Strained Silicon Heterostructures
Strained Silicon Heterostructures

Author: C. K. Maiti

Publisher: IET

Published: 2001

Total Pages: 520

ISBN-13: 9780852967782

DOWNLOAD EBOOK

This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Electrical Characterization of Silicon-on-Insulator Materials and Devices
Electrical Characterization of Silicon-on-Insulator Materials and Devices

Author: Sorin Cristoloveanu

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 389

ISBN-13: 1461522455

DOWNLOAD EBOOK

Silicon on Insulator is more than a technology, more than a job, and more than a venture in microelectronics; it is something different and refreshing in device physics. This book recalls the activity and enthu siasm of our SOl groups. Many contributing students have since then disappeared from the SOl horizon. Some of them believed that SOl was the great love of their scientific lives; others just considered SOl as a fantastic LEGO game for adults. We thank them all for kindly letting us imagine that we were guiding them. This book was very necessary to many people. SOl engineers will certainly be happy: indeed, if the performance of their SOl components is not always outstanding, they can now safely incriminate the relations given in the book rather than their process. Martine, Gunter, and Y. S. Chang can contemplate at last the amount of work they did with the figures. Our SOl accomplices already know how much we borrowed from their expertise and would find it indecent to have their detailed contri butions listed. Jean-Pierre and Dimitris incited the book, while sharing their experience in the reliability of floating bodies. Our families and friends now realize the SOl capability of dielectrically isolating us for about two years in a BOX. Our kids encouraged us to start writing. Our wives definitely gave us the courage to stop writing. They had a hard time fighting the symptoms of a rapidly developing SOl allergy.

Challenges of Characterizing the Impact of Mechanical Strain on the Electrical Properties of Silicon and III-V Semiconductor Devices
Challenges of Characterizing the Impact of Mechanical Strain on the Electrical Properties of Silicon and III-V Semiconductor Devices

Author: Shreyasee Dey

Publisher:

Published: 2008

Total Pages: 118

ISBN-13:

DOWNLOAD EBOOK

The electrical characteristics of silicon and III-V semiconductors are known to be modified when subjected to mechanical strain. In this work, a four point wafer bending tool is setup to induce mechanical strain in silicon and III-V to study the effect of strain on their electrical performance. The bending tool is initially benchmarked using Si MOSFETs subjected to mechanical strain in order to establish the strain characterization methodology. The effect of strain on performance of Si MOSFETs is modeled for various process conditions and compared with experimental results obtained using the bending tool setup. MOS capacitors on GaAs and Si wafers are also theoretically modeled and experimentally compared to understand the impact of mechanical strain on capacitance measurements.

Strained-Si Heterostructure Field Effect Devices
Strained-Si Heterostructure Field Effect Devices

Author: C.K Maiti

Publisher: CRC Press

Published: 2007-01-11

Total Pages: 438

ISBN-13: 1420012347

DOWNLOAD EBOOK

A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Strain Effect in Semiconductors
Strain Effect in Semiconductors

Author: Yongke Sun

Publisher: Springer Science & Business Media

Published: 2009-11-14

Total Pages: 353

ISBN-13: 1441905529

DOWNLOAD EBOOK

Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

DOWNLOAD EBOOK

This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Applications of Silicon-Germanium Heterostructure Devices
Applications of Silicon-Germanium Heterostructure Devices

Author: C.K Maiti

Publisher: CRC Press

Published: 2001-07-20

Total Pages: 402

ISBN-13: 1420034693

DOWNLOAD EBOOK

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st