Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three
Porous Silicon: From Formation to Applications: Optoelectronics, Microelectronics, and Energy Technology Applications, Volume Three

Author: Ghenadii Korotcenkov

Publisher: CRC Press

Published: 2016-01-06

Total Pages: 431

ISBN-13: 1482264595

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Porous silicon is rapidly attracting increasing interest from various fields, including optoelectronics, microelectronics, photonics, medicine, sensor and energy technologies, chemistry, and biosensing. This nanostructured and biodegradable material has a range of unique properties that make it ideal for many applications. This book, the third of a

Polycrystalline Silicon for Integrated Circuits and Displays
Polycrystalline Silicon for Integrated Circuits and Displays

Author: Ted Kamins

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 391

ISBN-13: 1461555779

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Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition presents much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon. By properly understanding the properties of polycrystalline silicon and their relation to the deposition conditions, polysilicon can be designed to ensure optimum device and integrated-circuit performance. Polycrystalline silicon has played an important role in integrated-circuit technology for two decades. It was first used in self-aligned, silicon-gate, MOS ICs to reduce capacitance and improve circuit speed. In addition to this dominant use, polysilicon is now also included in virtually all modern bipolar ICs, where it improves the basic physics of device operation. The compatibility of polycrystalline silicon with subsequent high-temperature processing allows its efficient integration into advanced IC processes. This compatibility also permits polysilicon to be used early in the fabrication process for trench isolation and dynamic random-access-memory (DRAM) storage capacitors. In addition to its integrated-circuit applications, polysilicon is becoming vital as the active layer in the channel of thin-film transistors in place of amorphous silicon. When polysilicon thin-film transistors are used in advanced active-matrix displays, the peripheral circuitry can be integrated into the same substrate as the pixel transistors. Recently, polysilicon has been used in the emerging field of microelectromechanical systems (MEMS), especially for microsensors and microactuators. In these devices, the mechanical properties, especially the stress in the polysilicon film, are critical to successful device fabrication. Polycrystalline Silicon for Integrated Circuits and Displays, Second Edition is an invaluable reference for professionals and technicians working with polycrystalline silicon in the integrated circuit and display industries.

Polycrystalline Silicon for Integrated Circuit Applications
Polycrystalline Silicon for Integrated Circuit Applications

Author: Ted Kamins

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 302

ISBN-13: 1461316812

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Recent years have seen silicon integrated circuits enter into an increasing number of technical and consumer applications, until they now affect everyday life, as well as technical areas. Polycrystalline silicon has been an important component of silicon technology for nearly two decades, being used first in MOS integrated circuits and now becoming pervasive in bipolar circuits, as well. During this time a great deal of informa tion has been published about polysilicon. A wide range of deposition conditions has been used to form films exhibiting markedly different properties. Seemingly contradictory results can often be explained by considering the details of the structure formed. This monograph is an attempt to synthesize much of the available knowledge about polysilicon. It represents an effort to interrelate the deposition, properties, and applications of polysilicon so that it can be used most effectively to enhance device and integrated-circuit perfor mance. As device performance improves, however, some of the proper ties of polysilicon are beginning to restrict the overall performance of integrated circuits, and the basic limitations of the properties of polysili con also need to be better understood to minimize potential degradation of circuit behavior.

Electrochemistry of Silicon and Its Oxide
Electrochemistry of Silicon and Its Oxide

Author: Xiaoge Gregory Zhang

Publisher: Springer Science & Business Media

Published: 2007-05-08

Total Pages: 525

ISBN-13: 0306479214

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It may be argued that silicon, carbon, hydrogen, oxygen, and iron are among the most important elements on our planet, because of their involvement in geological, biol- ical, and technological processes and phenomena. All of these elements have been studied exhaustively, and voluminous material is available on their properties. Included in this material are numerous accounts of their electrochemical properties, ranging from reviews to extensive monographs to encyclopedic discourses. This is certainly true for C, H, O, and Fe, but it is true to a much lesser extent for Si, except for the specific topic of semiconductor electrochemistry. Indeed, given the importance of the elect- chemical processing of silicon and the use of silicon in electrochemical devices (e. g. , sensors and photoelectrochemical cells), the lack of a comprehensive account of the electrochemistry of silicon in aqueous solution at the fundamental level is surprising and somewhat troubling. It is troubling in the sense that the non-photoelectrochemistry of silicon seems “to have fallen through the cracks,” with the result that some of the electrochemical properties of this element are not as well known as might be warranted by its importance in a modern technological society. Dr. Zhang’s book, Electrochemical Properties of Silicon and Its Oxide, will go a long way toward addressing this shortcoming. As with his earlier book on the elect- chemistry of zinc, the present book provides a comprehensive account of the elect- chemistry of silicon in aqueous solution.

Surface Science Research
Surface Science Research

Author: Charles P. Norris

Publisher: Nova Publishers

Published: 2005

Total Pages: 214

ISBN-13: 9781594541599

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This new book covers the physics and chemistry of surfaces. The scope includes the structure, thermodynamics, and mobility of clean surfaces, as well as the interaction of gas molecules with solid surfaces. The energetic particle interactions that are the basis for the majority of techniques developed to reveal the structure and chemistry of surfaces are explored including auger electron spectroscopy, photoelectron spectroscopy, inelastic scattering of electrons and ions, low energy electron diffraction, scanning probe microscopy, and interfacial segregation. Crystal nucleation and growth are also considered. Principles such as adsorption, desorption and reactions between adsorbates are examined, with coverage also of new developments in the growth of epitaxial, and Langmuir-Blodgett films, as well as treatment of the etching of surfaces. Modern analytical techniques and applications to thin films and nanostructures are included. The latest in-depth research from around the world is presented.

Ultraclean Surface Processing of Silicon Wafers
Ultraclean Surface Processing of Silicon Wafers

Author: Takeshi Hattori

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 634

ISBN-13: 3662035359

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A totally new concept for clean surface processing of Si wafers is introduced in this book. Some fifty distinguished researchers and engineers from the leading Japanese semiconductor companies, such as NEC, Hitachi, Toshiba, Sony and Panasonic as well as from several universities reveal to us for the first time the secrets of these highly productive institutions. They describe the techniques and equipment necessary for the preparation of clean high-quality semiconductor surfaces as a first step in high-yield/high-quality device production. This book thus opens the door to the manufacturing of reliable nanoscale devices and will be extremely useful for every engineer, physicist and technician involved in the production of silicon semiconductor devices.