Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

Author: R. Szweda

Publisher: Elsevier

Published: 2000-12-05

Total Pages: 429

ISBN-13: 0080532284

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The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.


Gallium Arsenide Technology in Europe

Gallium Arsenide Technology in Europe

Author: Joseph Mun

Publisher: Springer

Published: 1994

Total Pages: 0

ISBN-13: 9783642789342

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Some of the key milestones in GaAs technology were ftrst demonstrated in Europe, for example, the ftrst GaAs Field Effect Transistor (FET) with microwave performance and the ftrst GaAs Microwave Monolithic Integrated Circuit (MMIC). The strategic nature of GaAs technology has attracted heavy investment from many vertically integrated companies in information technology, communication and defence, as well as from semiconductor manufacturers world wide. Europe always faced strong competition from the USA and Japan and until 1984, European GaAs activities were fragmented amongst various players, with some of the activities loosely grouped into national programmes. In 1984, a number of collaborative projects were established under the European Speciftc Programme on Information Technology (ESPRIT) which crossed national boundaries. It has launched a new and exciting phase for GaAs in Europe and few of those involved at the time could have imagined where such collaboration may lead. In the beginning of those early projects, collaboration was approached with caution and suspicion because after all, many members of a newly formed project team were previously competitors. However, common technology problems soon became apparent and the opportunity to discuss these problems with engineers and scientists from different backgrounds had quickly broken down all barriers. Today, collaboration has become an essential element in European R&D. Collaboration has strengthened the GaAs community and helped to accelerate its growth against difftcult times. This book examines the importance of GaAs technology in Europe and illustrates some of the recent activities pursued under various ESPRIT projects.


High-Tech Europe

High-Tech Europe

Author: Wayne Sandholtz

Publisher: Univ of California Press

Published: 2024-07-26

Total Pages: 362

ISBN-13: 0520414551

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Governments have recognized for decades the dynamic role played by microelectronics, computers, and telecommunications in the modern economy. Although Europe's deficiencies in these crucial sectors had long been acknowledged, it was not until the 1980s that European nations began collaborating to develop and promote high-tech industries. Their collaboration gives rise to many questions. Why, for example, did the joint efforts come at such a late date rather than in the 1960s or '70s? And how is it possible to work together in economically sensitive areas? These questions point to fundamental issues in the areas of international cooperation, international institutions, and technology policy. Before the institution of the collaborative programs ESPRIT (European Strategic Programme for Research and Development in Information Technology), RACE (R & D in Advanced Communications-technologies in Europe), and EUREKA (European Research Coordination Agency) in the 1980s, each European country sought its own technological renaissance through protection of national firms behind walls of technical standards, procurement preferences, and research subsidies. This thorough, carefully researched work examines the breakdown of these walls. It will appeal to political scientists, economists, and scholars of technology and Western Europe interested in the political contours of the high-tech landscape. This title is part of UC Press's Voices Revived program, which commemorates University of California Press’s mission to seek out and cultivate the brightest minds and give them voice, reach, and impact. Drawing on a backlist dating to 1893, Voices Revived makes high-quality, peer-reviewed scholarship accessible once again using print-on-demand technology. This title was originally published in 1992.


Properties of Gallium Arsenide

Properties of Gallium Arsenide

Author: M. R. Brozel

Publisher: Inst of Engineering & Technology

Published: 1996

Total Pages: 981

ISBN-13: 9780852968857

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It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.


Applications of Advanced Electromagnetics

Applications of Advanced Electromagnetics

Author: Guennadi A. Kouzaev

Publisher: Springer Science & Business Media

Published: 2012-10-30

Total Pages: 542

ISBN-13: 3642303102

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This text, directed to the microwave engineers and Master and PhD students, is on the use of electromagnetics to the development and design of advanced integrated components distinguished by their extended field of applications. The results of hundreds of authors scattered in numerous journals and conference proceedings are carefully reviewed and classed. Several chapters are to refresh the knowledge of readers in advanced electromagnetics. New techniques are represented by compact electromagnetic–quantum equations which can be used in modeling of microwave-quantum integrated circuits of future In addition, a topological method to the boundary value problem analysis is considered with the results and examples. One extended chapter is for the development and design of integrated components for extended bandwidth applications, and the technology and electromagnetic issues of silicon integrated transmission lines, transitions, filters, power dividers, directional couplers, etc are considered. Novel prospective interconnects based on different physical effects are reviewed as well. The ideas of topology is applicable to the electromagnetic signaling and computing, when the vector field maps can carry discrete information, and this area and the results in topological signaling obtained by different authors are analyzed, including the recently designed predicate logic processor operating spatially represented signal units. The book is rich of practical examples, illustrations, and references and useful for the specialists working at the edge of contemporary technology and electromagnetics.


Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany

Gallium Arsenide and Related Compounds 1993, Proceedings of the 20th INT Symposium, 29 August - 2 September 1993, Freiburg im Braunschweig, Germany

Author: Günter Weimann

Publisher: CRC Press

Published: 1994-01-01

Total Pages: 880

ISBN-13: 9780750302951

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Gallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.