Gettering and Defect Engineering in Semiconductor Technology VI
Gettering and Defect Engineering in Semiconductor Technology VI

Author:

Publisher:

Published: 1995

Total Pages: 640

ISBN-13:

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At the present time, Si-based technology is undergoing a transition to the next generation of substrates, having a diameter of 300 mm. The fundamental physical limits are being approached in terms of miniaturization, increased chip area, faster switching speeds, and diversity of operations. This raises the question of the intrinsic limits of the currently predominant semiconductor, silicon, and of those circumstances where it may be advantageous to turn to materials such as GaAs, InP, or SiC. Progress in the field of semiconductor materials science is closely connected to the development of new or improved characterization techniques. These are tending towards atomic dimensions on the one hand and to the possibility of characterizing semiconductor wafers of increased diameter on the other hand. This timely publication comprises 20 invited and 54 contributed papers from more than 70 research institutes and universities in 23 countries, and offers a useful overview of the subject.

Gettering Defects in Semiconductors
Gettering Defects in Semiconductors

Author: Victor A. Perevostchikov

Publisher: Springer Science & Business Media

Published: 2005-12-12

Total Pages: 400

ISBN-13: 3540294996

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Gettering Defects in Semiconductors fulfills three basic purposes: – to systematize the experience and research in exploiting various gettering techniques in microelectronics and nanoelectronics; – to identify new directions in research, particularly to enhance the perspective of professionals and young researchers and specialists; – to fill a gap in the contemporary literature on the underlying semiconductor-material theory. The authors address not only well-established gettering techniques but also describe contemporary trends in gettering technologies from an international perspective. The types and properties of structural defects in semiconductors, their generating and their transforming mechanisms during fabrication are described. The primary emphasis is placed on classifying and describing specific gettering techniques, their specificity arising from both their position in a general technological process and the regimes of their application. This book addresses both engineers and material scientists interested in semiconducting materials theory and also undergraduate and graduate students in solid–state microelectronics and nanoelectronics. A comprehensive list of references provides readers with direction for further reading.