Effect of Static Electric Fields on The Electronic And Optical Properties of Layered Semiconductor Nanostructures

Effect of Static Electric Fields on The Electronic And Optical Properties of Layered Semiconductor Nanostructures

Author: Volodya A. Harutyunyan

Publisher: Bentham Science Publishers

Published: 2015-11-04

Total Pages: 252

ISBN-13: 168108080X

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This volume investigates the theory of the effect of static electric fields on one-electron states in. nanocylindrical and nanospherical heterolayers and quantized semiconductor films. Homogeneous external electrostatic field for all these structures has been considered as a "universal" modulating factor. For structures with radial symmetry, a study on the influence of radial static field and the electric field of a charged ring on one-electron states is presented. Chapters focusing on homogeneous field effect on low-dimensional excitonic states in the quantized films and quantum wires - in both wide bandgap and narrowband semiconductors - are also included. Other contents include calculations weak, moderate and strong electric fields, quantum-mechanical approximation and perturbation theory, the quasi-classical approximation (WKB method). Readers will benefit from the varied methodological to the subject which gives them a concrete analytical framework to solve problems related to nanoscale semiconductor design. The reference should prove to be useful to academics and professionals working in semiconductor nanoelectronics research and development.


Optics and Its Applications

Optics and Its Applications

Author: David Blaschke

Publisher: Springer Nature

Published: 2022-10-05

Total Pages: 225

ISBN-13: 3031112873

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This book features selected articles based on contributions presented at the 9th International Symposium on Optics and Its Applications (OPTICS-2022) in Yerevan-Ashtarak, Armenia. The annual OPTICS symposium brings together renowned experts from all over the world working in the fields of atomic optics, plasmonics, optics of nanostructures, as well as the optics of condensed matter, and provides a perfect setting for their discussions of the most recent developments in this area. The 9th iteration in this series, dedicated to the 80th birthday of Academician Eduard Kazaryan, focuses on topics dealing with the spectroscopy of real and artificial atoms, linear and nonlinear optical characteristics of quantum wells, and two-dimensional materials. The book highlights recent results of few-particle optical characteristics of artificial atoms in the framework of the exactly solvable Moshinsky model, as well as an electro-optical analog of the magneto-optical Faraday effect. In addition, a detailed study of the nucleation process, its characterization, as well as electronic and optical properties of graded composition quantum dots in the Stranski−Krastanov growth mode, is presented.


Optical Properties of Semiconductor Nanostructures

Optical Properties of Semiconductor Nanostructures

Author: Marcin L. Sadowski

Publisher: Springer Science & Business Media

Published: 2000-06-30

Total Pages: 470

ISBN-13: 9780792363163

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Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.


Polarization Effects in Semiconductors

Polarization Effects in Semiconductors

Author: Debdeep Jena

Publisher: Springer Science & Business Media

Published: 2008

Total Pages: 523

ISBN-13: 0387368310

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Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.


ULSI Process Integration 5

ULSI Process Integration 5

Author: Cor L. Claeys

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 509

ISBN-13: 1566775728

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The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.


Optical Properties Of Graphene

Optical Properties Of Graphene

Author: Rolf Binder

Publisher: World Scientific

Published: 2016-11-11

Total Pages: 517

ISBN-13: 9813148764

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This book provides a comprehensive state-of-the-art overview of the optical properties of graphene. During the past decade, graphene, the most ideal and thinnest of all two-dimensional materials, has become one of the most widely studied materials. Its unique properties hold great promise to revolutionize many electronic, optical and opto-electronic devices. The book contains an introductory tutorial and 13 chapters written by experts in areas ranging from fundamental quantum mechanical properties to opto-electronic device applications of graphene.