Electrical, Optical and Structural Properties of Indium Tin Oxide Thin Films Deposited on Glass, Pet and Polycarbonate Substrates by Rf Sputtering
Author: Teck-Shiun Lim
Publisher:
Published: 199?
Total Pages: 140
ISBN-13:
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Author: Teck-Shiun Lim
Publisher:
Published: 199?
Total Pages: 140
ISBN-13:
DOWNLOAD EBOOKAuthor: Nickolas R. Greenland
Publisher:
Published: 2001
Total Pages: 118
ISBN-13:
DOWNLOAD EBOOKAuthor: Dr. B. Radhakrishna
Publisher: Lulu.com
Published:
Total Pages: 132
ISBN-13: 0359510280
DOWNLOAD EBOOKAuthor: Öcal Tuna
Publisher: LAP Lambert Academic Publishing
Published: 2010-05
Total Pages: 100
ISBN-13: 9783838365695
DOWNLOAD EBOOKIn this study Indium Tin Oxide (ITO) thin films were grown by both DC and RF magnetron sputtering techniques. To know deposition rate of ITO, system was calibrated for both DCMS and RFMS and then ITO were grown on glass substrate with the thickness of 70 nm and 40 nm by changing substrate temperature. The effect of substrate temperature, film thickness and sputtering method on structural, electrical and optical properties were investigated. The results show that substrate temperature and film thickness substantially affects the film properties, especially crystallization and resistivity. The thin films grown at the lower than 150 oC showed amorphous structure. However, crystallization was detected with the furtherincrease of substrate temperature. Band gap of ITO was calculated to be about 3.64eV at the substrate temperature of 150 oC, and itwidened with substrate temperature increment. From electrical measurements the resistivity at room temperature was obtained 1.28x10-4 and 1.29x10-4 D-cm, for DC and RF sputtered films, respectively. We also measured temperature dependence resistivity and the Hall coefficient of the films, and we calculated carrier concentration and Hall mobility."
Author: Rongxin Wang
Publisher: Open Dissertation Press
Published: 2017-01-26
Total Pages:
ISBN-13: 9781361207796
DOWNLOAD EBOOKThis dissertation, "Preparation and Post-annealing Effects on the Optical Properties of Indium Tin Oxide Thin Films" by Rongxin, Wang, 王榮新, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled PREPARATION AND POST-ANNEALING EFFECTS ON THE OPTICAL PROPERTIES OF INDIUM TIN OXIDE THIN FILMS Submitted by WANG Rong Xin for the degree of Doctor of Philosophy at The University of Hong Kong in April 2005 Many opto-electronic devices, such as III-V compound devices, liquid crystal displays, solar cells, organic and inorganic light emitting devices, and ultraviolet photodetectors, demand transparent electrode materials simultaneously having high electrical conductance. To meet the requirements for particular applications, a great deal of basic research and studies have been carried out on the electrical and optical properties of these materials. As a most promising candidate for such materials, indium tin oxide (ITO) has attracted interest in recent years. Furthermore, ITO has many unique properties such as excellent adhesion on the substrate, thermal stability and ease of patterning. The deposition of high-quality ITO thin films is a key step for successful application of ITO thin films as transparent electrode materials. To obtain optimal electrical and optical properties of ITO films, the growth parameters and conditions must be determined. Moreover, the optical and electrical properties of ITO contact layers, which can either be on the top side or the bottom side of a device, are influenced by various post-deposition treatments. For the present work, ITO thin films were deposited on glass and quartz substrates using e-beam evaporation with different deposition rates. The influence of substrate material, deposition rate, deposition gas environment and post-deposition annealing on the optical properties of the films was investigated in detail. Atomic force microscopy, X-ray diffraction and X-ray photoemission spectroscopy was employed to obtain information on the chemical state and crystallization of the films. Analysis of these data suggests that the substrate material, deposition rate, deposition gas environment and post-deposition annealing conditions strongly affect the chemical composition and the microstructure of the ITO films and these in turn influence the optical properties of the film. Oxygen incorporation transfers the In O phase to the In O phase and removes metallic In to form both indium oxide 2 3-x 2 3 phases. Both of these reactions are beneficial for the optical transmittance of ITO thin films. Moreover, it was found that the incorporation and decomposition reactions of oxygen can be controlled so as to change the optical properties of the ITO thin films reversibly. DOI: 10.5353/th_b3154617 Subjects: Thin films - Optical properties Indium compounds Annealing of metals
Author: Mohammad Javed Akhter Khan
Publisher:
Published: 1997
Total Pages: 108
ISBN-13:
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Published: 2004
Total Pages: 1360
ISBN-13:
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Publisher:
Published: 1976
Total Pages: 70
ISBN-13:
DOWNLOAD EBOOKDuring the last few years, sputtering has become a very important industrial technique for depositing thin films. Typical applications include metalization and passivation in the electronics industry, the deposition of complex cermets, glasses, and plastics, and the formation of coatings for corrosion, abrasion, and wear resistance. However, relatively little work has been reported on the growth of compound semiconducting films by sputtering.
Author: Mohamad Helmi Abd. Mubin
Publisher:
Published: 2014
Total Pages: 63
ISBN-13:
DOWNLOAD EBOOKAuthor: Meizhen Gao
Publisher:
Published: 2007
Total Pages: 119
ISBN-13:
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