Electromigration in Thin Films and Electronic Devices
Electromigration in Thin Films and Electronic Devices

Author: Choong-Un Kim

Publisher: Elsevier

Published: 2011-08-28

Total Pages: 353

ISBN-13: 0857093754

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Understanding and limiting electromigration in thin films is essential to the continued development of advanced copper interconnects for integrated circuits. Electromigration in thin films and electronic devices provides an up-to-date review of key topics in this commercially important area.Part one consists of three introductory chapters, covering modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation and x-ray microbeam studies of electromigration. Part two deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure. Finally, part three covers electromigration in solder, with chapters discussing topics such as electromigration-induced microstructural evolution and electromigration in flip-chip solder joints.With its distinguished editor and international team of contributors, Electromigration in thin films and electronic devices is an essential reference for materials scientists and engineers in the microelectronics, packaging and interconnects industries, as well as all those with an academic research interest in the field. - Provides up-to-date coverage of the continued development of advanced copper interconnects for integrated circuits - Comprehensively reviews modelling of electromigration phenomena, modelling electromigration using the peridynamics approach and simulation, and x-ray microbeam studies of electromigration - Deals with electromigration issues in copper interconnects, including x-ray microbeam analysis, voiding, microstructural evolution and electromigration failure

Electronic Thin-Film Reliability
Electronic Thin-Film Reliability

Author: King-Ning Tu

Publisher: Cambridge University Press

Published: 2010-11-25

Total Pages: 413

ISBN-13: 1139492705

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Thin films are widely used in the electronic device industry. As the trend for miniaturization of electronic devices moves into the nanoscale domain, the reliability of thin films becomes an increasing concern. Building on the author's previous book, Electronic Thin Film Science by Tu, Mayer and Feldman, and based on a graduate course at UCLA given by the author, this new book focuses on reliability science and the processing of thin films. Early chapters address fundamental topics in thin film processes and reliability, including deposition, surface energy and atomic diffusion, before moving onto systematically explain irreversible processes in interconnect and packaging technologies. Describing electromigration, thermomigration and stress migration, with a closing chapter dedicated to failure analysis, the reader will come away with a complete theoretical and practical understanding of electronic thin film reliability. Kept mathematically simple, with real-world examples, this book is ideal for graduate students, researchers and practitioners.

Fundamentals of Electromigration-Aware Integrated Circuit Design
Fundamentals of Electromigration-Aware Integrated Circuit Design

Author: Jens Lienig

Publisher: Springer

Published: 2018-02-23

Total Pages: 171

ISBN-13: 3319735586

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The book provides a comprehensive overview of electromigration and its effects on the reliability of electronic circuits. It introduces the physical process of electromigration, which gives the reader the requisite understanding and knowledge for adopting appropriate counter measures. A comprehensive set of options is presented for modifying the present IC design methodology to prevent electromigration. Finally, the authors show how specific effects can be exploited in present and future technologies to reduce electromigration’s negative impact on circuit reliability.

Diffusion Processes in Advanced Technological Materials
Diffusion Processes in Advanced Technological Materials

Author: Devendra Gupta

Publisher: Springer Science & Business Media

Published: 2013-01-15

Total Pages: 552

ISBN-13: 9780080947082

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This new game book for understanding atoms at play aims to document diffusion processes and various other properties operative in advanced technological materials. Diffusion in functional organic chemicals, polymers, granular materials, complex oxides, metallic glasses, and quasi-crystals among other advanced materials is a highly interactive and synergic phenomenon. A large variety of atomic arrangements are possible. Each arrangement affects the performance of these advanced, polycrystalline multiphase materials used in photonics, MEMS, electronics, and other applications of current and developing interest. This book is written by pioneers in industry and academia for engineers, chemists, and physicists in industry and academia at the forefront of today's challenges in nanotechnology, surface science, materials science, and semiconductors.

Metal Based Thin Films for Electronics
Metal Based Thin Films for Electronics

Author: Klaus Wetzig

Publisher: John Wiley & Sons

Published: 2006-03-06

Total Pages: 388

ISBN-13: 3527606475

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This up-to-date handbook covers the main topics of preparation, characterization and properties of complex metal-based layer systems. The authors -- an outstanding group of researchers -- discuss advanced methods for structure, chemical and electronic state characterization with reference to the properties of thin functional layers, such as metallization and barrier layers for microelectronics, magnetoresistive layers for GMR and TMR, sensor and resistance layers. As such, the book addresses materials specialists in industry, especially in microelectronics, as well as scientists, and can also be recommended for advanced studies in materials science, analytics, surface and solid state science.

Physics of Thin Films
Physics of Thin Films

Author: Georg Hass

Publisher: Elsevier

Published: 2013-10-22

Total Pages: 436

ISBN-13: 1483103315

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Physics of Thin Films: Advances in Research and Development, Volume 7 is a collection of papers about film growth and structure, optical properties, and semiconducting films. The book covers topics such as diffraction theory; film support and filter fabrication; aging, usage, and cleaning of filters; and properties and applications of III-V compound films. It also discusses topics such as the preparation of use and unbacked metal filters; electromigration in thin films; and the built-up molecular films and their applications. The text is recommended for physicists and engineers involved in thin film physics, especially those who would like to know more about the progresses in the field.

