Fundamental Research on the Numerical Modelling of Semiconductor Devices and Processes
Author: John J. H. Miller
Publisher:
Published: 1987
Total Pages: 144
ISBN-13:
DOWNLOAD EBOOKPosts
Semiconductor Measurement Technology
Author: United States. National Bureau of Standards
Publisher:
Published: 1988
Total Pages: 116
ISBN-13:
DOWNLOAD EBOOKSemiconductor Measurement Technology
Author: National Institute of Standards and Technology (U.S.)
Publisher:
Published: 1990
Total Pages: 140
ISBN-13:
DOWNLOAD EBOOKAnalysis and Simulation of Semiconductor Devices
Author: S. Selberherr
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 308
ISBN-13: 3709187524
DOWNLOAD EBOOKThe invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.
Simulation of Semiconductor Devices and Processes
Author: Heiner Ryssel
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 515
ISBN-13: 3709166195
DOWNLOAD EBOOKSISDEP ’95 provides an international forum for the presentation of state-of-the-art research and development results in the area of numerical process and device simulation. Continuously shrinking device dimensions, the use of new materials, and advanced processing steps in the manufacturing of semiconductor devices require new and improved software. The trend towards increasing complexity in structures and process technology demands advanced models describing all basic effects and sophisticated two and three dimensional tools for almost arbitrarily designed geometries. The book contains the latest results obtained by scientists from more than 20 countries on process simulation and modeling, simulation of process equipment, device modeling and simulation of novel devices, power semiconductors, and sensors, on device simulation and parameter extraction for circuit models, practical application of simulation, numerical methods, and software.
Introduction to Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: World Scientific
Published: 1998
Total Pages: 242
ISBN-13: 9789810236939
DOWNLOAD EBOOKThis book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Physics of Semiconductor Devices
Author: Massimo Rudan
Publisher: Springer
Published: 2014-12-11
Total Pages: 648
ISBN-13: 1493911511
DOWNLOAD EBOOKThis book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters.
