This book describes new and effective methodologies for modeling, analyzing and mitigating cell-internal signal electromigration in nanoCMOS, with significant circuit lifetime improvements and no impact on performance, area and power. The authors are the first to analyze and propose a solution for the electromigration effects inside logic cells of a circuit. They show in this book that an interconnect inside a cell can fail reducing considerably the circuit lifetime and they demonstrate a methodology to optimize the lifetime of circuits, by placing the output, Vdd and Vss pin of the cells in the less critical regions, where the electromigration effects are reduced. Readers will be enabled to apply this methodology only for the critical cells in the circuit, avoiding impact in the circuit delay, area and performance, thus increasing the lifetime of the circuit without loss in other characteristics.
This book describes methods to address wearout/aging degradations in electronic chips and systems, caused by several physical mechanisms at the device level. The authors introduce a novel technique called accelerated active self-healing, which fixes wearout issues by enabling accelerated recovery. Coverage includes recovery theory, experimental results, implementations and applications, across multiple nodes ranging from planar, FD-SOI to FinFET, based on both foundry provided models and predictive models. Presents novel techniques, tested with experiments on real hardware; Discusses circuit and system level wearout recovery implementations, many of these designs are portable and friendly to the standard design flow; Provides circuit-architecture-system infrastructures that enable the accelerated self-healing for future resilient systems; Discusses wearout issues at both transistor and interconnect level, providing solutions that apply to both; Includes coverage of resilient aspects of emerging applications such as IoT.
This open access book constitutes the refereed post-conference proceedings of the First IFIP International Cross-Domain Conference on Internet of Things, IFIPIoT 2018, held at the 24th IFIP World Computer Congress, WCC 2018, in Poznan, Poland, in September 2018. The 12 full papers presented were carefully reviewed and selected from 24 submissions. Also included in this volume are 4 WCC 2018 plenary contributions, an invited talk and a position paper from the IFIP domain committee on IoT. The papers cover a wide range of topics from a technology to a business perspective and include among others hardware, software and management aspects, process innovation, privacy, power consumption, architecture, applications.
This book evaluates the influence of process variations (e.g. work-function fluctuations) and radiation-induced soft errors in a set of logic cells using FinFET technology, considering the 7nm technological node as a case study. Moreover, for accurate soft error estimation, the authors adopt a radiation event generator tool (MUSCA SEP3), which deals both with layout features and electrical properties of devices. The authors also explore four circuit-level techniques (e.g. transistor reordering, decoupling cells, Schmitt Trigger, and sleep transistor) as alternatives to attenuate the unwanted effects on FinFET logic cells. This book also evaluates the mitigation tendency when different levels of process variation, transistor sizing, and radiation particle characteristics are applied in the design. An overall comparison of all methods addressed by this work is provided allowing to trace a trade-off between the reliability gains and the design penalties of each approach regarding the area, performance, power consumption, single event transient (SET) pulse width, and SET cross-section.
Integrated circuit (IC) reliability is of increasing concern in present-day IC technology where the interconnect failures significantly increases the failure rate for ICs with decreasing interconnect dimension and increasing number of interconnect levels. Electromigration (EM) of interconnects has now become the dominant failure mechanism that determines the circuit reliability. This brief addresses the readers to the necessity of 3D real circuit modelling in order to evaluate the EM of interconnect system in ICs, and how they can create such models for their own applications. A 3-dimensional (3D) electro-thermo-structural model as opposed to the conventional current density based 2-dimensional (2D) models is presented at circuit-layout level.
This book constitutes the refereed post-conference proceedings of the Second IFIP International Cross-Domain Conference on Internet of Things, IFIPIoT 2019, held in Tampa, USA, in October/ November 2019. The 11 full papers presented were carefully reviewed and selected from 22 submissions. Also included in this volume are 8 invited papers. The papers are organized in the following topical sections: IoT applications; context reasoning and situational awareness; IoT security; smart and low power IoT; smart network architectures; and smart system design and IoT education.
This book shows readers how to design semiconductor devices using the most common and lowest cost logic CMOS processes. Readers will benefit from the author’s extensive, industrial experience and the practical approach he describes for designing efficiently semiconductor devices that typically have to be implemented using specialized processes that are expensive, time-consuming, and low-yield. The author presents an integrated picture of semiconductor device physics and manufacturing techniques, as well as numerous practical examples of device designs that are tried and true.
Adiabatic logic is a potential successor for static CMOS circuit design when it comes to ultra-low-power energy consumption. Future development like the evolutionary shrinking of the minimum feature size as well as revolutionary novel transistor concepts will change the gate level savings gained by adiabatic logic. In addition, the impact of worsening degradation effects has to be considered in the design of adiabatic circuits. The impact of the technology trends on the figures of merit of adiabatic logic, energy saving potential and optimum operating frequency, are investigated, as well as degradation related issues. Adiabatic logic benefits from future devices, is not susceptible to Hot Carrier Injection, and shows less impact of Bias Temperature Instability than static CMOS circuits. Major interest also lies on the efficient generation of the applied power-clock signal. This oscillating power supply can be used to save energy in short idle times by disconnecting circuits. An efficient way to generate the power-clock is by means of the synchronous 2N2P LC oscillator, which is also robust with respect to pattern-induced capacitive variations. An easy to implement but powerful power-clock gating supplement is proposed by gating the synchronization signals. Diverse implementations to shut down the system are presented and rated for their applicability and other aspects like energy reduction capability and data retention. Advantageous usage of adiabatic logic requires compact and efficient arithmetic structures. A broad variety of adder structures and a Coordinate Rotation Digital Computer are compared and rated according to energy consumption and area usage, and the resulting energy saving potential against static CMOS proves the ultra-low-power capability of adiabatic logic. In the end, a new circuit topology has to compete with static CMOS also in productivity. On a 130nm test chip, a large scale test vehicle containing an FIR filter was implemented in adiabatic logic, utilizing a standard, library-based design flow, fabricated, measured and compared to simulations of a static CMOS counterpart, with measured saving factors compliant to the values gained by simulation. This leads to the conclusion that adiabatic logic is ready for productive design due to compatibility not only to CMOS technology, but also to electronic design automation (EDA) tools developed for static CMOS system design.
This book was written to arm engineers qualified and knowledgeable in the area of VLSI circuits with the essential knowledge they need to get into this exciting field and to help those already in it achieve a higher level of proficiency. Few people truly understand how a large chip is developed, but an understanding of the whole process is necessary to appreciate the importance of each part of it and to understand the process from concept to silicon. It will teach readers how to become better engineers through a practical approach of diagnosing and attacking real-world problems.
