Two-Dimensional Electron Systems

Two-Dimensional Electron Systems

Author: E.Y. Andrei

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 398

ISBN-13: 9401512868

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Recent studies on two-dimensional systems have led to new insights into the fascinating interplay between physical properties and dimensionality. Many of these ideas have emerged from work on electrons bound to the surface of a weakly polarizable substrate such as liquid helium or solid hydrogen. The research on this subject continues to be at the forefront of modern condensed matter physics because of its fundamental simplicity as well as its connection to technologically useful devices. This book is the first comprehensive overview of experimental and theoretical research in this exciting field. It is intended to provide a coherent introduction for graduate students and non-experts, while at the same time serving as a reference source for active researchers in the field. The chapters are written by individuals who made significant contributions and cover a variety of specialized topics. These include the origin of the surface states, tunneling and magneto-tunneling out of these states, the phase diagram, collective excitations, transport and magneto-transport.


The Physics of the Two-Dimensional Electron Gas

The Physics of the Two-Dimensional Electron Gas

Author: J.T. Devreese

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 444

ISBN-13: 1461319072

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The 1986 Advanced Study Institute on "The Physics of the two-Dimen sional Electron Gas" took place at the Conference Centre liTer Helme", close to Oostende (Belgium), from June 2 till 16, 1986. We were motivated to organize this Advanced Study Institute in view of the recent experimental and theoretical progress in the study of the two-dimensional electron gas. An additional motivation was our own theore tical interest in cyclotron resonance in two-dimensional electron systems at our institute. It is my pleasure to thank several instances and people who made this Advanced Study Institute possible. First of all, the sponsor of the Advanced Study Institute, the NATO Scientific Committee. Furthermore, the co sponsors: Agfa Gevaert, Bell Telephone Mfg. Co. N.V., Burroughs Belgium. Control Data. Digital Equipment Corporation, Esso Belgium. European Research Office (USA). Kredietbank. National Science Foundation (USA). Special thanks are due to the members of the Program Committee and the members of the Organizing Committee. I would also like to thank Mrs. H. Evans for typing assistance.


Electron Scattering in Solid Matter

Electron Scattering in Solid Matter

Author: Jan Zabloudil

Publisher: Springer Science & Business Media

Published: 2005-12-12

Total Pages: 386

ISBN-13: 3540270019

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Addressing graduate students and researchers, this book gives a very detailed theoretical and computational description of multiple scattering in solid matter. Particular emphasis is placed on solids with reduced dimensions, on full potential approaches and on relativistic treatments. For the first time approaches such as the screened Korringa-Kohn-Rostoker method are reviewed, considering all formal steps such as single-site scattering, structure constants and screening transformations, and also the numerical point of view. Furthermore, a very general approach is presented for solving the Poisson equation, needed within density functional theory in order to achieve self-consistency. Special chapters are devoted to the Coherent Potential Approximation and to the Embedded Cluster Method, used, for example, for describing nanostructured matter in real space. In a final chapter, physical properties related to the (single-particle) Green's function, such as magnetic anisotropies, interlayer exchange coupling, electric and magneto-optical transport and spin-waves, serve to illustrate the usefulness of the methods described.


Properties of Gallium Arsenide

Properties of Gallium Arsenide

Author: M. R. Brozel

Publisher: Inst of Engineering & Technology

Published: 1996

Total Pages: 981

ISBN-13: 9780852968857

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It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.


Quantum Wells: Physics And Electronics Of Two-dimensional Systems

Quantum Wells: Physics And Electronics Of Two-dimensional Systems

Author: Alexander Shik

Publisher: World Scientific

Published: 1998-01-09

Total Pages: 106

ISBN-13: 9814496863

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This invaluable book is devoted to the physics, technology and device applications of semiconductor structures with ultrathin layers where the electronic properties are governed by the quantum-mechanical laws. Such structures called quantum wells or structures with the two-dimensional electron gas, have become one of the most actively investigated objects in modern solid state physics. Electronic properties of quantum wells differ dramatically from those of bulk semiconductors, which allows one to observe new types of physical phenomena, such as the quantum Hall effect and many other so-far-unknown kinetic and optical effects. This, in turn, offers wide opportunities for creating semiconductor devices based on new principles, and it has give birth to the new branch of electronics called nanoelectronics.


Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

Spin-orbit Coupling Effects in Two-Dimensional Electron and Hole Systems

Author: Roland Winkler

Publisher: Springer Science & Business Media

Published: 2003-10-10

Total Pages: 244

ISBN-13: 9783540011873

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The first part provides a general introduction to the electronic structure of quasi-two-dimensional systems with a particular focus on group-theoretical methods. The main part of the monograph is devoted to spin-orbit coupling phenomena at zero and nonzero magnetic fields. Throughout the book, the main focus is on a thorough discussion of the physical ideas and a detailed interpretation of the results. Accurate numerical calculations are complemented by simple and transparent analytical models that capture the important physics.


Epitaxy of Semiconductors

Epitaxy of Semiconductors

Author: Udo W. Pohl

Publisher: Springer Science & Business Media

Published: 2013-01-11

Total Pages: 335

ISBN-13: 3642329705

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Introduction to Epitaxy provides the essential information for a comprehensive upper-level graduate course treating the crystalline growth of semiconductor heterostructures. Heteroepitaxy represents the basis of advanced electronic and optoelectronic devices today and is considered one of the top fields in materials research. The book covers the structural and electronic properties of strained epitaxial layers, the thermodynamics and kinetics of layer growth, and the description of the major growth techniques metalorganic vapor phase epitaxy, molecular beam epitaxy and liquid phase epitaxy. Cubic semiconductors, strain relaxation by misfit dislocations, strain and confinement effects on electronic states, surface structures and processes during nucleation and growth are treated in detail. The Introduction to Epitaxy requires only little knowledge on solid-state physics. Students of natural sciences, materials science and electrical engineering as well as their lecturers benefit from elementary introductions to theory and practice of epitaxial growth, supported by pertinent references and over 200 detailed illustrations.


Theory of Transport Properties of Semiconductor Nanostructures

Theory of Transport Properties of Semiconductor Nanostructures

Author: Eckehard Schöll

Publisher: Springer Science & Business Media

Published: 1997-12-31

Total Pages: 418

ISBN-13: 9780412731006

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Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.


Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)

Physics Of Semiconductors, The - Proceedings Of The 22nd International Conference (In 3 Volumes)

Author: David J Lockwood

Publisher: World Scientific

Published: 1995-01-20

Total Pages: 2858

ISBN-13: 9814550159

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These proceedings review the progress in most aspects of semiconductor physics, including those related to materials, processing and devices. The conference continues the tradition of the ICPS series and these volumes include state-of-the-art lectures. The plenary and invited papers address areas of major interest.These volumes will serve as excellent material for researchers in semiconductor physics and related fields.


Handbook of Thin Films, Five-Volume Set

Handbook of Thin Films, Five-Volume Set

Author: Hari Singh Nalwa

Publisher: Academic Press

Published: 2001-10-29

Total Pages: 661

ISBN-13: 0125129084

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This five-volume handbook focuses on processing techniques, characterization methods, and physical properties of thin films (thin layers of insulating, conducting, or semiconductor material). The editor has composed five separate, thematic volumes on thin films of metals, semimetals, glasses, ceramics, alloys, organics, diamonds, graphites, porous materials, noncrystalline solids, supramolecules, polymers, copolymers, biopolymers, composites, blends, activated carbons, intermetallics, chalcogenides, dyes, pigments, nanostructured materials, biomaterials, inorganic/polymer composites, organoceramics, metallocenes, disordered systems, liquid crystals, quasicrystals, and layered structures. Thin films is a field of the utmost importance in today's materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, digital camcorders, sensitive broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are but a few examples of miniaturized device technologies that depend the utilization of thin film materials. The Handbook of Thin Films Materials is a comprehensive reference focusing on processing techniques, characterization methods, and physical properties of these thin film materials.