GaN Transistor Modeling for RF and Power Electronics

GaN Transistor Modeling for RF and Power Electronics

Author: Yogesh Singh Chauhan

Publisher: Elsevier

Published: 2024-05-20

Total Pages: 262

ISBN-13: 0323999409

DOWNLOAD EBOOK

GaN Transistor Modeling for RF and Power Electronics: Using The ASM-GaN-HEMT Model covers all aspects of characterization and modeling of GaN transistors for both RF and Power electronics applications. Chapters cover an in-depth analysis of the industry standard compact model ASM-HEMT for GaN transistors. The book details the core surface-potential calculations and a variety of real device effects, including trapping, self-heating, field plate effects, and more to replicate realistic device behavior. The authors also include chapters on step-by-step parameter extraction procedures for the ASM-HEMT model and benchmark test results. GaN is the fastest emerging technology for RF circuits as well as power electronics. This technology is going to grow at an exponential rate over the next decade. This book is envisioned to serve as an excellent reference for the emerging GaN technology, especially for circuit designers, materials science specialists, device engineers and academic researchers and students. - Provides an overview of the operation and physics of GaN-based transistors - Features in-depth description (by the developers of the model) of all aspects of the industry standard ASM-HEMT model for GaN circuits - Details parameter extraction of GaN devices and measurement data requirements for GaN model extraction


GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion

Author: Alex Lidow

Publisher: John Wiley & Sons

Published: 2019-08-12

Total Pages: 518

ISBN-13: 1119594421

DOWNLOAD EBOOK

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.


Gallium Nitride Power Devices

Gallium Nitride Power Devices

Author: Hongyu Yu

Publisher: CRC Press

Published: 2017-07-06

Total Pages: 301

ISBN-13: 1351767607

DOWNLOAD EBOOK

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.


GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion

Author: Alex Lidow

Publisher: John Wiley & Sons

Published: 2014-09-15

Total Pages: 266

ISBN-13: 1118844769

DOWNLOAD EBOOK

Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.


III-Nitride Electronic Devices

III-Nitride Electronic Devices

Author:

Publisher: Academic Press

Published: 2019-10-18

Total Pages: 542

ISBN-13: 0128175451

DOWNLOAD EBOOK

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. - Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas – RF and power electronics - Outlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologies - Written by a panel of academic and industry experts in each field


Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author: Sourabh Khandelwal

Publisher: Springer Nature

Published: 2022-01-01

Total Pages: 194

ISBN-13: 3030777308

DOWNLOAD EBOOK

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.


Device Characterization and Modeling of Large-Size GaN HEMTs

Device Characterization and Modeling of Large-Size GaN HEMTs

Author: Jaime Alberto Zamudio Flores

Publisher: kassel university press GmbH

Published: 2012-08-21

Total Pages: 257

ISBN-13: 3862193640

DOWNLOAD EBOOK

This work presents a comprehensive modeling strategy for advanced large-size AlGaN/GaN HEMTs. A 22-element equivalent circuit with 12 extrinsic elements, including 6 capacitances, serves as small-signal model and as basis for a large-signal model. ANalysis of such capacitances leads to original equations, employed to form capacitance ratios. BAsic assumptions of existing parameter extractions for 22-element equivalent circuits are perfected: A) Required capacitance ratios are evaluated with device's top-view images. B) Influences of field plates and source air-bridges on these ratios are considered. The large-signal model contains a gate charge's non-quasi-static model and a dispersive-IDS model. THe extrinsic-to-intrinsic voltage transformation needed to calculate non-quasi-static parameters from small-signal parameters is improved with a new description for the measurement's boundary bias points. ALl IDS-model parameters, including time constants of charge-trapping and self-heating, are extracted using pulsed-DC IV and IDS-transient measurements, highlighting the modeling strategy's empirical character.


Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author: Sourabh Khandelwal

Publisher:

Published: 2022

Total Pages: 0

ISBN-13: 9783030777319

DOWNLOAD EBOOK

This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.


Large-Scale Scientific Computing

Large-Scale Scientific Computing

Author: Ivan Lirkov

Publisher: Springer

Published: 2009-03-26

Total Pages: 754

ISBN-13: 3540788271

DOWNLOAD EBOOK

Coverage in this proceedings volume includes robust multilevel and hierarchical preconditioning methods, applications for large scale computations and optimization of coupled engineering problems, and applications of metaheuristics to large-scale problems.


Advancement of Intelligent Computational Methods and Technologies

Advancement of Intelligent Computational Methods and Technologies

Author: O.P. Verma

Publisher: CRC Press

Published: 2024-06-30

Total Pages: 206

ISBN-13: 1040045936

DOWNLOAD EBOOK

The compiled volume originates from the notable contributions presented at the 1st International Conference on Advancementof Intelligent Computational Methods and Technologies (AICMT2023), which took place in a hybrid format on June 27, 2023,at Delhi Technical Campus, Greater Noida, Uttar Pradesh, India. This comprehensive collection serves as an exploration into the dynamic domain of intelligent computational methods and technologies, offering insights into the latest and upcoming trends in computation methods. AICMT2023’s scope encompasses the evolutionary trajectory of computational methods, addressing pertinent issues in real time implementation, delving into the emergence of new intelligent technologies, exploring next-generation problem-solving methodologies, and other interconnected areas. The conference is strategically designed to spotlight current research trendswithin the field, fostering a vibrant research culture and contributing to the collective knowledge base.