Electron Transport Models for Compound Semiconductor Devices
Author: Huanglin
Publisher:
Published: 1992
Total Pages: 154
ISBN-13:
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Electron Transport in Compound Semiconductors
Author: B.R. Nag
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 476
ISBN-13: 3642814166
DOWNLOAD EBOOKDiscovery of new transport phenomena and invention of electron devices through exploitation of these phenomena have caused a great deal of interest in the properties of compound semiconductors in recent years. Extensive re search has been devoted to the accumulation of experimental results, par ticularly about the artificially synthesised compounds. Significant ad vances have also been made in the improvement of the related theory so that the values of the various transport coefficients may be calculated with suf ficient accuracy by taking into account all the complexities of energy band structure and electron scattering mechanisms. Knowledge about these deve lopments may, however, be gathered only from original research contributions, scattered in scientific journals and conference proceedings. Review articles have been published from time to time, but they deal with one particular material or a particular phenomenon and are written at an advanced level. Available text books on semiconductor physics, do not cover the subject in any detail since many of them were written decades ago. There is, there fore, a definite need for a book, giving a comprehensive account of electron transport in compound semiconductors and covering the introductory material as well as the current work. The present book is an attempt to fill this gap in the literature. The first chapter briefly reviews the history of the developement of compound semiconductors and their applications. It is also an introduction to the contents of the book.
Compound Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 295
ISBN-13: 1447120485
DOWNLOAD EBOOKCompound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Compound Semiconductor Electronics
Author: Michael Shur
Publisher: World Scientific
Published: 1996
Total Pages: 388
ISBN-13: 9789810223250
DOWNLOAD EBOOKIn many respects, compound semiconductor technology has reached the age of maturity when applications will have been defined, yields are high enough and well established, and gallium arsenide and related compounds have carved many important niches in electronics. This book reviews the state-of-the-art of compound semiconductor electronics. It covers the microwave, millimeter wave, and submillimeter wave devices, monolithic microwave and digital integrated circuits made from compound semiconductors and emerging wide band semiconductor materials. The book is written by leading experts in compound semiconductor electronics from industry and academia and strikes the balance between practical applications, record-breaking results, and design and modeling tools specific for compound semiconductor technology. Engineers, scientists, and graduate students working in solid state electronics and especially in the area of compound semiconductor electronics will find this book very useful. It could also be used as a text or a supplementary text for graduate courses in this field.
Electron Transport Phenomena in Semiconductors
Author: B. M. Askerov
Publisher: World Scientific
Published: 1994
Total Pages: 416
ISBN-13: 9789810212834
DOWNLOAD EBOOKThis book contains the first systematic and detailed exposition of the linear theory of the stationary electron transport phenomena in semiconductors. Arbitrary isotropic and anisotropic nonparabolic bands as well as p-Ge-type bands are considered. Phonon drag effect are taken account of in an arbitrary nonquantizing magnetic field. Scattering theory is discussed in detail with account taken of the Bloch wave functions effect. Transport phenomena in the quantizing magnetic field are studied as well as the size effects in thin films. Band structures of the semiconductors and semiconductor compounds of interest are also considered.The main part of the book deals with the three important problems: charge carrier statistics in a semiconductor, classical and quantum theory of the electron transport phenomena. All the theoretical results considered as well as the validity conditions are presented in the form which may be directly used to interpret experimental data.
Balance Equation Approach to Electron Transport In Semiconductors
Author: Xiaolin Lei
Publisher: World Scientific
Published: 2008
Total Pages: 657
ISBN-13: 9812819029
DOWNLOAD EBOOKThis book presents a systematic, comprehensive and up-to-date description of the physical basis of the balance equation transport theory and its applications in bulk and low-dimensional semiconductors. The different aspects of the balance equation method, originally proposed by C S Ting and the author of the present book, were reviewed in the volume entitled Physics of Hot Electron Transport in Semiconductors (edited by C S Ting, World Scientific, 1992). Since then, this method has been extensively developed and applied to various new fields, such as transport in nonparabolic systems, spatially nonuniform systems and semiconductor devices, miniband conduction of superlattices, hot-electron magnetotransport, effects of impact ionization in transport, microwave-induced magnetoresistance oscillation, radiation-driven transport and electron cooling, etc. Due to its simplicity and effectiveness, the balance equation approach has become a useful tool to tackle the many transport phenomena in semiconductors, and provides a reliable basis for developing theories, modeling devices and explaining experiments.The book may be used as a textbook by graduate students. It will also benefit researchers in the field by helping them grasp the basic principles and techniques of the method, without having to spend a lot of time digging out the information from widespread literature covering a period of 30 years.
Compound Semiconductor Device Physics
Author: Sandip Tiwari
Publisher: Academic Press
Published: 2013-10-22
Total Pages: 845
ISBN-13: 148328929X
DOWNLOAD EBOOKThis book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions. One of the most rigorous treatments of compound semiconductor device physics yet published**Essential reading for a complete understanding of modern devices**Includes chapter-ending exercises to facilitate understanding
Advanced Physics of Electron Transport in Semiconductors and Nanostructures
Author: Massimo V. Fischetti
Publisher: Springer
Published: 2016-05-20
Total Pages: 481
ISBN-13: 3319011014
DOWNLOAD EBOOKThis textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
Electron Transport and Device Modeling in the Group-III Nitrides
Author: Brian Edward Foutz
Publisher:
Published: 2000
Total Pages: 306
ISBN-13:
DOWNLOAD EBOOKIntroduction to Semiconductor Device Modelling
Author: Christopher M. Snowden
Publisher: World Scientific
Published: 1998
Total Pages: 242
ISBN-13: 9789810236939
DOWNLOAD EBOOKThis book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
