Gate-stack for Sub-50nm CMOS Devices
Author: Igor Polishchuk
Publisher:
Published: 2002
Total Pages: 314
ISBN-13:
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Author: Igor Polishchuk
Publisher:
Published: 2002
Total Pages: 314
ISBN-13:
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Publisher:
Published: 2005
Total Pages: 658
ISBN-13:
DOWNLOAD EBOOKAuthor: Mehmet C. Öztürk
Publisher: The Electrochemical Society
Published: 2004
Total Pages: 444
ISBN-13: 9781566774062
DOWNLOAD EBOOKAuthor: Simon Deleonibus
Publisher: CRC Press
Published: 2019-05-08
Total Pages: 302
ISBN-13: 0429533624
DOWNLOAD EBOOKIn this book, internationally recognized researchers give a state-of-the-art overview of the electronic device architectures required for the nano-CMOS era and beyond. Challenges relevant to the scaling of CMOS nanoelectronics are addressed through different core CMOS and memory device options in the first part of the book. The second part reviews new device concepts for nanoelectronics beyond CMOS. The book covers the fundamental limits of core CMOS, improving scaling by the introduction of new materials or processes, new architectures using SOI, multigates and multichannels, and quantum computing.
Author: Athanasios Dimoulas
Publisher: Springer Science & Business Media
Published: 2008-01-01
Total Pages: 397
ISBN-13: 354071491X
DOWNLOAD EBOOKThis book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.
Author: Arup Bhattacharyya
Publisher: CRC Press
Published: 2017-07-06
Total Pages: 566
ISBN-13: 1351798316
DOWNLOAD EBOOKThe primary focus of this book is on basic device concepts, memory cell design, and process technology integration. The first part provides in-depth coverage of conventional nonvolatile memory devices, stack structures from device physics, historical perspectives, and identifies limitations of conventional devices. The second part reviews advances made in reducing and/or eliminating existing limitations of NVM device parameters from the standpoint of device scalability, application extendibility, and reliability. The final part proposes multiple options of silicon based unified (nonvolatile) memory cell concepts and stack designs (SUMs). The book provides Industrial R&D personnel with the knowledge to drive the future memory technology with the established silicon FET-based establishments of their own. It explores application potentials of memory in areas such as robotics, avionics, health-industry, space vehicles, space sciences, bio-imaging, genetics etc.
Author: Qiang Lu
Publisher:
Published: 2002
Total Pages: 320
ISBN-13:
DOWNLOAD EBOOKAuthor: Fred Roozeboom
Publisher: The Electrochemical Society
Published: 2006
Total Pages: 472
ISBN-13: 1566775027
DOWNLOAD EBOOKThese proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.
Author: K. N. Bhat
Publisher: Alpha Science Int'l Ltd.
Published: 2004
Total Pages: 1310
ISBN-13: 9788173195679
DOWNLOAD EBOOKContributed papers of the workshop held at IIT, Madras, in 2003.
Author: Gang He
Publisher: John Wiley & Sons
Published: 2012-08-10
Total Pages: 560
ISBN-13: 3527646361
DOWNLOAD EBOOKA state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for experienced researchers and developers in materials science, physics and electrical engineering.