C, H, N and O in Si and Characterization and Simulation of Materials and Processes
C, H, N and O in Si and Characterization and Simulation of Materials and Processes

Author: A. Borghesi

Publisher: Newnes

Published: 2012-12-02

Total Pages: 580

ISBN-13: 044459633X

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Containing over 200 papers, this volume contains the proceedings of two symposia in the E-MRS series. Part I presents a state of the art review of the topic - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. There was strong representation from the industrial laboratories, illustrating that the topic is highly relevant for the semiconductor industry. The second part of the volume deals with a topic which is undergoing a process of convergence with two concerns that are more particularly application oriented. Firstly, the advanced instrumentation which, through the use of atomic force and tunnel microscopies, high resolution electron microscopy and other high precision analysis instruments, now allows for direct access to atomic mechanisms. Secondly, the technological development which in all areas of applications, particularly in the field of microelectronics and microsystems, requires as a result of the miniaturisation race, a precise mastery of the microscopic mechanisms.

Silicon, Germanium, and Their Alloys
Silicon, Germanium, and Their Alloys

Author: Gudrun Kissinger

Publisher: CRC Press

Published: 2014-12-09

Total Pages: 424

ISBN-13: 1466586656

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Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic

Properties of Silicon Germanium and SiGe:Carbon
Properties of Silicon Germanium and SiGe:Carbon

Author: Erich Kasper

Publisher: Inst of Engineering & Technology

Published: 2000

Total Pages: 358

ISBN-13: 9780852967836

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The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.

The Chemistry of Germanium
The Chemistry of Germanium

Author: E. G. Rochow

Publisher: Elsevier

Published: 2014-05-18

Total Pages: 163

ISBN-13: 1483187586

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Pergamon Texts in Inorganic Chemistry, Volume 14: The Chemistry of Germanium, Tin, and Lead focuses on the properties, characteristics, transformations, and reactions of lead, germanium, and tin. The book focuses on germanium and compounds of Ge(I) and Ge(II). Discussions focus on germanium(II) compounds of phosphorus and arsenic, germanium(II) imide and nitride, monohalides, analytical determination, biological activity, chemical behavior of germanium, and production and industrial use of germanium. The text then elaborates on organogermanium compounds, complexes of germanium(IV), and tin. Topics include nuclear magnetic resonance, chemical properties of tin metal, isotopes of tin, occurrence and distribution of tin, and fluorogermanates and chlorogermanates. The manuscript takes a look at nuclear magnetic resonance, extraction, industrial and commercial utilization, toxicity, and chemical properties of metallic lead. The publication is a vital source of data for researchers interested in the chemistry of lead, germanium, and tin.

Properties of Silicon Germanium and SiGe
Properties of Silicon Germanium and SiGe

Author: Erich Kasper

Publisher: Inst of Engineering & Technology

Published: 1999-12

Total Pages: 372

ISBN-13: 9780863415579

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The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC, with over 20 companies planning manufacture in the near future. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distils in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe: C, self-assembled nanostructures, quantum effects and device trends. The book contains 75% more text than Prof. Kasper's earlier book Properties of strained and relaxed SiGe (INSPEC, IEE, 1995), thoroughly updates its content and adds many new topics.

Physical Chemistry of Semiconductor Materials and Processes
Physical Chemistry of Semiconductor Materials and Processes

Author:

Publisher: John Wiley & Sons

Published: 2015-10-12

Total Pages: 420

ISBN-13: 1118514572

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The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Metal Impurities in Silicon- and Germanium-Based Technologies
Metal Impurities in Silicon- and Germanium-Based Technologies

Author: Cor Claeys

Publisher: Springer

Published: 2018-08-13

Total Pages: 464

ISBN-13: 3319939254

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This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.