GADEST 1997 Proceedings of the 7th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '97), Spa, Belgium, October 1997
Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield. This volume provides the most up-to-date information for scientists and engineers who are involved in the fields of semiconductor defect physics or materials science. Fundamental aspects, as well as technological problems, which are associated with defects in electronic materials and devices, are addressed. Due to the broad spectrum of topics covered, ranging from theoretical analyses to practical engineering solutions, the present book uniquely and complements others in the field. 1. Keynote Address. 2. Silicon Materials. 3. Gettering Techniques. 4. Oxygen in Silicon. 5. Erbium in Silicon. 6. Radiation Effects in Semiconductors. 7. Dislocations in Silicon. 8. Defect Engineering. 9. Advanced Semiconductor Materials and Devices. 10. Semiconductor Material and Device Diagnostics.
Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.
GADEST 2013 Selected, peer reviewed papers from the 15th Gettering and Defect Engineering in Semiconductor Technology (GADEST 2013), September 22-27, 2013, Oxford, UK
Diagnostic characterization techniques for semiconductor materials, devices and device processing are addressed at this symposium. It will cover new techniques as well as advances in routine analytical technology applied to semiconductor process development and manufacture. The hardcover edition includes a CD-ROM of ECS Transactions, Volume 10, Issue 1, Analytical Techniques for Semiconductor Materials and Process Characterization 5 (ALTECH 2007). The PDF edition also includes the ALTECH 2007 papers.
"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.