Fabrication and Characterization of Antimonide Based Near Infrared Photodetectors
Author: Vinay Bhagwat
Publisher:
Published: 2005
Total Pages: 165
ISBN-13: 9780542106477
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Author: Vinay Bhagwat
Publisher:
Published: 2005
Total Pages: 165
ISBN-13: 9780542106477
DOWNLOAD EBOOKAuthor: Pham Huynh Tram
Publisher:
Published: 2012-03
Total Pages: 0
ISBN-13: 9781621009405
DOWNLOAD EBOOKRecently, there has been increased interest in long wavelength infrared (LWIR) materials because of their applications in civilian and military imaging. Among many on-going research materials, dilute nitride indium antimonide (InSbN) has attracted great attention because of the unique characteristics of dilute nitride III-V compounds, which could complement the ubiquitous mercury cadmium telluride (HgCdTe) material in terms of performance and manufacturing. This book presents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.
Author: Dan Mihai Buca
Publisher:
Published: 2002
Total Pages: 100
ISBN-13:
DOWNLOAD EBOOKAuthor: Pham Huynh Tram
Publisher: Nova Science Publishers
Published: 2014-05-10
Total Pages: 150
ISBN-13: 9781621009726
DOWNLOAD EBOOKPresents the molecular beam epitaxy (MBE) growth and characterisation of InSb and InSbN materials, based on the research work under the Compound Semiconductor and Quantum Information group, Nanyang Technological University, Singapore.
Author: Erick John Michel
Publisher:
Published: 1998
Total Pages:
ISBN-13:
DOWNLOAD EBOOKAuthor: Daniel Y. Zuo
Publisher:
Published: 2011
Total Pages:
ISBN-13:
DOWNLOAD EBOOKThe wide variety of applications for mid- and far-infrared detection has spurred the study of cutting-edge technologies for use in the next genera- tion of detectors in place of the current systems, such as mercury cadmium telluride. While type-II superlattices over a number of advantages in design and material quality, theoretical predictions of their high performance have yet to be realized. This work concentrates on novel designs, fabrication, and characterization of type-II superlattice infrared detectors. In this work we present the first InAs/GaSb type-II superlattice photode- tectors grown on an InAs substrate via metal-organic chemical vapor depo- sition. The design and fabrication of the devices are detailed, along with several characterization processes, including low-temperature electron beam induced current (EBIC) to study structural defects. Through this work, the optical absorption of the undoped substrate was shown to be significantly lower than that of GaSb. The detectors have a cutoff wavelength (50% re- sponsivity) of 9.5 um at 78 K. Their R0A values are on the order of 10^-2 Ohm*cm2. The typical peak responsivity is 1.9 A/W, and the devices have a peak detectivity of 6.8 * 10^9 cm*Hz^1/2 /W at 78 K.
Author:
Publisher:
Published: 2006
Total Pages: 764
ISBN-13:
DOWNLOAD EBOOKAuthor: Nan Guo
Publisher: Springer
Published: 2018-09-27
Total Pages: 61
ISBN-13: 9811328382
DOWNLOAD EBOOKThis book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.
Author: Janet L. Pan
Publisher:
Published: 2000
Total Pages: 147
ISBN-13:
DOWNLOAD EBOOKAuthor: Janet L. Pan
Publisher:
Published: 2000
Total Pages:
ISBN-13:
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