Gallium Arsenide and Related Compounds 1982,
Author: G. E. Stillman
Publisher: CRC Press
Published: 1983-04
Total Pages: 684
ISBN-13:
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Author: G. E. Stillman
Publisher: CRC Press
Published: 1983-04
Total Pages: 684
ISBN-13:
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Publisher:
Published: 1993
Total Pages: 876
ISBN-13:
DOWNLOAD EBOOKAuthor: Gerald B. Stringfellow
Publisher: CRC Press
Published: 2020-11-25
Total Pages: 680
ISBN-13: 100011225X
DOWNLOAD EBOOKGallium Arsenide and Related Compounds 1991emphasizes current results on the materials, characterization, and device aspects of a broad range of semiconductor materials, particularly the III-V compounds and alloys. The book is a valuable reference for researchers in physics, materials science, and electronics and electrical engineering who work on III-V compounds.
Author: Günter Weimann
Publisher: CRC Press
Published: 1994-01-01
Total Pages: 880
ISBN-13: 9780750302951
DOWNLOAD EBOOKGallium Arsenide and Related Compounds 1993 covers III-V compounds from crystal growth of materials to their device applications. Focusing on the fields of optical communications and satellite broadcasting, the book describes the practical applications for GaAs and III-V compounds in devices and circuits, both conventional and those based on quantum effects. It also discusses ultrafast GaAs transistors and integrated circuits, novel laser diodes, and tunneling devices, and considers the direction for future technologies. In addition, this volume addresses the increasing demands of ultra high speed systems that require careful selection of III-V materials to optimize the performance of electronic and optoelectronic components. It is ideal reading for physicists, materials scientists, electrical, and electronics engineers investigating III-V compound materials, properties, and devices.
Author: Ikegami
Publisher: CRC Press
Published: 1993-01-01
Total Pages: 1002
ISBN-13: 9780750302500
DOWNLOAD EBOOKBringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author: V. G. Keramidas
Publisher:
Published: 1983
Total Pages: 314
ISBN-13:
DOWNLOAD EBOOKAuthor: R.J. Malik
Publisher: Elsevier
Published: 2012-12-02
Total Pages: 740
ISBN-13: 0444596356
DOWNLOAD EBOOKThe main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Author: McD. Robinson
Publisher:
Published: 1984
Total Pages: 828
ISBN-13:
DOWNLOAD EBOOKAuthor: Norman G. Einspruch
Publisher: Academic Press
Published: 2014-12-01
Total Pages: 472
ISBN-13: 1483217779
DOWNLOAD EBOOKVLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.
Author: Herbert Kroemer
Publisher: World Scientific
Published: 2008-05-09
Total Pages: 385
ISBN-13: 9814474681
DOWNLOAD EBOOKInformation technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature — something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students.