Flash Lamp Annealing
Flash Lamp Annealing

Author: Lars Rebohle

Publisher: Springer

Published: 2019-07-27

Total Pages: 288

ISBN-13: 3030232999

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This book provides a comprehensive survey of the technology of flash lamp annealing (FLA) for thermal processing of semiconductors. It gives a detailed introduction to the FLA technology and its physical background. Advantages, drawbacks and process issues are addressed in detail and allow the reader to properly plan and perform their own thermal processing. Moreover, this books gives a broad overview of the applications of flash lamp annealing, including a comprehensive literature survey. Several case studies of simulated temperature profiles in real material systems give the reader the necessary insight into the underlying physics and simulations. This book is a valuable reference work for both novice and advanced users.

Ion Beams in Materials Processing and Analysis
Ion Beams in Materials Processing and Analysis

Author: Bernd Schmidt

Publisher: Springer Science & Business Media

Published: 2012-12-13

Total Pages: 425

ISBN-13: 3211993568

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A comprehensive review of ion beam application in modern materials research is provided, including the basics of ion beam physics and technology. The physics of ion-solid interactions for ion implantation, ion beam synthesis, sputtering and nano-patterning is treated in detail. Its applications in materials research, development and analysis, developments of special techniques and interaction mechanisms of ion beams with solid state matter result in the optimization of new material properties, which are discussed thoroughly. Solid-state properties optimization for functional materials such as doped semiconductors and metal layers for nano-electronics, metal alloys, and nano-patterned surfaces is demonstrated. The ion beam is an important tool for both materials processing and analysis. Researchers engaged in solid-state physics and materials research, engineers and technologists in the field of modern functional materials will welcome this text.

Nanoelectronics
Nanoelectronics

Author: Joachim Knoch

Publisher: Walter de Gruyter GmbH & Co KG

Published: 2020-12-07

Total Pages: 475

ISBN-13: 3110575558

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The author presents all aspects, in theory and experiments, of nanoelectronic devices starting from field-effect transistors and leading to alternative device concepts such as Schottky-barrier MOSFETs and band-to-band tunnel FETs. Latest advances in Nanoelectronics, as ultralow power nanoscale devices and the realization of silicon MOS spin qubits, are discussed and finally a brief introduction into device simulations is given as well.

Ion Implantation Technology
Ion Implantation Technology

Author: Edmund G. Seebauer

Publisher: American Institute of Physics

Published: 2008-12-11

Total Pages: 582

ISBN-13: 9780735405974

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The conference is focused on recent advances and emerging technologies in semiconductor processing before, during and after ion implantation. The content encompasses fundamental physical understanding, common and novel applications as well as equipment issues, maintenance and design. The primary audience is process engineers in the microelectronics industry. Additional contributions come from academia and other industry segments (automotive, aerospace, and medical device manufacturing).

Defects in Semiconductors
Defects in Semiconductors

Author:

Publisher: Academic Press

Published: 2015-06-08

Total Pages: 458

ISBN-13: 0128019409

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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. Expert contributors Reviews of the most important recent literature Clear illustrations A broad view, including examination of defects in different semiconductors

Redistribution of Ion Implanted Boron Induced by Pulsed Laser Annealing
Redistribution of Ion Implanted Boron Induced by Pulsed Laser Annealing

Author:

Publisher:

Published: 1976

Total Pages:

ISBN-13:

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Secondary ion mass spectrometry has been used to study changes in the profile of 11B implanted into silicon and subsequently laser annealed using the Q-switched output of a ruby laser. Redistribution of the as-implanted profile is found to be pulse energy density and pulse number dependent. Calculation of the temperature profile shows that the surface region can be melted by the laser pulse, and theoretical profiles obtained by letting the as-implanted boron diffuse in liquid silicon are in good agreement with experimental results.

Ion Implantation and Activation
Ion Implantation and Activation

Author: Kunihiro Suzuki

Publisher: Bentham Science Publishers

Published: 2013-11-05

Total Pages: 171

ISBN-13: 1608057909

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Ion Implantation and Activation presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expressed theoretically as a binary collision, and, experimentally using various mathematical functions. Readers can understand how to establish an ion implantation database by combining theory and experimental data. The models described in this ebook can be directly related to practical experimental data with various approaches: physical, empirical or experimental. Readers can also understand the approximations, and assumptions to reach these models. The redistribution and activation of implanted impurities during subsequent thermal processes are also important subjects and they are described in a broad manner with the combination of theory and experiment, even though many of the models are not well established. Chapters in the book explain, in depth, various topics such as Pearson functions, LSS theory, Monte Carlo simulations, Edgeworth Polynomials and much more. This book provides advanced engineering and physics students and researchers with complete and coherent coverage of modern semiconductor process modeling. Readers can also benefit from this volume by acquiring the necessary information to improve contemporary process models by themselves.