This book reviews the major progress made in the fields of atomic, molecular and optical physics in the last decade. It contains eleven chapters in which contributors have highlighted the major accomplishments made in a given subfield. Each chapter is not a comprehensive review, but rather a succinct survey of the most interesting developments achieved in recent years. This book contains information on many AMO subfields and can be used as a textbook for graduate students interested in entering AMO physics. It may also serve researchers who wish to familiarize themselves with other AMO subfields.
This book is based upon a part of the invited and contributing talks at the 25th International Symposium on Ion-Atom Collisions, ISIAC (biennial), held on July 23-25, 2017 in Palm Cove, Queensland, Australia. To aid the general reader, all the authors tried to present their chapters in the context of the development of the addressed particular themes and the underlying major ideas and intricacies. Some chapters contain new results that have not been previously published elsewhere. Whenever possible, the authors made their attempts to connect the basic research in atomic and molecular collision physics with some important applications in other branches of physics as well as across the physics borders. It is hoped that the material presented in this book will be interesting and useful to the beginners and specialists alike. The contents and expositions are deemed to be helpful to the beginners in assessing the potential overlap of some of the presented material with their own research themes and this might provide motivations for possible further upgrades. Likewise, specialists could take advantage of these reviews to see where the addressed themes were and where they are going, in order to acknowledge the fruits of the efforts made thus far and actively contribute to tailoring the directions of future research. Overall, this book is truly interdisciplinary. It judiciously combines experiments and theories within particle collision physics on atomic and molecular levels. It presents state-of-the-art fundamental research in this field. It addresses the possibilities for significant and versatile applications outside standard atomic and molecular collision physics ranging from astrophysics, surface as well as cluster physics/chemistry, hadron therapy in medicine and to the chemical industry. It is then, as Volume 2, fully in the spirit of the 'Aims and Scope' of this book series by reference to its 'Mission Statement'.
Atomic Multielectron Processes is the first comprehensive collection of the data (mostly cross sections and methods) devoted to the multielectron transitions in atoms and ions induced by single collisions with charged particles and photons. The book covers the fundamental ranges of atomic physics which helps understanding the nature of many particle transitions.
This book is devoted to one of the most active domains of atomic physic- atomic physics of heavy positive ions. During the last 30 years, this terrain has attracted enormous attention from both experimentalists and theoreti cians. On the one hand, this interest is stimulated by rapid progress in the development of laboratory ion sources, storage rings, ion traps and methods for ion cooling. In many laboratories, a considerable number of complex and accurate experiments have been initiated, challenging new frontiers. Highly charged ions are used for investigations related to fundamental research and to more applied fields such as controlled nuclear fusion driven by heavy ions and its diagnostics, ion-surface interaction, physics of hollow atoms, x-ray lasers, x-ray spectroscopy, spectrometry of ions in storage rings and ion traps, biology, and medical therapy. On the other hand, the new technologies have stimulated elaborate theo retical investigations, especially in developing QED theory, relativistic many body techniques, plasma-kinetic modeling based on the Coulomb interactions of highly charged ions with photons and various atomic particles - electrons, atoms, molecules and ions. The idea of assembling this book matured while the editors were writ ing another book, X-Ray Radiation of Highly Charged Ions by H. F. Beyer, H. -J. Kluge and V. P. Shevelko (Springer, Berlin, Heidelberg 1997) covering a broad range of x-ray and other radiative phenomena central to atomic physics with heavy ions.
Comprises a comprehensive reference source that unifies the entire fields of atomic molecular and optical (AMO) physics, assembling the principal ideas, techniques and results of the field. 92 chapters written by about 120 authors present the principal ideas, techniques and results of the field, together with a guide to the primary research literature (carefully edited to ensure a uniform coverage and style, with extensive cross-references). Along with a summary of key ideas, techniques, and results, many chapters offer diagrams of apparatus, graphs, and tables of data. From atomic spectroscopy to applications in comets, one finds contributions from over 100 authors, all leaders in their respective disciplines. Substantially updated and expanded since the original 1996 edition, it now contains several entirely new chapters covering current areas of great research interest that barely existed in 1996, such as Bose-Einstein condensation, quantum information, and cosmological variations of the fundamental constants. A fully-searchable CD- ROM version of the contents accompanies the handbook.
In this book, the latest developments in the study of the dissociative recombination of electrons and molecular ions are discussed. This process is of great importance in controlling the physical and chemical states of ionized gases. It has direct application to astrophysics, aeronomy, thermonuclear fusion research, plasma processing and combustion science.
The emission of electrons from solid surfaces bombarded by slow neutral and ionized heavy particles (atoms, molecules) is reviewed both theoretically and in the light of recent experimental studies by leading groups in the field. The book integrates physics of ion beams, surfaces and chemical physics, and serves both as a reference work for researchers and a textbook for graduate students.
Reviews of Plasma Physics, Volume 23, presents two high quality reviews from the cutting-edge of Russian plasma physics research: "Plasma Models of Atom and Radiative-Collisional Processes", by V.A. Astapenko, L.A. Bureyeva, V.S. Lisitsa, is devoted to a unified description of the atomic core polarization effects in the free-free, free-bound and bound-bound transitions of the charged particles in the field of multielectron atom. "Asymptotic Theory of Charge Exchange And Mobility Processes for Atomic Ions" by B.M. Smirnov reviews the process of resonant charge exchange, and also the transport processes (mobility and diffusion coefficients) for ions in parent gases which are determined by resonant electron transfer.
The book is a comprehensive edition which considers the interactions of atoms, ions and molecules with charged particles, photons and laser fields and reflects the present understanding of atomic processes such as electron capture, target and projectile ionisation, photoabsorption and others occurring in most of laboratory and astrophysical plasma sources including many-photon and many-electron processes. The material consists of selected papers written by leading scientists in various fields.
Ion Implantation and Beam Processing covers the scientific and technological advances in the fields of ion implantation and beam processing. The book discusses the amorphization and crystallization of semiconductors; the application of the Boltzmann transport equation to ion implantation in semiconductors and multilayer targets; and the high energy density collision cascades and spike effects. The text also describes the implantation of insulators (ices and lithographic materials); the ion-bombardment-induced compositions changes in alloys and compounds; and the fundamentals and applications of ion beam and laser mixing. The high-dose implantation and the trends of ion implantation in silicon technology are also considered. The book further tackles the implantation in gaAs technology and the contacts and interconnections on semiconductors. Engineers and people involved in microelectronics will find the book invaluable.
