Proceedings of the Second Symposium on III-V Nitride Materials and Processes
Author: C. R. Abernathy
Publisher: The Electrochemical Society
Published: 1998
Total Pages: 310
ISBN-13: 9781566771870
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Author: C. R. Abernathy
Publisher: The Electrochemical Society
Published: 1998
Total Pages: 310
ISBN-13: 9781566771870
DOWNLOAD EBOOKAuthor: R. Szweda
Publisher: Elsevier
Published: 2000-07-07
Total Pages: 459
ISBN-13: 0080532306
DOWNLOAD EBOOKThe second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.
Author: T. D. Moustakas
Publisher: The Electrochemical Society
Published: 1999
Total Pages: 246
ISBN-13: 9781566772129
DOWNLOAD EBOOKAuthor: Stephen J. Pearton
Publisher: CRC Press
Published: 2021-10-08
Total Pages: 556
ISBN-13: 1000448428
DOWNLOAD EBOOKPresents views on current developments in heat and mass transfer research related to the modern development of heat exchangers. Devotes special attention to the different modes of heat and mass transfer mechanisms in relation to the new development of heat exchangers design. Dedicates particular attention to the future needs and demands for further development in heat and mass transfer. GaN and related materials are attracting tremendous interest for their applications to high-density optical data storage, blue/green diode lasers and LEDs, high-temperature electronics for high-power microwave applications, electronics for aerospace and automobiles, and stable passivation films for semiconductors. In addition, there is great scientific interest in the nitrides, because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. This series provides a forum for the latest research in this rapidly-changing field, offering readers a basic understanding of new developments in recent research. Series volumes feature a balance between original theoretical and experimental research in basic physics, device physics, novel materials and quantum structures, processing, and systems.
Author:
Publisher:
Published: 1997
Total Pages: 538
ISBN-13:
DOWNLOAD EBOOKAuthor: C. R. Abernathy
Publisher: Materials Research Society
Published: 1997-08-13
Total Pages: 534
ISBN-13: 9781558993723
DOWNLOAD EBOOKThis book from MRS dedicated to III-Nitrides, focuses on developments in AlN, GaN, InN and their alloys that are now finding application in short-wavelength lasers (~400nm, cw at room temperature) and high-power electronics (2.8W/mm at GHz). Experts from fields including crystal growth, condensed matter theory, source chemistry, device processing and device design come together in the volume to address issues of both scientific and technological relevance. And while much of the book reports on advances in material preparation and the understanding of defect issues, similar advances in material and device processing are also reported. Topics include: growth and doping; substrates and substrate effects; characterization; processing and device performance and design.
Author: F. A. Ponce
Publisher:
Published: 1996-09-04
Total Pages: 1008
ISBN-13:
DOWNLOAD EBOOKThis book reflects the excitement in the scientific community about III-V nitrides. Based on papers presented at the First International Symposium on Gallium Nitride and Related Materials (ISGN-1), it reveals the large amount of work that has taken place since the field exploded with the announcement of commercial blue-light-emitting devices. The compound semiconductors in the III-V nitride systems are of increasing interest for high-performance optoelectronic and electronic device applications. These wide-bandgap semiconductor materials are also of great fundamental scientific interest because of their unique structural, electrical and optical properties. From the advances in the technologies for the heteroepitaxial growth of these materials, leading to improved quality and device performance, it is expected that III-V nitrides will soon be of significant practical and commercial interest. Topics include: crystal growth - substrates and early stages; molecular beam growth techniques; chemical vapor phase and alloys and novel growth techniques; structural properties; electronic properties; optical properties; point defects; hydrogen, etching and other materials processes; surfaces and metal contacts and devices.
Author: Stephen J. Pearton
Publisher: CRC Press
Published: 2000-10-31
Total Pages: 724
ISBN-13: 9789056996864
DOWNLOAD EBOOKThe first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microwave electronics, and Er-doping. This unique follow-up features contributions from leading experts that cover the full spectrum of growth.
Author: Charles Blain
Publisher: Nova Publishers
Published: 2002
Total Pages: 214
ISBN-13: 9781590332252
DOWNLOAD EBOOKDevelopments in lasers continue to enable progress in many areas such as eye surgery, the recording industry and dozens of others. This book presents citations from the book literature for the last 25 years and groups them for ease of access which is also provided by subject, author and titles indexes.
Author: T. D. Moustakas
Publisher: The Electrochemical Society
Published: 1996
Total Pages: 250
ISBN-13: 9781566771634
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