Electromigration in ULSI Interconnections
Electromigration in ULSI Interconnections

Author: Cher Ming Tan

Publisher: World Scientific

Published: 2010

Total Pages: 312

ISBN-13: 9814273325

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Electromigration in ULSI Interconnections provides a comprehensive description of the electromigration in integrated circuits. It is intended for both beginner and advanced readers on electromigration in ULSI interconnections. It begins with the basic knowledge required for a detailed study on electromigration, and examines the various interconnected systems and their evolution employed in integrated circuit technology. The subsequent chapters provide a detailed description of the physics of electromigration in both Al- and Cu-based Interconnections, in the form of theoretical, experimental and numerical modeling studies. The differences in the electromigration of Al- and Cu-based interconnections and the corresponding underlying physical mechanisms for these differences are explained. The test structures, testing methodology, failure analysis methodology and statistical analysis of the test data for the experimental studies on electromigration are presented in a concise and rigorous manner. Methods of numerical modeling for the interconnect electromigration and their applications to the understanding of electromigration physics are described in detail with the aspects of material properties, interconnection design, and interconnect process parameters on the electromigration performances of interconnects in ULSI further elaborated upon. Finally, the extension of the studies to narrow interconnections is introduced, and future challenges on the study of electromigration are outlined and discussed.

Waste Electrical and Electronic Equipment (WEEE) Handbook
Waste Electrical and Electronic Equipment (WEEE) Handbook

Author: Vannessa Goodship

Publisher: Elsevier

Published: 2012-08-30

Total Pages: 753

ISBN-13: 0857096338

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Electrical and electronic waste is a growing problem as volumes are increasing fast. Rapid product innovation and replacement, especially in information and communication technologies (ICT), combined with the migration from analog to digital technologies and to flat-screen televisions and monitors has resulted in some electronic products quickly reaching the end of their life. The EU directive on waste electrical and electronic equipment (WEEE) aims to minimise WEEE by putting organizational and financial responsibility on producers and distributors for collection, treatment, recycling and recovery of WEEE. Therefore all stakeholders need to be well-informed about their WEEE responsibilities and options. While focussing on the EU, this book draws lessons for policy and practice from all over the world.Part one introduces the reader to legislation and initiatives to manage WEEE. Part two discusses technologies for the refurbishment, treatment and recycling of waste electronics. Part three focuses on electronic products that present particular challenges for recyclers. Part four explores sustainable design of electronics and supply chains. Part five discusses national and regional WEEE management schemes and part six looks at corporate WEEE management strategies.With an authoritative collection of chapters from an international team of authors, Waste electrical and electronic equipment (WEEE) handbook is designed to be used as a reference by policy-makers, producers and treatment operators in both the developed and developing world. - Draws lessons for waste electrical and electronic equipment (WEEE) policy and practice from around the world - Discusses legislation and initiatives to manage WEEE, including global e-waste initiatives, EU legislation relating to electronic waste, and eco-efficiency evaluation of WEEE take-back systems - Sections cover technologies for refurbishment, treatment and recycling of waste, sustainable design of electronics and supply chains, national and regional waste management schemes, and corporate WEEE management strategies

Reliability and Failure of Electronic Materials and Devices
Reliability and Failure of Electronic Materials and Devices

Author: Milton Ohring

Publisher: Academic Press

Published: 2014-10-14

Total Pages: 759

ISBN-13: 0080575528

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Reliability and Failure of Electronic Materials and Devices is a well-established and well-regarded reference work offering unique, single-source coverage of most major topics related to the performance and failure of materials used in electronic devices and electronics packaging. With a focus on statistically predicting failure and product yields, this book can help the design engineer, manufacturing engineer, and quality control engineer all better understand the common mechanisms that lead to electronics materials failures, including dielectric breakdown, hot-electron effects, and radiation damage. This new edition adds cutting-edge knowledge gained both in research labs and on the manufacturing floor, with new sections on plastics and other new packaging materials, new testing procedures, and new coverage of MEMS devices. Covers all major types of electronics materials degradation and their causes, including dielectric breakdown, hot-electron effects, electrostatic discharge, corrosion, and failure of contacts and solder joints New updated sections on "failure physics," on mass transport-induced failure in copper and low-k dielectrics, and on reliability of lead-free/reduced-lead solder connections New chapter on testing procedures, sample handling and sample selection, and experimental design Coverage of new packaging materials, including plastics and composites

Influence of Temperature on Microelectronics and System Reliability
Influence of Temperature on Microelectronics and System Reliability

Author: Pradeep Lall

Publisher: CRC Press

Published: 2020-07-09

Total Pages: 332

ISBN-13: 0429605595

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This book raises the level of understanding of thermal design criteria. It provides the design team with sufficient knowledge to help them evaluate device architecture trade-offs and the effects of operating temperatures. The author provides readers a sound scientific basis for system operation at realistic steady state temperatures without reliability penalties. Higher temperature performance than is commonly recommended is shown to be cost effective in production for life cycle costs. The microelectronic package considered in the book is assumed to consist of a semiconductor device with first-level interconnects that may be wirebonds, flip-chip, or tape automated bonds; die attach; substrate; substrate attach; case; lid; lid seal; and lead seal. The temperature effects on electrical parameters of both bipolar and MOSFET devices are discussed, and models quantifying the temperature effects on package elements are identified. Temperature-related models have been used to derive derating criteria for determining the maximum and minimum allowable temperature stresses for a given microelectronic package architecture. The first chapter outlines problems with some of the current modeling strategies. The next two chapters present microelectronic device failure mechanisms in terms of their dependence on steady state temperature, temperature cycle, temperature gradient, and rate of change of temperature at the chip and package level. Physics-of-failure based models used to characterize these failure mechanisms are identified and the variabilities in temperature dependence of each of the failure mechanisms are characterized. Chapters 4 and 5 describe the effects of temperature on the performance characteristics of MOS and bipolar devices. Chapter 6 discusses using high-temperature stress screens, including burn-in, for high-reliability applications. The burn-in conditions used by some manufacturers are examined and a physics-of-failure approach is described. The