Simulation of Semiconductor Processes and Devices 2001
Simulation of Semiconductor Processes and Devices 2001

Author: Dimitris Tsoukalas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 463

ISBN-13: 3709162440

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This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.

Power Electronics Device Applications of Diamond Semiconductors
Power Electronics Device Applications of Diamond Semiconductors

Author: Satoshi Koizumi

Publisher: Woodhead Publishing

Published: 2018-06-29

Total Pages: 468

ISBN-13: 0081021844

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Power Electronics Device Applications of Diamond Semiconductors presents state-of-the-art research on diamond growth, doping, device processing, theoretical modeling and device performance. The book begins with a comprehensive and close examination of diamond crystal growth from the vapor phase for epitaxial diamond and wafer preparation. It looks at single crystal vapor deposition (CVD) growth sectors and defect control, ultra high purity SC-CVD, SC diamond wafer CVD, heteroepitaxy on Ir/MqO and needle-induced large area growth, also discussing the latest doping and semiconductor characterization methods, fundamental material properties and device physics. The book concludes with a discussion of circuits and applications, featuring the switching behavior of diamond devices and applications, high frequency and high temperature operation, and potential applications of diamond semiconductors for high voltage devices. - Includes contributions from today's most respected researchers who present the latest results for diamond growth, doping, device fabrication, theoretical modeling and device performance - Examines why diamond semiconductors could lead to superior power electronics - Discusses the main challenges to device realization and the best opportunities for the next generation of power electronics

Defects in Semiconductors
Defects in Semiconductors

Author:

Publisher: Academic Press

Published: 2015-06-08

Total Pages: 458

ISBN-13: 0128019409

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This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors

Kinetic Processes
Kinetic Processes

Author: Kenneth A. Jackson

Publisher: John Wiley & Sons

Published: 2006-03-06

Total Pages: 424

ISBN-13: 3527604952

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The formation of solids is governed by kinetic processes, which are closely related to the macroscopic behaviour of the resulting materials. With the main focus on ease of understanding, the author begins with the basic processes at the atomic level to illustrate their connections to material properties. Diffusion processes during crystal growth and phase transformations are examined in detail. Since the underlying mathematics are very complex, approximation methods typically used in practice are the prime choice of approach. Apart from metals and alloys, the book places special emphasis on the growth of thin films and bulk crystals, which are the two main pillars of modern device and semiconductor technology. All the presented phenomena are tied back to the basic thermodynamic properties of the materials and to the underlying physical processes for clarity.

Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits
Technology Computer Aided Design for Si, SiGe and GaAs Integrated Circuits

Author: G.A. Armstrong

Publisher: IET

Published: 2007-11-30

Total Pages: 457

ISBN-13: 0863417434

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The first book to deal with a broad spectrum of process and device design, and modeling issues related to semiconductor devices, bridging the gap between device modelling and process design using TCAD. Presents a comprehensive perspective of emerging fields and covers topics ranging from materials to fabrication, devices, modelling and applications. Aimed at research-and-development engineers and scientists involved in microelectronics technology and device design via Technology CAD, and TCAD engineers and developers.

Silicon Carbide
Silicon Carbide

Author: Peter Friedrichs

Publisher: John Wiley & Sons

Published: 2011-04-08

Total Pages: 528

ISBN-13: 3527629068

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This book prestigiously covers our current understanding of SiC as a semiconductor material in electronics. Its physical properties make it more promising for high-powered devices than silicon. The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.

Defects in Microelectronic Materials and Devices
Defects in Microelectronic Materials and Devices

Author: Daniel M. Fleetwood

Publisher: CRC Press

Published: 2008-11-19

Total Pages: 772

ISBN-13: 1420043773

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Uncover the Defects that Compromise Performance and ReliabilityAs microelectronics features and devices become smaller and more complex, it is critical that engineers and technologists completely understand how components can be damaged during the increasingly complicated fabrication processes required to produce them.A comprehensive survey of defe