate total impurity concentration profiles. Uncalibrated concentration profiles were obtained for Zn and Mg in GaAs. None was obtained for Cd. (Author).


Ion Implantation Techniques

Ion Implantation Techniques

Author: H. Ryssel

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 377

ISBN-13: 3642687792

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In recent years, ion implantation has developed into the major doping technique for integrated circuits. Several series of conferences have dealt with the application of ion implantation to semiconductors and other materials (Thousand Oaks 1970, Garmisch-Partenkirchen 1971, Osaka 1974, Warwick 1975, Boulder 1976, Budapest 1978, and Albany 1980). Another series of conferences was devoted more to implantation equipment and tech niques (Salford 1977, Trento 1978, and Kingston 1980). In connection with the Third International Conference on Ion Implantation: Equipment and Tech niques, held at Queen's University, ' Kingston, Ontario, Canada, July 8-11, 1980, a two-day instructional program was organized parallel to an implan tation conference for the first time. This implantation school concentra ted on aspects of implantation-equipment design. This book contains all lectures presented at the International Ion Implantation School organized in connection with the Fourth International Conference on Ion Implantation: Equipment and Techniques, held at the Convention Center, Berchtesgaden, Germany, September 13-17, 1982. In con trast to the first .school, the main emphasis in thiS school was placed on practical aspects of implanter operation and application. In three chap ters, various machine aspects of ion implantation (general concepts, ion sources, safety, calibration, dOSimetry), range distributions (stopping power, range profiles), and measuring techniques (electrical and nonelec tri ca 1 measu ri ng techni ques, annea 1 i ng) are di scussed. In the appendi x, a review of the state of the art in modern implantation equipment is given.


Handbook of Thin Films, Five-Volume Set

Handbook of Thin Films, Five-Volume Set

Author: Hari Singh Nalwa

Publisher: Elsevier

Published: 2001-11-17

Total Pages: 3451

ISBN-13: 0080533248

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This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.