Read and Download eBook Full
Author: Don W. Shaw
Publisher: Cambridge University Press
Published: 2014-06-05
Total Pages: 660
ISBN-13: 9781107410022
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Don W. Shaw
Publisher: Mrs Proceedings
Published: 1990-11-20
Total Pages: 678
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Ikegami
Publisher: CRC Press
Published: 1993-01-01
Total Pages: 1002
ISBN-13: 9780750302500
DOWNLOAD EBOOKBringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.
Author: S. Mahajan
Publisher: Elsevier
Published: 2013-10-22
Total Pages: 607
ISBN-13: 1483286576
DOWNLOAD EBOOKThe development of electronic materials and particularly advances in semiconductor technology have played a central role in the electronics revolution by allowing the production of increasingly cheap and powerful computing equipment and advanced telecommunications devices. This Concise Encyclopedia, which incorporates relevant articles from the acclaimed Encyclopedia of Materials Science and Engineering as well as newly commissioned articles, emphasizes the materials aspects of semiconductors and the technologies important in solid-state electronics. Growth of bulk crystals and epitaxial layers are discussed in the volume and coverage is included of defects and their effects on device behavior. Metallization and passivation issues are also covered. Over 100 alphabetically arranged articles, written by world experts in the field, are each intended to serve as the first source of information on a particular aspect of electronic materials. The volume is extensively illustrated with photographs, diagrams and tables. A bibliography is provided at the end of each article to guide the reader to recent literature. A comprehensive system of cross-references, a three-level subject index and an alphabetical list of articles are included to aid readers in the abstraction of information.
Author: C. K. Maiti
Publisher: IET
Published: 2001
Total Pages: 520
ISBN-13: 9780852967782
DOWNLOAD EBOOKThis book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.
Author: Robin F. C. Farrow
Publisher: Mrs Proceedings
Published: 1991-10-11
Total Pages: 536
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: G. Malcolm Stocks
Publisher: Mrs Proceedings
Published: 1991
Total Pages: 488
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: E. Kasper
Publisher: CRC Press
Published: 2018-05-04
Total Pages: 260
ISBN-13: 1351085069
DOWNLOAD EBOOKThis subject is divided into two volumes. Volume I is on homoepitaxy with the necessary systems, techniques, and models for growth and dopant incorporation. Three chapters on homoepitaxy are followed by two chapters describing the different ways in which MBE may be applied to create insulator/Si stackings which may be used for three-dimensional circuits. The two remaining chapters in Volume I are devoted to device applications. The first three chapters of Volume II treat all aspects of heteroepitaxy with the exception of the epitaxial insulator/Si structures already treated in volume I.
Author: D. L. Anton
Publisher: Mrs Proceedings
Published: 1990-09-27
Total Pages: 472
ISBN-13:
DOWNLOAD EBOOKThe MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author: Kompa, Günter
Publisher: kassel university press GmbH
Published: 2014
Total Pages: 762
ISBN-13: 3862195414
DOWNLOAD EBOOKTrapping effects in III-V devices pose a great challenge to any microwave device modeler. Understanding their physical origins is of prime importance to create physics-related reliable device models. The treatment of trapping phenomena is commonly beyond the classical higher-education level of communication engineers. This book provides any basic material needed to understand trapping effects occurring primarily in GaAs and GaN power HEMT devices. As the text material covers interdisciplinary topics such as crystal defects and localized charges, trap centers and trap dynamics, deep-level transient spectroscopy, and trap centers in passivation layers, the book will be of interest to graduate students of electrical engineering, communication engineering, and physics as well as materials, device, and circuit engineers in research and industry.
